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1.
溶剂浓度对PVDF相转换膜大孔结构的影响   总被引:5,自引:0,他引:5  
提出决定大孔能否发展的初始分相点处溶剂浓度临界点的概念 ,认为初始分相点处较高的溶剂浓度有利于大孔的发展 ,溶剂浓度低于一定的界限后 ,大孔停止发展 ,转为海绵状结构 .实验考察了不同凝胶液组成下制得的PVDF中空膜的结构 ,建立了相应的传质模型 ,模拟不同制膜条件下初生态膜内的组成分布情况 ,根据初始分相点处溶剂浓度临界点的概念 ,预测膜的形态结构 .模拟结果与相应制膜条件下的电镜照片有很好的对应关系 ,证明了上述大孔形成机理的正确性 .  相似文献   
2.
Long after the first isolation of a xenon compound in 1962 the first compounds with metal‐xenon bonds are prepared. The metal atoms are so far Au and Hg. The most stable metal xenon compounds decompose under loss of xenon slightly above room temperature. They can only exist if solvents and counter ions are weaker bases than atomic xenon. Solvents and counter ions used so far are HF, (SbF6), and (Sb2F11).  相似文献   
3.
Previously unknown polyfluorocyclohexenyl, and acyclic perfluoroalkenyliodine tetrafluorides were prepared in high yields. Perfluorocyclohex-1-enyliodine tetrafluoride was obtained from pentafluoroiodobenzene using XeF2-NbF5 in aHF. The reaction of C6F5I with the weaker fluorooxidant XeF2-BF3 in 1,1,1,3,3-pentafluorobutane (PFB) yielded C6F5IF2, perfluorocyclohexa-1,4-dienyliodine difluoride, C6F5IF4, perfluorocyclohexa-1,4, and 1,3-dienyliodine tetrafluoride as intermediate products on parallel reaction routes. Both perfluoroalkenyl iodides, cis- and trans-(CF3)2CFCFCFI, reacted with XeF2-BF3 in PFB to give the corresponding perfluoroalkenyliodine tetrafluorides, cis- and trans-(CF3)2CFCFCFIF4. Even perfluoroalkyl iodides can be fluorinated by this reagent as was demonstrated by the preparation of C6F13IF4 from C6F13I. Generally, the CFCIFn fragment (n = 0, 2, or 4) in cyclic or acyclic perfluoroalkenyliodine compounds RFIFn did not undergo a transformation to the corresponding perfluoroalkyliodine compound. Furthermore, no perfluoroorganoiodine hexafluorides were detected in reactions with the fluorooxidant XeF2-aHF or BF3 or NbF5.  相似文献   
4.
活性炭纤维对氙的动态吸附性能研究   总被引:1,自引:0,他引:1  
采用动态吸附实验装置,研究了吸附温度、原料气浓度和原料气流量对活性炭纤维动态吸附氙性能的影响。结果表明:在低温条件下(≤273K),随着温度的升高,活性炭纤维对氙的平衡吸附量明显下降/同时,活性炭纤维对氙的平衡吸附量分别随着原料气浓度及原料气流量的增大而增大。  相似文献   
5.
A new class of coordination compounds of the type [Mn+(L)p](AF6)n and [Mn+(L)r](BF4)n, where M is Mg, Ca, Sr, Ba, Cd, Pb, lanthanides, A is P, As, Sb, Bi and L is XeF2, XeF4, XeF6, KrF2, was studied. A review of all known coordination compounds with L is XeF2 is given: (a) synthetic routes for the preparation of these compounds; (b) analysis of their crystal structures (molecular, dimer, chain, double chain, layer, strongly interconnected double layers and three-dimensional network); (c) the influence of the ligand XeF2 (small formula volume, linear, semi-ionic, charge of −0.5e on each F ligand); (d) the influence of the central metal ion; (e) the influence of the anions: AF6 and BF4 (the formula volume, Lewis basicity). On the basis of all properties of the metal ions, ligand and anions the obtained variety of the structures is analyzed.  相似文献   
6.
Xe(OTeF5)2 reacts with Sb(OTeF5)3 under the formation of [Xe2(OTeF5)3]+[Sb(OTeF5)6]-. From SO2ClF solution a yellow solvate [F5TeOXe]+·SO2ClF· [Sb(OTeF5)6]- is formed with the crystal data: a = 1028.1(1), b = 1040.9(1), c = 1780.2(3) pm, α = 98.07(1), β = 97.68(1), γ = 105.82(1)°, space group . The O-Xe···O fragment is essentially linear (176.1(2)°), and the two Xe-O distances are quite different 197.1(4) and 242.6(4) pm.  相似文献   
7.
The crystal structure of boron difluoride 3-phenylthiopentane-2,4-dionate was determined. The relationship between the structure and luminescent properties is traced in the series of boron difluoride acetyl acetonates (acetyl acetonate, phenylacetyl acetonate, and phenylthioacetyl acetonate). The presence of the π stacking interactions in boron difluoride phenylthioacetyl acetonate crystals leads to increased intensity and bathochromic shift of the fluorescence band.  相似文献   
8.
In this review, thin films of SiO2 on Mo(1 1 2) and MgO(1 0 0) on Mo(1 0 0) have been characterized using metastable impact electron and ultraviolet photoelectron spectroscopies (metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy). The electronic and chemical properties of the thin films are identical to those of the corresponding bulk oxides. For different prepared defective SiO2 surfaces, additional features are observed in the band-gap region. These features arise from vacancies or excess oxygen and are consistent with theoretical predictions of additional occupied states in the band-gap due to point defects. Extended defect sites on SiO2 and MgO are identified using MIES by a narrowing of the O(2p) features with a reduction in the density of extended defect sites. MIES of adsorbed Xe (MAX) is also used to estimate the density of extended defect sites. Furthermore, it is shown that CO is an appropriate probe molecule for estimating the defect density of MgO surfaces. Upon Ag exposure, the change in the work function of a low defect MgO(1 0 0) versus a high defect surface is markedly different. For a sputter-damaged MgO(1 0 0) surface, an initial decrease of the work function was found, implying that small Ag clusters on this surface are electron deficient. In contrast, for SiO2 no significant change of the work function upon Ag exposure with increasing defect density was observed. On MgO(1 0 0), the presence of defect sites markedly alter the electronic and chemical properties of supported Ag clusters. Such a strong influence of defect sites was not found for Ag clusters on SiO2.  相似文献   
9.
The results of Monte Carlo simulations of xenon monolayers deposited on graphite are presented. Systems of various surface densities and in a wide range of temperatures are investigated. The results are compared to the experimental data and to the previous results for nitrogen. The results of simulations are in good agreement with the experimental ones and confirm that melting in two dimensions is vacancy-driven. Typical real-space configurations of Xe atoms and calculated specific heat results are shown.  相似文献   
10.
利用平场光栅谱仪,分别在2和3 kPa的低气压下,测量了脉宽35 fs的圆偏振超强超短激光脉冲与5 mm长氙气体靶相互作用产生的波长在5~60 nm范围内的离子谱线。2 kPa时最强的跃迁为XeⅧ:4d105s(2S1/2)—4d95s5p(2P3/2)的17.085 6 nm线,3 kPa时最强的跃迁为11.343 nm的XeⅦ 4d105s2(1S0)—4d95s25f(3P1)跃迁。两种气压下,Xe均被电离到XeⅦ,XeⅧ,XeⅨ态。  相似文献   
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