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1.
《Mendeleev Communications》2022,32(5):597-600
Calorimetric monitoring of the autoclave reaction N2O4 + C2H4 at –85 to +10 °C under argon pressure 10–30 bar revealed that the exothermic chemical reaction started at temperatures above –52 °C at 10 bar, whereas an intensive exothermic reaction started at –85 °C and pressure of 30 bar. IR study showed that oligo/polynitroethylene was formed at 30 bar, while carbonyl and hydroxy compound as well as nitrate R–ONO2 formation occurred upon processing at 10 bar. 相似文献
2.
当煤层上方为坚硬顶板时,在工作面回采期间容易出现大面积悬顶,导致巷旁充填体出现大变形破坏,极大威胁采煤安全.为解决这一问题,以某矿1205工作面沿空留巷为工程背景,分析了爆炸围岩裂隙范围和坚硬顶板破断特征,建立了切顶卸压围岩结构力学模型,研究表明,相邻炮孔爆炸后,炮孔间裂隙互相贯穿,降低了顶板强度,同时当切顶角为15°时,巷道稳定性较好.工程实践结果表明:采用爆破切顶技术后,顶板下沉量减小了62.3%,较好地保证了围岩稳定性. 相似文献
3.
Tetsuo Irifune Chiaki Ueda Shohei Ohshita Hiroaki Ohfuji Takehiro Kunimoto Toru Shinmei 《高压研究》2020,40(1):96-106
ABSTRACTNano-polycrystalline diamond (NPD) with various grain sizes has been synthesized from glassy carbon at pressures 15–25?GPa and temperatures 1700–2300°C using multianvil apparatus. The minimum temperature for the synthesis of pure NPD, below which a small amount of compressed graphite was formed, significantly increased with pressure from ~1700°C at 15?GPa to ~1900°C at 25?GPa. The NPD having grain sizes less than ~50?nm was synthesized at temperatures below ~2000°C at 15?GPa and ~2300°C at 25?GPa, above which significant grain growth was observed. The grain size of NPD decreases with increasing pressure and decreasing temperature, and the pure NPD with grain sizes less than 10?nm is obtained in a limited temperature range around 1800–2000°C, depending on pressure. The pure NPD from glassy carbon is highly transparent and exhibits a granular nano-texture, whose grain size is tunable by selecting adequate pressure and temperature conditions. 相似文献
4.
阐明了引入溶剂渗透因子的必要性,较详细地介绍了两种渗透因子及它们间的关系。 相似文献
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针对VO2薄膜在微测辐射热计上的应用,采用射频反应溅射法,在室温下制备氧化钒薄膜;研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压,先获得成分接近VO2的非晶化薄膜,再在400℃空气中氧化退火,便可制得高电阻温度系数,低电阻率的VO2薄膜,电阻温度系数约为-4%/℃,薄膜方块电阻为R□为100—300kΩ;薄膜在室温下沉积,400℃下退火的制备方法与微机电加工(micro electromechanic
关键词:
二氧化钒
电阻温度系数
氧分压
射频反应溅射法 相似文献
8.
Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid 下载免费PDF全文
This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins (1963) and Dean (1979) in the study of random surface waves and by Song (2004) in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts: the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song (2004) for second-order random wave solutions for internal waves in a two-layer fluid as a particular case. 相似文献
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10.
S. Meenakshi B.K. Godwal I. Orgzall S. Tkachev 《Journal of Physics and Chemistry of Solids》2006,67(8):1660-1667
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes. 相似文献