Effect of local atomic disorder on the half-metallicity of full-Heusler Co2FeSi alloy: a first-principles study

This paper investigates the effect of atomic disorder on the electronic structure, magnetism, and half-metallicity of full-Heusler Co2FeSi alloy by using the full-potential linearized augmented plane wave method within the generalized gradient approximation (GGA) and GGA+U schemes. It considers three types of atomic disorders in Co2FeSi alloy: the Co-Fe, Co-Si, and Fe-Si disorders. Total energy calculations show that of the three types of disorders, the Fe-Si disorder is more likely to occur. It finds that for the Co-Si disorder, additional states appear in the minority band-gap at the EF and the half-metallcity is substantially destroyed, regardless of the disorder level. On the other hand, the Co-Fe and Fe-Si disorders have little effect on the half-metallicity at a low disorder level. When increasing the disorder levels, the half-metallcity is destroyed at about 9 % of the Co-Fe disorder level, while that stays at 25 % of the Fe-Si disorder level.     

LiMgPbSb型四元Heusler合金CoFeTiSb的半金属性及其无序效应

基于密度泛函理论的GGA计算,我们研究了LiMgPbSb型Heusler合金CoFeTiSb电子结构,发现CoFeTiSb在费米面处存在100%的自旋极化率,并且具有2μB的原胞总磁矩.此外,我们考虑了Co-Fe、Co-Ti和Fe-Ti交换无序对CoFeTiSb合金电子结构的影响,发现这三种交换无序均使得CoFeTiSb完全丧失了半金属性,在Co-Fe交换无序下,CoFeTiSb合金具有85%的自旋极化率,而在Co-Ti无序下,CoFeTiSb合金的自旋极化率只有5%.     

Computational study on the half-metallicity in transition metal–oxide-incorporated 2D g-C3N4 nanosheets

In this study, based on the first-principles calculations, we systematically investigated the electronic and magnetic properties of the transition metal–oxide-incorporated 2D g-C₃N₄ nanosheet (labeled C₃N₄– TM–O, TM= Sc–Mn). The results suggest that the TM–O binds to g-C₃N₄ nanosheets strongly for all systems. We found that the 2D C₃N₄–TM–O framework is ferromagnetic for TM= Sc, Ti, V, Cr, while it is antiferromagnetic for TM= Mn. All the ferromagnetic systems exhibit the half-metallic property. Furthermore, Monte Carlo simulations based on the Heisenberg model suggest that the Curie temperatures (T_c) of the C₃N₄–TM–O (TM= Sc, Ti, V, Cr) framework are 169 K, 68 K, 203 K, and 190 K, respectively. Based on Bader charge analysis, we found that the origin of the half-metallicity at Fermi energy can be partially attributed to the transfer of electrons from TM atoms to the g-C₃N₄ nanosheet. In addition, we found that not only electrons but also holes can induce half-metallicity for 2D g-C₃N₄ nanosheets, which may help to understand the origin of half-metallicity for graphitic carbon nitride.     

CrO2块体及其(0 0 1)和(1 0 0)表面的电子结构和磁性质

基于密度泛函理论的第一性原理计算,我们研究了CrO2块体以及其(1 0 0)和(0 0 1)表面的磁性和电子结构。CrO2(1 0 0)表面中表面层Cr原子向内收缩,而(0 0 1)表面中的表面层Cr原子却向外伸展;越往内层,原子驰豫幅度越小。由于表面效应。表面层原子的磁矩有了大幅的提升,其中(1 0 0)表面中表面层Cr原子的磁矩最高,为3.03μB。电子结构计算表明,CrO2 (1 0 0)和(0 0 1)表面均保持了块体中良好的半金属性,并且半金属带隙在(1 0 0)表面中受到了进一步的拓宽,因此具有更稳定的半金属性     

Half-Heusler合金Cu1-xFexMnSb的电子结构和反铁磁-铁磁相变简

基于密度泛函理论(DFT),使用局域密度近似(LDA)研究了Heusler合金Cu1-xFex MnSb的电子结构和反铁磁-铁磁相变.研究发现,两种磁状态下的合金晶格常数随掺杂浓度x变化很好地满足Vegard定理.当x0.5时,铁磁态合金的总磁矩很好地符合SP规律,然而当x0.5时,却发生了明显的偏离.由于整个体系存在RKKY和超交换磁耦合的竞争,因而在x=0.25时,我们观察到了独特的反铁磁—铁磁相变.进一步的态密度分析发现,Cu的掺杂浓度可以有效调整铁磁态合金的费米面位置,并且反铁磁态合金由于不同自旋方向的Mn原子的分波态密度相互补偿,总态密度形成了几乎完全对称的自旋向上带和自旋向下带.     

Electronic structure and magnetic properties of X2YZ (X = Co,Y = Mn,Z = Ge,Sn) type Heusler compounds: a first principle study

We performed the structure optimization followed by the calculation of electronic structure and magnetic properties on Co₂MnGe and Co₂MnSn. The structure optimization was based on generalized gradient approximation exchange correlation and full potential linearized augmented plane wave (FP-LAPW) method. The calculation of electronic structure was based on FP-LAPW method using local spin density approximation. We have studied the electronic structure and magnetic properties. The calculated density of states and band structures shows the half-metallic ferromagnets character of Co₂MnGe and Co₂MnSn.     

第一性原理研究闪锌矿结构MnSb和MnBi半金属性和磁性的稳定性

采用基于第一性原理的全势能线性缀加平面波方法对闪锌矿结构MnSb和MnBi的电子结构进行自旋极化计算。闪锌矿结构MnSb和MnBi处于晶格平衡时都是半金属性的,并且它们自旋向下电子能带带隙分别是1.32eV 和1.27eV。闪锌矿结构MnSb和MnBi的自旋总磁矩都为4.00μB/formula,总磁矩主要来源于Mn的原子磁矩,Sb和Bi的原子磁矩对总磁矩的贡献很小而且为负值,它们具有明显的铁磁性特征. 使晶体晶格在±10%的范围内发生各向同性形变,对闪锌矿结构MnSb和MnBi的电子结构进行计算. 计算结果表明,当晶格各向同性形变分别为-1 % ~ 10 %和-4 % ~10 %时,闪锌矿结构MnSb和MnBi仍然保持半金属铁磁性,并且总磁矩都稳定于4.00μB/formula.     

Half-Heusler合金NiMn1-xNbxSb的磁性和半金属稳定性

基于密度泛函理论的第一性原理计算,我们系统地研究了half-Heusler合金NiMn₁-_xNb_xSb的电子结构、磁性和半金属稳定性.结果表明合金的晶格常数和磁性分别很好地符合Vegard定理和S1ater-Pauling规则;当掺杂浓度为25%时,合金的费米面恰好位于其自旋向下带隙的中部.从而呈现最稳定的半金属性.此外,当前的研究也显示Ni-Mn和Ni-Nb之间的d电子杂化依赖于RKKY间接交换机制,共同贡献于合金的总磁矩.     

第一性原理研究闪锌矿结构MnSb和MnBi半金属性和磁性的稳定性

采用基于第一性原理的全势能线性缀加平面波方法对闪锌矿结构MnSb和MnBi的电子结构进行自旋极化计算。闪锌矿结构MnSb和MnBi处于晶格平衡时都是半金属性的,并且它们自旋向下电子能带带隙分别是1.32eV 和1.27eV。闪锌矿结构MnSb和MnBi的自旋总磁矩都为4.00μB/formula,总磁矩主要来源于Mn的原子磁矩,Sb和Bi的原子磁矩对总磁矩的贡献很小而且为负值,它们具有明显的铁磁性特征. 使晶体晶格在±10%的范围内发生各向同性形变,对闪锌矿结构MnSb和MnBi的电子结构进行计算. 计算结果表明,当晶格各向同性形变分别为-1 % ~ 10 %和-4 % ~10 %时,闪锌矿结构MnSb和MnBi仍然保持半金属铁磁性,并且总磁矩都稳定于4.00μB/formula.