Simple Patterning of Cells on a Biocompatible Nonchemically Amplified Resist

Summary: A simple lithographic process in conjunction with a novel biocompatible nonchemically amplified photoresist material was successfully used for cell patterning. UV light irradiation on selected regions of the nonchemically amplified resist film renders the exposed regions hydrophilic by the formation of carboxylic groups. Mouse fibroblast cells were found to be preferentially aligned and proliferated on the UV light exposed regions of the nonchemically amplified resist film where carboxylic groups were present.

Schematic representation of the simplified lithographic process used for cell patterning.     

Novel Top‐Surface Imaging Process by Selective Chemisorption of Poly(dimethyl siloxane) on Diazoketo‐Functionalized Single Component Photoresist

A novel top‐surface imaging process was successfully established using selective chemisorption of amine‐functionalized poly(dimethyl siloxane) onto the carboxylic groups formed on the surface of diazoketo‐functionalized polymer film by UV light irradiation. The chemisorbed poly(dimethyl siloxane) worked as an efficient etch mask for the subsequent oxygen plasma etching process for pattern generation. High‐resolution patterns were resolved with the new imaging process.

     

A new type of eco‐friendly resist based on nonchemically amplified system

Novel water‐processable photopolymers were designed to be useful as environment‐friendly photolithographic materials. By copolymerization of 2‐(2‐diazo‐3‐oxo‐butyryloxy)ethyl methacrylate (DOBEMA), hydroxyethyl methacrylate (HEMA), methacryllic acid (MAA), and sodium 4‐vinylbenzenesulfonate (SVBS), two kinds of polymers, poly(DOBEMA‐co‐HEMA‐co‐SVBS) for negative‐tone resist and poly(DOBEMA‐co‐MAA) for positive‐tone resist, were synthesized and their photolithographic properties were investigated. The single component negative‐tone resist produced 0.8 μm line and space patterns using a mercury‐xenon lamp in a contact printing mode using pure water as casting and developing solvent at a exposure dose of 25 mJ cm^?2. On the other hand, the single component positive‐tone resist produced 0.8 μm line and space patterns at a much higher dose of 150 mJ cm^?2. Thus, the negative resist showed much improved sensitivity when compared with the positive resist and the reported nonchemically amplified resists. This sensitivity is comparable with those of typical chemically amplified resists. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 7534–7542, 2008     

Novel Photobleachable Deep UV Resists Based on Single Component Nonchemically Amplified Resist System

Summary: Photobleachable deep UV resists were designed by introducing diazoketo groups in polymer side chains. The diazoketo groups undergo the Wolff rearrangement upon irradiation in the deep UV, affording ketenes that react with water to provide base‐soluble photoproducts. The polymers were synthesized by radical copolymerization of 2‐(2‐diazo‐3‐oxo‐butyryloxy)‐ethyl methacrylate, 2‐hydroxyethyl methacrylate, and γ‐butyrolacton‐2‐yl methacrylate. The single component resist showed 0.7 µm line and space patterns using a mercury‐xenon lamp in a contact printing mode.

Scanning electron micrograph of 0.7 µm line and space patterns printed with polymer B at a dose of 70 mJ · cm⁻².