Quinoid-Aromatic Resonance for Very Small Optical Energy Gaps in Small-Molecule Organic Semiconductors: A Naphthodithiophenedione-oligothiophene Triad System

Organic semiconductors with very small optical energy gaps have attracted a lot of attention for near-infrared-active optoelectronic applications. Herein, we present a series of donor-acceptor-donor (D−A−D) organic semiconductors consisting of a highly electron-deficient naphtho[1,2-b:5,6-b′]dithiophene-2,7-dione quinoidal acceptor and oligothiophene donors that show very small optical energy gaps of down to 0.72 eV in the solid state. Investigation of the physicochemical properties of the D−A−D molecules as well as theoretical calculations of their electronic structures revealed an efficient intramolecular interaction between the quinoidal acceptor and the aromatic oligothiophene donors in the D−A−D molecules; this significantly enhances the backbone resonance and thus reduces the bond length alternation along the π-conjugated backbones. Despite the very small optical energy gaps, the D−A−D molecules have low-lying frontier orbital energy levels that give rise to air-stable ambipolar carrier transport properties with hole and electron mobilities of up to 0.026 and 0.043 cm² V⁻¹ s⁻¹, respectively, in field-effect transistors.     

Novel Red Phosphorescent Polymers Bearing Both Ambipolar and Functionalized IrIII Phosphorescent Moieties for Highly Efficient Organic Light‐Emitting Diodes

A series of novel red phosphorescent polymers is successfully developed through Suzuki cross‐coupling among ambipolar units, functionalized Ir^III phosphorescent blocks, and fluorene‐based silane moieties. The photophysical and electrochemical investigations indicate not only highly efficient energy‐transfer from the organic segments to the phosphorescent units in the polymer backbone but also the ambipolar character of the copolymers. Benefiting from all these merits, the phosphorescent polymers can furnish organic light‐emitting diodes (OLEDs) with exceptional high electroluminescent (EL) efficiencies with a current efficiency (η _L) of 8.31 cd A⁻¹, external quantum efficiency (η _ext) of 16.07%, and power efficiency (η _P) of 2.95 lm W⁻¹, representing the state‐of‐the‐art electroluminescent performances ever achieved by red phosphorescent polymers. This work here might represent a new pathway to design and synthesize highly efficient phosphorescent polymers.

     

一种考虑IGBT基区载流子注入条件的物理模型

提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性. 关键词： 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程     

Organic Ambipolar Conjugated Molecules for Electronics: Synthesis and Structure–Property Relationships

The field of organic electronics has been developed vastly in the past two decades, and the performance and lifetime of these devices are critically dependent on the materials development, device design, deposition processes, and modeling, among which the active materials of organic semiconductor play a crucial role. The unique properties of organic semiconductor are largely based on the versatility to synthesize multifunctional organic conjugated materials by judicious molecular design. To effectively adjust the optoelectronic properties, especially energy levels, of organic semiconductor, the scientists have presented a synthesis methodology of organic ambipolar conjugated molecules, in which typical p‐dope type and n‐dope type segments are incorporated into one molecule. The present review summarizes the progress on organic ambipolar conjugated molecules for electronics in the past few years. Some issues to be addressed are also highlighted and discussed.

     

Band Alignment for Ambipolar-Doping of Sn_xZn_(1-x) Te Alloys

Using the first-principles band-structure method and a special quasirandom structure(SQS) approach,we have systematically calculated the alloy bowing coefficients and the nature band offsets of SnxZn1-x Te alloys.We show that the bowing coefficients and band gaps of these alloys are sensitively composition dependent.Due to wave functions full overlapping and delocalization of the Sn outermost p orbits and Zn s orbits,the coupling between these states is very strong,resulting in a significant downshift of conduction band edge with the increase of the Sn concentration x,While the valence band edge keeps almost unchanged compared with that of the binary ZnTe,thus improving the possibility for ambipolar-doping.     

Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide

Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18~cm²/(V.s) and field-effect electron mobility of 0.031~cm²/(V.s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO₂ gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.     

Twisted olefinic building blocks for low bandgap polymers in solar cells and ambipolar field‐effect transistors

A series of polymers based on 8,8′‐biindeno[2,1‐b]thiophenylidene for use in photovoltaic devices and field‐effect transistors are reported. These structurally twisted olefins are effective building blocks for preparation of low bandgap polymers with optical bandgaps of 1.2–1.5 eV. Device performance, such as V_oc and J_sc, in solar cell devices could be successfully modulated by incorporation of a variety of comonomers. Ambipolar properties in field‐effect transistors using Au electrodes were also studied, with PtBTPDPP exhibiting balanced charge transport properties with hole and electron mobilities of 0.09 and 0.12 cm²·V^?1·s^?1, respectively. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 889–899