Research of spatial resolution in external electro-optic probing

A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.     

Recent developments in polymeric charge transfer complexes

The recent literature on polymeric charge transfer complexes is reviewed with emphasis on the author's own work. After a definition of the area and a survey of investigations on the spatial arrangement of donor and acceptor sites in the solid state, a variety of applications of these complexes is presented. Electrically conductive polymers are excluded. These applications are: compatibilization of polymer blends, liquid crystalline supramolecular organization, new developments in photo-conductivity, electroluminescence, nonlinear optical properties, photorefractivity and reversible optical storage.     

超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展，其中包括扭快光电材料的特性、高速光电器件的基本原理，着重介绍了若干主要的用快光电测量技术．     

Nanostructure and dielectric properties of a twist-bend nematic liquid crystal mixture

We present freeze-fracture transmission electron microscopy (FF-TEM), dielectric spectroscopy and electro-optic measurements on a dimeric liquid crystal mixture, which previously was proposed to form the twist-bend nematic (N_tb) phase. Our FF-TEM studies provide a direct image of a 10.5 nm periodic structure, consistent with the expected nanoscale, heliconical twist-bend modulation of the molecular orientation. Dielectric measurements in the 100 Hz to 10 MHz range reveal three nearly Debye-type dispersion processes in the nematic and the twist-bend phase. Low frequency 8 V/µm electric fields applied on planar cells cause the optical-scale stripe texture (another characteristic feature of the N_tb phase) to disappear. Higher (>16 V/µm) fields gradually realign the heliconical axis along the electric field; it relaxes back after the field removal.     

高功率激光装置前端系统激光脉冲的时间整形及修正技术

针对激光惯性约束聚变实验研究对高功率激光驱动器前端系统复杂时间形状种子激光脉冲的需求,应用孔径耦合带状线集成波导整形系统设计了满足需要的前端整形激光脉冲。用一种新方法精确计算了孔径耦合带状线电脉冲整形器的耦合系数和孔径宽度的数值关系,并针对高衬比度整形激光脉冲的需求,提出了高衬比度双极型集成波导整形系统方案。由该系统可以得到100 ps脉冲前沿、1～3 ns脉冲宽度可调、高衬比度(大于100:1)、光滑无纹波调制、可精确满足神光Ⅱ八路及第九路装置需求的前端整形激光脉冲。     

基于光子数目比较的激光测距法

提出了一种新颖的激光测距方法。该方法避开了传统激光测距法中使用复杂辅助电子设备对脉冲计时或比较相位差的过程,而主要通过光学手段分析和提取待测距离信息,最终通过比较大量光子数目的方法求得待测距离。并利用单轴晶体的双折射和全内双反射性质,用特殊结构的单块LiNbO3晶体设计了实施该方法的主体装置。结果表明,该激光测距法同目前普遍使用的激光测距法相比,不但简化了结构,而且有很高的测距精度,从而为激光测距开拓了一种新的思路。     

新型结构超宽带LiNbO3电光调制器的优化设计

采用有限元软件对新型结构的铌酸锂电光调制器进行了优化设计.分析表明,采用脊波导和T型电极相结合的方式,能在保持高的特征阻抗的同时有效的实现相速匹配和有效降低电极损耗,从而较好的提高器件性能,是一种比较有潜力的调制器.利用优化结果,给出一种带宽达153 GHz,半波电压为8.55 V,特征阻抗为44 Ω的调制器的设计例子.     

温度对铌酸锂电光相位调制特性的影响

利用折射率椭球基本理论对线性电光效应进行了分析,对单轴晶体铌酸锂电光相位调制器的温度特性进行了研究。通过计算机进行数值模拟计算,分析了加电场时光通过LiNbO3电光调制器后出射光的相位变化与温度间的关系,得出在横向和纵向调制中温度对相位改变的影响。研究发现,无论在横向还是在纵向调制下,入射光偏振方向不同但其各自受温度影响的相位变化趋势大体一致,即随着晶体中温度的增加而增大。计算结果表明,LiNbO3电光调制的最佳使用方案为：电场沿x主轴方向施加,入射光偏振方向为感应主轴x’方向,且LiNbO3电光调制器粟用横向相位调制方式。     

Optical modulator using metal-oxide-semiconductor type Si ring resonator

Electric-field drive optical modulators using a Si ring resonator were fabricated on silicon-on-insulator (SOI) wafers. The fabricated resonators consisted of Si waveguides with width and thickness of 1.0 and 0.3 μm, respectively. In order to induce the linear electro-optic (EO) effect in the Si core layer, the strain was applied by covering the layer with Si₃N₄ film (0.26 μm thick) deposited by low pressure chemical vapor deposition (LPCVD) at 750 °C. The vertical electric-field was applied to the Si waveguide through the top and bottom cladding layers, and the optical output from the drop port at the resonance wavelength was measured. At a wavelength of 1501.6 nm, the optical modulation of 33% was obtained at 200V (electric-field at the silicon surface ∼3 × 10⁵ V/cm, nearly the breakdown field). The resonance wavelength was shifted toward the short wavelength side by applying both positive and negative voltages, this shift was explained by carrier concentration modulation. The linear EO effect in the Si core layer was not observed, presumably because the strain in the Si core layer was too small.     

Submicron External Electro-optic Measuring System Based on an Electro-optic Solid Immersion Lens

In this paper, all electro-optic solid immersion lens (EOSIL) is introduced, which is made of GaAs. A reflecting external electro-optic measuring system based on the EOSIL is built. With a hemispherical GaAs EOSIL used as the external probe, 0.7 µm spot size is obtained when the wavelength of the probing beam from a laser diode is 1.3 µm and a microscope objective with 0.3 numerical aperture is used. The principle of the measuring system is analyzed by Jones matrix. By using the system, the electrical signals propagating on a microstrip transmission line are successfully measured. The voltage sensitivity about 5 mV/ is measured when 10 kHz sinusoidal electric signal is applied on the microstrip line.