首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2594篇
  免费   333篇
  国内免费   594篇
化学   2729篇
晶体学   82篇
力学   182篇
综合类   31篇
数学   7篇
物理学   490篇
  2024年   4篇
  2023年   30篇
  2022年   71篇
  2021年   96篇
  2020年   119篇
  2019年   96篇
  2018年   87篇
  2017年   102篇
  2016年   118篇
  2015年   121篇
  2014年   118篇
  2013年   211篇
  2012年   166篇
  2011年   176篇
  2010年   164篇
  2009年   180篇
  2008年   161篇
  2007年   173篇
  2006年   162篇
  2005年   149篇
  2004年   158篇
  2003年   142篇
  2002年   142篇
  2001年   79篇
  2000年   85篇
  1999年   52篇
  1998年   70篇
  1997年   53篇
  1996年   57篇
  1995年   32篇
  1994年   32篇
  1993年   20篇
  1992年   22篇
  1991年   15篇
  1990年   8篇
  1989年   3篇
  1988年   9篇
  1987年   5篇
  1986年   3篇
  1985年   7篇
  1983年   3篇
  1982年   3篇
  1981年   3篇
  1980年   2篇
  1979年   3篇
  1978年   1篇
  1975年   2篇
  1974年   1篇
  1973年   3篇
  1972年   1篇
排序方式: 共有3521条查询结果,搜索用时 15 毫秒
1.
Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.  相似文献   
2.
3.
周耐根  周浪  杜丹旭 《物理学报》2006,55(1):372-377
用分子动力学方法对5%负失配条件下面心立方晶体铝薄膜的原子沉积外延生长进行了三维模拟.铝原子间的相互作用采用嵌入原子法(EAM)多体势计算.模拟结果再现了失配位错的形成现象.分析表明,失配位错在形成之初即呈现为Shockley扩展位错,即由两个伯格斯矢量为〈211〉/6的部分位错和其间的堆垛层错组成,两个部分位错的间距、即层错宽度为1.8 nm,与理论计算结果一致;外延晶体薄膜沉积生长中,位错对会发生滑移,但其间距保持稳定.进一步观察发现,该扩展位错产生于一种类似于“局部熔融-重结晶”的表层局部无序紊乱- 关键词: 失配位错 外延生长 薄膜 分子动力学 铝  相似文献   
4.
 A simple and direct spectrofluorimetric method has been developed for the determination of aluminum using alizarin red PS (1,2,4-trihydroxy 9,10-anthraquinone-3-sulfonic acid). The method is based on the strong fluorescence (480/564 nm) of Al3+ and alizarin red. Experimental parameters such as pH, concentration of the ligand, ionic strength of the solution, reaction time and temperature were optimized in order to maximize the analytical signal. Interferences of several ions (anions and cations) were studied and evaluated. The linear range of the method extends from 3 to 100 μg L−1. Limit of detection (3sb) was 0.9 μg L−1. The method was tested with a silicate certified reference material. Interferences were eliminated by a liquid extraction with cupferron. Author for correspondence. E-mail: aucelior@rdc.puc-rio.br Received September 10, 2002; accepted January 15, 2003 Published online May 5, 2003  相似文献   
5.
A new mixed organic-inorganic photosensitizer, based on 4-benzoylbenzoate intercalated into a layered double hydroxide has been prepared, characterized and successfully tested for the photo-oxidation of dialkylsulfides, both in acetonitrile and in the gas phase.  相似文献   
6.
Luminescence properties of porous anodic aluminum oxide films formed in a 0.6 M solution of citric acid and luminescence of paraterphenyl, perylene, coumarin 7, and rhodamine 6G dyes adsorbed by the films are investigated. The nature of emitting centers in anodic aluminum oxide is revealed. Intense photoluminescence of all tested dyes embedded into pores of anodic aluminum oxide has been found. A redshift of fluorescence spectra of dyes adsorbed by the matrix and emergence of an additional longwave band have been detected. Data obtained can be used in developing new thin-film luminescent coatings for future applications in optoelectronics and molecular electronics. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No 4, pp. 483–488, July–August, 1997.  相似文献   
7.
痕量铝在硝酸介质中能催化加速过氧化氢和高碘酸钾与二甲苯胺兰FF之间的褪色反应。研究了反应的最佳实验条件,建立了测定痕量铝的新方法。方法检出限为6.1×10-10gAl3+/mL,检测范围为0-1.0μgAl3+/25mL。本方法具有高灵敏度,选择性较好,操作简便,快速的特点。用以测定水样中的痕量铝,获得满意结果。  相似文献   
8.
In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH3)2AlH, a surface reaction dominated below a (CH3)2AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength.  相似文献   
9.
The chemical mechanism of the precipitation of lead titanium peroxohydroxide particles in a solution of nitrilotriacetate (NTA) complexes of lead and titanium peroxo-hydroxide is envisioned as the interaction between cations of lead hydroxide and anions of polymeric titanium peroxo-hydroxide.  相似文献   
10.
Ab initio molecular orbital calculations were carried out on epibromohydrin (EBH) and epichlorohydrin (ECH) in an attempt to elucidate their reactivity with respect to a hard nucleophile, hydroxide. These systems were modeled in both the gas phase and a polar solvent under basic conditions. In the gas phase, it was determined that a direct displacement mechanism (nucleophilic attack at the C1 position) was operative for EBH, while an indirect pathway (nucleophilic attack at the C3 position and subsequent intramolecular displacement) was followed for ECH. In an acetone solution, only the indirect displacement mechanism was found to occur. An electrostatic argument is advanced to account for this behavior in polar solution. Copyright © 2007 John Wiley & Sons, Ltd.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号