Crystallization and morphology of poly(vinylidene fluoride)/poly(3‐hydroxybutyrate) blends. I. Spherulitic morphology and growth by polarized microscopy

The development of the poly(3‐hydroxybutyrate) (PHB) morphology in the presence of already existent poly(vinylidene fluoride) (PVDF) spherulites was studied by two‐stage solidification with two separate crystallization temperatures. PVDF formed irregular dendrites at lower temperatures and regular, banded spherulites at elevated temperatures. The transition temperature of the spherulitic morphology from dendrites to regular, banded spherulites increased with increasing PVDF content. A remarkable amount of PHB was included in the PVDF dendrites, whereas PHB was rejected into the remaining melt from the banded spherulites. When PVDF crystallized as banded spherulites, PHB could consequently crystallize only around them, if at all. In contrast, PHB crystallized with a common growth front, starting from a defined site in the interfibrillar regions of volume‐filling PVDF dendrites. It formed by itself dendritic spherulites that included a large number of PVDF spherulites. For blends with a PHB content of more than 80 wt %, for which the PVDF dendrites were not volume‐filling, PHB first formed regular spherulites. Their growth started from outside the PVDF dendrites but could later interpenetrate them, and this made their own morphology dendritic. These PHB spherulites melted stepwise because the lamellae inside the PVDF dendrites melted at a lower temperature than those from outside. This reflected the regularity of the two fractions of the lamellae because that of those inside the dendrites of PVDF was controlled by the intraspherulitic order of PVDF, whereas that from outside was only controlled by the temperature and the melt composition. The described morphologies developed without mutual nucleating efficiency of the components. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 873–882, 2003     

Influence of the Type of a Ligand on the Intensity of Luminescence of Ln3+ Ions in Aqueous Solutions

The luminescence characteristics of hydrated Ln³⁺ ions and their complexes with some acidic ligands have been investigated. The possibility of determining the stability of the complexes of lanthanides in solutions from the intensity of luminescence bands is shown. The influence of the characteristic features of the f-electron shell of Ln³⁺ on the formation of the spectrochemical series is discussed.     

Yellow‐light‐emitting cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative: Its synthesis and optical properties

A soluble cyano‐substituted poly[(1,3‐phenylene vinylene)‐alt‐(1,4‐phenylene vinylene)] derivative ( 9 ) was synthesized and characterized. Comparison between 9 and its model compound ( 10 ) showed that the chromophore in 9 remained to be well defined as a result of a π‐conjugation interruption at adjacent m‐phenylene units. The attachment of a cyano substituent only at the β position of the vinylene allowed the maximum electronic impact of the cyano group on the optical properties of the poly(p‐phenylene vinylene) material. At a low temperature (?108 or ?198 °C), the vibronic structures of 9 and 10 were partially resolved. The absorption and emission spectra of a film of 9 were less temperature‐dependent than those of a film of 10 , indicating that the former had a lower tendency to aggregate. A light‐emitting diode (LED) based on 9 emitted yellow light (λ_max ≈ 578 nm) with an external quantum efficiency of 0.03%. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3149–3158, 2003     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Luminescence properties of anodic aluminum oxide films with organic luminophores embedded into pores

Luminescence properties of porous anodic aluminum oxide films formed in a 0.6 M solution of citric acid and luminescence of paraterphenyl, perylene, coumarin 7, and rhodamine 6G dyes adsorbed by the films are investigated. The nature of emitting centers in anodic aluminum oxide is revealed. Intense photoluminescence of all tested dyes embedded into pores of anodic aluminum oxide has been found. A redshift of fluorescence spectra of dyes adsorbed by the matrix and emergence of an additional longwave band have been detected. Data obtained can be used in developing new thin-film luminescent coatings for future applications in optoelectronics and molecular electronics. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No 4, pp. 483–488, July–August, 1997.     

F／Cl比与Eu~（2＋）：BaFCl中F色心的浓度和光激励截面的关系

研究了Ｅｕ（２＋）：ＢａＦｘＣｌ２在紫外线辐照下的光激励发光。通过改变激励方式及激励光的扫描方向，给出了Ｅｕ（２＋）：ＢａＦｘＣｌ２－ｘ光激励发光过程中，两种Ｆ色心的浓度比值与光激励截面比值的测定方法。利用这种测定方法，进一步研究了两种Ｆ色心的浓度比值和光激励截面比值与Ｆ／ＣＩ比值的关系。     

The effect of complexing processes on energy transfer Tl+→Gd3+ and Tl+→Tb3+ in glass

T. Shevchenko Kiev University, 252022 Kiev, Pr. Akad. Glushakova, 6, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 192–196, May–June, 1995.