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本文综述了酚醛 重氮萘醌正性抗蚀剂的溶解抑制机理,主要包括(1)分子间氢键作用机理;(2)偶联反应机理;(3)两步即静态、动态溶解抑制机理;(4)表面沉积溶解抑制机理;(5)酚醛树脂的分子溶解及相关的抑制机理.  相似文献   
2.
A positive-working photosensitive polyimide precursor based on fluorinated poly(amic acid) (FPAA) and 2,3,4-tris(1-oxo-2-diazonaphthoquinon-4-ylsulfonyloxy)benzophenone (D4SB) as a photosensitive compound has been developed. FPAA was prepared by ring-opening polyaddition of dianhydrides, pyromellitic dianhydride and biphenyltetracarboxylic dianhydride, with diamine, 2,2′-bis(trifluoromethyl)benzidine, in methanol. The FPAA film showed excellent transparency to UV light and good solubility in a wide range of organic solvents. The dissolution behavior of FPAA containing 30 wt % D4SB after exposure was studied, and it was found that the difference of dissolution rate between exposed and unexposed parts was enough to get high contrast due to the photochemical reaction of D4SB in the polymer film. The photosensitive fluorinated polyimide (FPI) precursor containing 30 wt % D4SB showed a sensitivity of 80 mJ cm−2 and a contrast of 7.8 with 365 nm light when it was developed with 0.3% aqueous tetramethyl ammonium hydroxide solution at room temperature. The FPI film cured up to 360°C had a low coefficient of thermal expansion of 10.3 ppm °C−1 and a low dielectric constant of 3.04. © 1998 John Wiley & Sons, Inc. J. Polym. Sci. A Polym. Chem. 36: 2261–2267, 1998  相似文献   
3.
Polyimides having pendant carboxyl groups were prepared by a direct one‐pot polycondensation of 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) with 3,5‐diaminobenzoic acid (DABz) and bis[4‐(3‐aminophenoxy)phenyl]sulfone (m‐BAPS) in the presence of a γ‐valerolactone/pyridine catalyst system using N‐methyl‐2‐pyrrolidone (NMP)/toluene mixture as a solvent at 180 °C. The obtained polyimides were soluble in dipolar aprotic solvents such as dimethylformamide, dimethyl sulfoxide, and NMP as well as in tetrahydrofuran and aqueous basic solution. The solubility of the polyimides was dependent on the diamine composition. Photosensitve polyimide (PSPI) systems composed of the polyimides and diazonaphthoquinone compound as a photosensitive material gave positive‐tone behavior by UV irradiation, followed by development with aqueous tetramethylammonium hydroxide (TMAH) solution. The scanning electron microscopic photograph of the resulting image showed 10‐μm line/space resolution with about 15 μm of film thickness. The PSPIs baked at 350 °C for a short time had excellent thermal resistance comparable to the original polyimides. © 2001 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 39: 934–946, 2001  相似文献   
4.
The fluorinated polyimide PI(6FDA/HFBAPP) was prepared by the reaction of 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) with 2,2‐bis[4‐(4‐aminophenoxy)phenyl]hexafluoropropane (HFBAPP) in 1‐methyl‐2‐pyrrolidone/toluene. A multiblock copolyimide with both fluorinated and rigid‐rod segments, PI(6FDA/HFBAPP)(BPDA/2‐DMB), was prepared by the addition of a second dianhydride, 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA), and a second diamine, 2,2′‐dimethylbenzidine (2‐DMB), to the polyimide main chain. The potential lithographic performance of photosensitive polyimides composed of nonphotosensitive fluorine‐containing polyimides and photosensitive diazonaphthoquinone (DNQ) was studied on the basis of a new imaging principle recently proposed by our laboratory, that is, reaction development patterning. Neat PI(6FDA/HFBAPP) showed a low dielectric constant (?) of 2.41 and a low dissipation factor (tan δ) of 0.0027 at 20 GHz, and a 10‐μm resolution of the fluorinated polyimide/DNQ system was demonstrated with reactive development with a solution including ethanolamine after ultraviolet exposure. Although slight changes in the dielectric properties were observed in the presence of DNQ residues, these values (? = 2.63 and tan δ = 0.0033 at 20 GHz) were low enough for use in microelectronic applications. However, PI(6FDA/HFBAPP)(BPDA/2‐DMB), having a lower coefficient of thermal expansion (CTE; 33 ppm/°C) than PI(6FDA/HFBAPP) (49 ppm/°C), exhibited good positive photosensitivity, whereas the relatively low‐CTE multiblock copolyimide displayed a much higher ? value (3.48 at 1 MHz) than the highly fluorinated polyimide (2.88 at 1 MHz). A film consisting of PI(6FDA/HFBAPP)(BPDA/2‐DMB) and the remaining DNQ derivatives showed a CTE value comparable to that of the neat polyimide film. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 861–871, 2003  相似文献   
5.
Films of a commercially available polyarylate (U polymer®) containing a photosensitive agent were prepared by means of spin‐coating onto copper foil, which showed positive‐tone behavior after UV irradiation and development with an ethanolamine/N‐methylpyrrolidone/H2O mixture. Scanning electron microscope photographs of the images exhibited fine patterns (≈10 μm line/space resolution) with 9–14 μm film thickness. The pattern‐forming mechanism is based on the reaction development patterning (RDP) process, where the main pattern‐forming reaction occurs during development.  相似文献   
6.
A soluble multiblock copolyimide without specific functional groups such as OH and COOH was prepared by a direct one‐pot polycondensation of two types of dianhydrides and diamines in the presence of γ‐valerolactone/pyridine catalyst using N‐methylpyrrolidone (NMP)/toluene mixture as a solvent. The polyimide film containing the photosensitive agent diazonaphthoquinone (DNQ) compound gave positive‐tone behavior by UV irradiation, followed by development in a mixture of ethanolamine/NMP/H2O (1/1/1 by weight). The scanning electron microscopic photograph of the resultant image showed fine patterns with about 20 μm film thickness. Its pattern forming was based on the photorearrangement of diazonaphthoquinone, a process in which the ring‐opening reaction of imide units of the polyimide with the amine used as a developer and the following degradation of the polymer are induced. Such a new imaging technique combines principles of photolithography and etching of a polyimide to give, what we call, reaction development patterning in which the main chemical reactions directly related to the pattern formation occur during development. © 2001 John Wiley & Sons, Inc. J Polym Sci Part A: Polym Chem 39: 3451–3463, 2001  相似文献   
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