Influence of partial substitution of zinc for copper on electronic structures of YBa2Cu3O y

Summary By use of an approximate band-structure treatment based on the EHMO approach, the energy band structures for the Zn-doped superconductor YBa₂Cu_3–x Zn _x O _y were calculated in the present paper and the influence of partial substitution of zinc for copper on the electronic structures for orthorhombic YBa₂Cu₃O_y was studied. From analysis of the band structures and the densities of states for YBa₂Cu_3–x Zn _x O _y , it was demonstrated that the 2D Cu-O planes in the Y-Ba-Cu-O superconducting system have a direct and dominant influence on superconductivity, whereas the role of the 1D Cu-O ribbons and the O(4) atoms is also of some importance.     

Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition

Zn-doped AlInAs growth at high temperature, mainly at 750°C, by metalorganic chemical vapor deposition is investigated. When introducing DEZn during AlInAs growth, it is necessary to increase the TMAl flow rate in order to make the layer lattice-matched to InP. This is due to the enhanced In incorporation rather than the large covalent radius of Zn. To clarify the electrical characteristics, the dependence of the DEZn flow rate, the V/III ratio, and the growth temperature are investigated using the van der Pauw Hall method. In our growth system, a GaInAs intermediate layer is effective in preventing n-type inversion in Zn-doped AlInAs, which occurs when it is grown directly on an InP buffer layer. In addition, a large DEZn flow rate is effective for reducing carrier compensation in Zn-doped AlInAs layers grown at 750°C. Si impurities are apparently the cause of the type-inversion and compensation in Zn-doped AlInAs.     

Synthesis, crystal structure and magnetic properties of the spin ladder compounds La2(Cu1−xZnx)2O5 and La8(Cu1−xZnx)7O19

The influence of Zn-doping on the crystal structure and magnetic properties of the spin ladder compounds La₂Cu₂O₅ (4-leg) and La₈Cu₇O₁₉ (5-leg) have been investigated. The La₂(Cu_1−xZn_x)₂O₅ and La₈(Cu_1−xZn_x)₇O₁₉ solid solutions were obtained as single phases with x=0-0.1 via the solid-state reaction method in the temperature range between 1005-1010 °C and 1015-1030 °C in oxygen and air atmospheres, respectively. The lattice parameters a and c of the monoclinic crystal structures as well as the unit cell volume V increase with increasing x, while b and β decrease for both series. The magnetic susceptibilities χ of both series show a very similar behavior on temperature as well as on Zn-doping, which is supposed to be due to the similar Cu-O coordination in both La₂Cu₂O₅ and La₈Cu₇O₁₉. For low Zn-doping (x?0.04), a spin-chain like behavior is found. This quasi-one-dimensional behavior is strongly suppressed in both series for x?0.04. Here, the maximum (characteristic for spin chains) in χ(T) disappears and χ(T) decreases monotonically with increasing temperature.     

Zn-TiO2/AC复合催化剂的制备及其光催化活性

以硝酸锌、钛酸四丁酯和活性炭为原料,采用真空吸附法制备了不同组成的Zn TiO₂/AC.通过X射线衍射(XRD)和透射电镜(TEM)对催化剂进行了表征.选择较难降解的Cl₃CCOOH作为探针分子考察了其光催化活性.结果表明,掺锌能提高TiO₂/AC的催化活性,当Zn的摩尔分数为0.5%(相对TiO₂)、处理温度为400℃,溶液的pH值为6时,Zn TiO₂/AC催化剂具有很好的光催化活性.     

锌掺杂提高LiNi1/3Co1/3Mn1/3O2正极材料的电化学稳定性

通过共沉淀法与固相法相结合制备了掺锌的高稳定性Li(Ni_1/3Co_1/3Mn_1/3)_1-xZn_xO₂ (x=0, 0.02, 0.05)正极材料. 循环伏安(CV)曲线表明Zn掺杂使氧化峰与还原峰的电势差减小到0.09 V, 电化学阻抗谱(EIS)曲线表明Zn掺杂使电极的阻抗从266 Ω减小到102 Ω. Li⁺嵌入扩散系数从1.20×10^-11 cm²·s^-1增大到 2.54×10^-11 cm²·s^-1. Li(Ni_1/3Co_1/3Mn_1/3)_0.98Zn_0.02O₂正极材料以0.3C充放电在较高的截止电压(4.6 V)下比其他两种材料的电化学循环性能更稳定, 其第二周的放电比容量为176.2 mAh·g^-1, 循环100周后容量几乎没衰减; 高温(55 °C)下充放电循环100周, 其放电比容量平均每周仅衰减0.20%, 远小于其他两种正极材料(LiNi_1/3Co_1/3Mn_1/3O₂平均每周衰减0.54%; Li(Ni_1/3Co_1/3Mn_1/3)_0.95Zn_0.05O₂平均每周衰减0.38%). Li(Ni_1/3Co_1/3Mn_1/3)_0.98Zn_0.02O₂正极材料以3C充放电时其放电比容量可达142 mAh·g^-1, 高于其他两种正极材料. 电化学稳定性的提高归因于Zn掺杂后减小了电极的极化和阻抗, 增大了锂离子扩散系数.     

Structural and superconducting behaviour of Mg- and Zn-substituted YBa2Cu3O7-δ

Effects of doping YBa₂Cu₃O_7-δ with Mg and Zn on its crystallographic structure and superconducting behaviour have been investigated. Orthorhombic structure is retained upto Mg/Cu ratio of 0.12 (the highest investigated here), but T_c decreases rapidly with the level of Mg-doping. The effects produced by Mg-doping are very similar to those due to Zn-doping investigated by the present authors as well as by others. Neutron diffraction measurements have been carried out on two substituted materials: YBa₂Cu_2.82Mg_0.18O_7-δ and YBa₂Cu_2.82Zn_0.18O_7-δ. Both Mg- and Zn-dopants show strong tendency of occupying Cu(II)-sites in the unit cell. In the case of Mg-doping, however, a strikingly different feature is the concomitant depletion of oxygen at the O₃-sites by an amount nearly equal to the Mg-concentration.     

具有独特电子结构的锌掺杂SnO2介导形成氧空位实现高效稳定的光催化降解甲苯

室内家具和工业生产排放的挥发性有机化合物(VOCs)是典型的空气污染物,对环境和人类健康造成严重威胁.然而,目前广泛应用的二氧化钛(P25)光催化剂在降解VOCs,尤其是降解芳香烃的过程中,存在光催化转化率低,失活快等问题.因此,开发具有高效和稳定性的新型光催化剂来降解VOCs,并将其实际应用是重要的科学问题.SnO₂是一种稳定无毒的半导体光催化剂,但电子和空穴的复合率较高.掺杂过渡金属离子后可以提供缺陷态来抑制催化剂电子空穴对的快速复合,促进界面电荷转移.相比其他金属离子,Zn²⁺与Sn⁴⁺的离子半径非常相近,因此Zn²⁺会很容易掺杂到SnO₂晶格中.并且用Zn²⁺取代Sn⁴⁺会形成表面修饰,即形成更多的氧空位(SOVs)来补偿正电荷.氧空位的存在不仅会产生缺陷能级,而且还可以促进大量局域电子的累积.SnO₂上氧空位和Zn掺杂结构的协同作用可以弥补单一的外源离子掺杂或产生氧空位的不足.因此,本文采用一种简便的一步法合成催化剂Zn-SnO₂,即在SnO₂上同时实现Zn掺杂和形成SOVs,利用两者对SnO₂的协同作用提高电荷转移和分离效率,使其在低或高相对湿度条件下均表现出高效、稳定的光催化降解甲苯性能.采用低温固态电子顺磁共振(EPR)检测了催化剂中的氧空位,在纯SnO₂中仅检测到弱的EPR信号,而Zn-SnO₂上的EPR信号非常强,表明Zn²⁺的掺杂诱导产生了大量的氧空位.扫描电镜和透射电镜结果表明,掺杂Zn²⁺可以有效抑制SnO₂纳米粒子的晶体生长和相变,使得掺杂Zn²⁺的SnO₂粒子的粒径显著减小,从而导致SOVs含量增加,此外粒径的减小有利于增大其比表面积,增加活性吸附位点.紫外可见漫反射结果表明,Zn-SnO₂拓宽了光吸收范围,这归因于锌掺杂和氧空位的协同作用.在紫外光照射下,Zn-SnO₂的光催化降解甲苯性能优于纯SnO₂和P25,降解率达到77.5%.ESR光谱结果表明,Zn-SnO₂上的电子自旋共振信号强度均强于纯SnO₂和P25,说明Zn-SnO₂具有较好的氧化能力,也与DFT计算O₂和H₂O的吸附能结果相吻合,表明了锌掺杂和SOVs对SnO₂的协同作用可以显著提高电荷转移和分离效率.最后,通过原位红外光谱和DFT计算方法对甲苯降解的机理进行了研究.结果表明,甲苯的苯环在纯SnO₂表面倾向于在苯甲酸阶段打开,在Zn-SnO₂表面更倾向于在苯甲醛阶段选择性地开环.可见,Zn-SnO₂光催化剂缩短了甲苯的降解路径,并能显著抑制中间毒副产物产生.综上,本工作提供了一种安全,高效和可持续的降解VOCs的光催化剂.     

Impact of Zn-doping on the composition,stability, luminescence properties of silica coated all-inorganic cesium lead bromide nanocrystals and their biocompatibility

Cesium lead halide (CsPbX₃: X = I, Br, Cl) nanocrystals (NCs) are believed to be potential candidates for bioimaging applications. However, their low structural stability against polar solvents remains as a major limitation. To improve the NCs stability and maintain high emission intensity, we synthesized silica coated Zn-doped core@shell perovskite NCs via modified ligand assisted reprecipitation (LARP) synthetic method under relatively high humid condition. We systemically varied the composition inside the perovskite structure and then studied their photophysical properties and stability. Interestingly, the Zn-doping amount controls the ratio of CsPbBr₃ to Cs₄PbBr₆ perovskites inside the core and also facilitates the growth of (OA)₂PbBr₄ shell, enables overall increase in NCs emission intensity and stability. We observed green color emission from these NCs in the spectral range of 494-506 nm with a maximum photoluminescence quantum yield (PLQY) up to 88%. The optimized Zn-doped NCs exhibited nearly four times better water stability compared to the bare NCs and retain emission properties for several months even in highly polar solvents. Finally, we performed biocompatibility test of the NCs generated on biological samples and hydroponics test in a gardenia leaf for their potential bioimaging applications.     

Tuning the Intrinsic Activity and Electrochemical Surface Area of MoS2 via Tiny Zn Doping: Toward an Efficient Hydrogen Evolution Reaction (HER) Catalyst

Molybdenum sulfide (MoS₂) is considered as an alternative material for commercial platinum catalysts for electrocatalytic hydrogen evolution reaction (HER). Improving the apparent HER activity of MoS₂ to a level comparable to that of Pt is an essential premise for the commercial use of MoS₂. In this work, a Zn-doping strategy is proposed to enhance the HER performance of MoS₂. It is shown that tiny Zn doping into MoS₂ leads to the enhancement of the electrochemical surface area, increases in proportion of HER active 1T phase in the material and formation of catalytic sites of higher intrinsic activity. These benefits result in a high-performance HER electrocatalyst with a low overpotential of 190 mV(@10 mA cm⁻²) and a low Tafel slope of 58 mV dec⁻¹. The origin for the excellent electrochemical performance of the doped MoS₂ is rationalized with both experimental and theoretical investigations.