The role of positive gaseous ions in the formation of secondary electron images in low vacuum scanning electron microscopes is discussed. This paper describes the charging processes and related effects that occur during high vacuum imaging of insulators and then discusses the influence of ions on those processes. The ions are responsible for a number of phenomena, including distortion of the electric field above and below the specimen surface due to space charge, removal of excess negative charge from the specimen, alteration of the specimen surface barrier, and scavenging/filtering of the secondary electron emission. The resulting electron-specimen-ion interactions can give rise to interesting contrast effects that are unique to this class of instruments. 相似文献
The structure I clathrate hydrate of carbon monoxide has been studied using dielectric measurements and13C NMR spectroscopy. Broad, weak dielectric absorption curves with maxima at 2.2–3.8 K yieldEa = 0.14 kJ mol–1 for the average Arrhenius activation energy associated with the reorientation of the low polarity guest. Except for H2S this represents the fastest reorienting polar guest known among the clathrate hydrates. The low temperature dielectric absorption curves can best be fitted with a Cole-Davidson asymmetric distribution of relaxation times and activation energies (with = 0.06 at 4 × 106 Hz), which at 107 Hz has been resolved into a double symmetric distribution of discrete relaxation times for CO in the small and large cages. The cross-polarization magic angle spinning13C NMR spectra indicate identical chemical shifts for CO in the small and large cages, in contrast to other hydrates. The static spectra show that the CO molecules undergo anisotropic reorientation in the large cages and that there is still considerable mobility at 77 K. One possible model for the anisotropic motion has the CO rapidly moving among sites over each of the 14 faces of the cage with the CO axis orientated towards the cage centre. The cage occupancy ratio at 220 K,
s/
L = 1.11, indicates slightly greater preference of CO for the small cage.Dedicated to Dr D. W. Davidson in honor of his great contributions to the sciences of inclusion phenomena. 相似文献
A low-operating voltage and high performance polymeric field effect transistors using octadecylphosphonic acid-treated high-k AlOx and HfO2 hybrid dielectrics were demonstrated. High-k metal oxide hybrid dielectrics were prepared by oxygen plasma treatment of deposited Al film for AlOx and by spin coating of solution-processable HfO2 sol-gel solution for HfO2 in combination with phosphoric acid-based self-assembled monolayer (SAM), resulting in high capacitance (10 nF/cm2 for SiO2, 600 nF/cm2 for AlOx and 580 nF/cm2 for HfO2). With phosphoric acid-based SAM on high-k metal oxide and thermal annealing of thieno[3,2-b]thiophene-based conducting polymer, the device performance was significantly enhanced. The highest mobility of the transistors using ODPA-treated AlOx as a gate dielectric is 2.3 × 10?2 cm2 V?1 s?1 in the saturation region with the source-drain of ?2 V. In ODPA-treated HfO2 hybrid dielectric, the saturated mobility is 1.1 × 10?2 cm2 V?1 s?1 and the threshold voltage was measured to be ?0.31 V, which is at least one order lower than SiO2 hybrid dielectric (?3 V). 相似文献
In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 1011 cm–2 eV–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10–5A/cm2 at Vfb + 1 V). These merits should be attributed to the complementary properties of Y2O3 and Ta2O5:Y can effectively passivate the large amount of oxygen vacancies in Ta2O5, while the positively‐charged oxygen vacancies in Ta2O5 are capable of neutralizing the effects of the negative oxide charges in Y2O3. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.
Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets. 相似文献
Silicon oxide (SiO2) and silicon oxynitride (SiOxNy) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted. 相似文献