纳米MOSFET迁移率解析模型

从玻尔兹曼方程出发，重新计算了纳米MOSFET沟道内的载流子所服从的分布函数，特别是考虑了纳米MOSFET横向电场和纵向电场之间的相互作用，并且以得到的非平衡状态下的分布函数为基础，考虑载流子寿命和速度的统计分布，给出了纳米MOSFET载流子迁移率的解析表达式.通过与数值模拟结果进行比较和分析，该迁移率解析模型形式简洁、物理概念清晰，且具有相当精度. 关键词： 玻尔兹曼方程 纳米MOSFET 迁移率 沟道有效电场     

MOCVD生长的GaN单晶膜透射光谱研究

采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜，使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品，实验结果表明：GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致，即透射率越大，半高宽越小，结晶质量越好；而X射线双晶衍射峰半高宽最小的样品，其PL谱的带边峰却很弱，这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系，同时还报导了一种特殊工艺生长的高阻GaN样品的RBS／沟道结果。     

Influence of channeling effects on ion distribution and damage profiles during high energy ion implantation in Si

Nitrogen implantation has been performed in silicon [001] crystals in carefully controlled alignment conditions. The channeling effects are clearly evident when implanting in [001] and [011] directions at energies ranging from 0.6 to 1.4 MeV. Both ion distribution and damage profiles are strongly influenced by channeling effects during ion implantation. The angular region around the [001] direction has been also investigated by implanting at small angles with respect to the axis. The same kind of study has been performed by implanting at different angles with respect to the planar (011) direction. The ion distributions (investigated by SIMS) show a strong dependence upon the alignment conditions. Moreover in high energy ion implantation, the lattice damage is located deep inside the crystal, leaving the surface layer almost unperturbed. The channeling effects on the damage production have been investigated by double crystal diffraction (DCD) in the low-dose regime and by RBS-channeling experiments (after implantation at doses greater than 1 × 10¹⁵ cm^–2) and for different ion alignment conditions.A big increase in the ion ranges and a strong reduction in the lattice damage is evident when implanting along major crystal axes. No saturatíon of the lattice damage and of the channelled component of the beam has been detected if the implantation is performed parallel to the [011] axis.     

Boron implantation in Si: Channeling effects studied by SIMS and simulation

The axial channeling behaviour of boron implants in <100>, <110> and <111> silicon wafers is investigated by SIMS. Large differences of channeling characteristics such as channeled projected range (the projected range of channeled ions or channeling peak) and the fraction of channeled to implanted ions are observed among the three major crystal orientations. Within the critical angle, the channeling behaviour is very sensitive to the incidence beam angle with respect to crystal orientations. SIMS measurements are performed at different positions along several critical directions over a whole wafer. Well channeled profiles with an incidence beam angle to crystal orientations of 0 ° are obtained for each ion implantation energy and orientation. The results are used to test various models of ion implantation by simulation. A 3-parameter model for electronic stopping power of boron in silicon was proposed.     

Preparation and partial characterization of a soluble site-to-site directed enzyme complex composed of alcohol dehydrogenase and lactate dehydrogenase

A soluble, bifunctional enzyme complex has been prepared by crosslinking lactate dehydrogenase and alcohol dehydrogenase with glutaraldehyde. The crosslinking was performed on a solid phase while the active sites of alcohol dehydrogenase and lactate dehydrogenase were held adjacent to one another with the aid of a bis-NAD analog. Subsequently, the enzyme complex was released from the solid phase. The soluble enzyme complex was then purified by using NAD-Sepharose as an affinity adsorbent. Based on gel filtration experiments, the complex was estimated to consist of one of each dehydrogenase. By using a third enzyme, lipoamide dehydrogenase, which competes with lactate dehydrogenase for NADH produced by alcohol dehydrogenase, the effect of site-to-site orientation was studied. It was found that about 83% of the NADH produced by alcohol dehydrogenase was oxidized by site-to-site oriented lactate dehydrogenase compared to a figure of only about 61% obtained in an identical system of separate enzymes. This indicates that given two alternative routes, the preference for the one to lactate dehydrogenase over the one to lipoamide dehydrogenase is enhanced when lactate dehydrogenase and alcohol dehydrogenase are site-to-site oriented.     

Analytical,structural and electrical characterization of SiGe layers by electron microbeam techniques

k-ratios of Ge-L and Si-K measured at different beam energies allow to evaluate simultaneously composition and thickness of SiGe layers on a Si substrate. A simple technique applying backscattered electrons also enables estimation of composition of bulk SiGe and of composition and thickness of relatively thick (200 nm) SiGe layers on Si. Electron channeling patterns of pseudomorphic SiGe/Si structures and of pure Si substrate show no significant differences whereas in relaxed structures a smearing of the pattern with increasing density of misfit dislocations is observed. Under particular conditions the technique of the electron beam induced current permits imaging of recombination-active misfit dislocations with a spatial resolution around 0.2 m. Moreover, a repulsion of holes due to the valence-band offset in a n-Si/SiGe heterostructure was detected.     

Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Calculation of the photon spectrum radiated by a planarly channeled positron bunch with allowance for the medium polarization

The radiation spectrum of a photon bunch with the energy E = mc ²γ = 4 GeV channeled in the (110) plane of a diamond single crystal is calculated numerically, taking into account the inhomogeneous polarization of the medium. Features of the spectrum in the extreme soft region of frequencies are obtained. Characteristics of the calculated spectrum are in agreement with the experimental data obtained in the hard region of frequencies.     

Study of depth-dependent tetragonal distortion of quaternary AIInGaN epilayer by Rutherford backscattering/channeling

<正>A 240-nm thick Al_0.4In_0.02Ga_0.58N layer is grown by metal organic chemical vapour deposition,with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire（0001）.Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN.The results show a good crystalline quality of AlInGaN(x_min= 1.5%) with GaN buffer layer.The channeling angular scan around an off-normal（1213） axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion e_T,which is caused by the elastic strain in the AlInGaN.The resulting AlInGaN is subjected to an elastic strain at interfacial layer,and the strain decreases gradually towards the near-surface layer.It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （e_T=0）.     

高电荷态离子与Si(110)晶面碰撞的沟道效应研究

不同电荷态低速离子(Ar^q+,Pb^q+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额. 通过比较溅射产额与入射角的关系,证实沟道效应的存在. 高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的. 在小角入射条件下,高电荷态离子能够增大溅射产额. 当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应. 关键词： 高电荷态离子 溅射 沟道效应