Polymer 4D printing: Advanced shape-change and beyond

4D printing is an exciting branch of additive manufacturing. It relies on established 3D printing techniques to fabricate objects in much the same way. However, structures which fall into the 4D printed category have the ability to change with time, hence the “extra dimension.” The common perception of 4D printed objects is that of macroscopic single-material structures limited to point-to-point shape change only, in response to either heat or water. However, in the area of polymer 4D printing, recent advancements challenge this understanding. A host of new polymeric materials have been designed which display a variety of wonderful effects brought about by unconventional stimuli, and advanced additive manufacturing techniques have been developed to accommodate them. As a result, the horizons of polymer 4D printing have been broadened beyond what was initially thought possible. In this review, we showcase the many studies which evolve the very definition of polymer 4D printing, and reveal emerging areas of research integral to its advancement.     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

Implementing a Two-Photon Three-Degrees-of-Freedom Hyper-Parallel Controlled Phase Flip Gate Through Cavity-Assisted Interactions

Hyper-parallel quantum information processing is a promising and beneficial research field. Herein, a method to implement a hyper-parallel controlled-phase-flip (hyper-CPF) gate for frequency-, spatial-, and time-bin-encoded qubits by coupling flying photons to trapped nitrogen vacancy (NV) defect centers is presented. The scheme, which differs from their conventional parallel counterparts, is specifically advantageous in decreasing against the dissipate noise, increasing the quantum channel capacity, and reducing the quantum resource overhead. The gate qubits with frequency, spatial, and time-bin degrees of freedom (DOF) are immune to quantum decoherence in optical fibers, whereas the polarization photons are easily disturbed by the ambient noise.     

V20+离子1s23d-1s2nf的跃迁能和振子强

用全实加关联方法计算了类锂V20+离子1s23d-1s2nf的跃迁能和偶极振子强度.依据量子亏损理论, 确定了1s2nf系列的量子数亏损,用这些作为能量的缓变函数的量子亏损,实现对该Rydberg系列任意高激发态(n≥10)的能量的可靠预言.将这些分立态振子强度与量子亏损理论相结合,得到在电离域附近束缚态间的偶极跃迁振子强度以及束缚态-连续态跃迁的振子强度密度,从而将V20+离子的这一重要光谱特性的理论预言外推到整个能域.     

多级制造系统的最优化模型及其应用

多级制造系统是现代制造业的主要加工方式，系统的每一级的加工速度和加工周期是系统设计的主要决策变量，正确确定这两个变量是系统得到优化的主要目标。本文导出了系统优化的基本模型，它包括系统各级的生产时间、等待时间、生产速度、生产成本以及系统的循环时间、总成本、产品利润和利润率等，并给出了一个应用实例。     

Investigating laser rapid manufacturing for Inconel-625 components

This paper presents an investigation of laser rapid manufacturing (LRM) for Inconel-625 components. LRM is an upcoming rapid manufacturing technology, it is similar to laser cladding at process level with different end applications. In general, laser-cladding technique is used to deposit materials on the substrate either to improve the surface properties or to refurbish the worn out parts, while LRM is capable of near-net shaping the components by layer-by-layer deposition of the material directly from CAD model. In the present study, a high-power continuous wave (CW) CO₂ laser system, integrated with a co-axial powder-feeding system and a three-axis workstation were used. The effect of processing parameters during LRM of Inconel-625 was studied and the optimum set of parameters for the maximum deposition rate was established employing Orthogonal L9 array of Taguchi technique. Results indicated that the powder feed rate and the scan speed contributed about 56% and 26%, respectively to the deposition rate, while the influence of laser power was limited to 10% only. Fabricated components were subjected to non-destructive testing (like—ultrasonic testing, dye-penetrant testing), tensile testing, impact testing, metallographic examinations and micro-hardness measurement. The test results revealed defect-free material deposition with improved mechanical strength without sacrificing the ductility.     

单件小批生产系统下模糊优化的动态随机投入产出模型

本文针对单件小批量生产系统 ,建立了模糊优化的动态随机投入产出模型 ,同时给出了该模型的递推解法 ,并用此模型对某单件小批企业在生产计划期的商品量进行了规划     

Manufacturing cell formation using similarity coefficients and a parallel genetic TSP algorithm: Formulation and comparison

Many algorithms have been proposed to form manufacturing cells from component routings. However, many of these do not have the capability of solving large problems. We propose a procedure using similarity coefficients and a parallel genetic implementation of a TSP algorithm that is capable of solving large problems of up to 1000 parts and 1000 machines. In addition, we also compare our procedure with many existing procedures using nine well-known problems from the literature.

The results show that the proposed procedure compares well with the existing procedures and should be useful to practitioners and researchers.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

Brauer第24问题的推广

本文对Ｂｒａｕｅｒ第２４问题［１］作了推广．利用Ｄａｄｅ关于循环块的理论得到如下结果：设Ｇ是有限群，Ｐ是Ｇ的循环Ｓｙｌｏｗｐ子群．设｜Ｐ｜＝ｐａ，ａ为正整数．令Ｐｉ为Ｐ中唯一的ｐｉ阶子群，１ｉａ．则｜Ｃｌ（Ｇ）｜＝｜Ｃｌ（ＮＧ（Ｐｉ））｜的充分必要条件为ＰｉＧ．