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1.
Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.  相似文献   
2.
A novel technique of measuring a magnetic Compton profile using the grazing angle geometry against a sample surface (Grazing Incidence Magnetic Compton Profile) has been successively developed. Measurements of a magnetic moment and a magnetic Compton profile are possible for a Fe 200 nm film on a thick glass substrate. The estimated thinnest limit for measurements is 100 nm for a Fe film.  相似文献   
3.
Alkyl ketene dimer (AKD) sizing of paper involves the redistribution of the wax over the fibre surface upon heating. The two major mechanisms widely studied so far are the spreading of an autophobic precursor of molten AKD and AKD vapour transport and re-deposition on the fibre surface. All previous work assumed that the transport of AKD vapour could be expressed by the change of water contact angle with substrates that were exposed to the vapour. Information regarding the chemical composition of the vapour phase above the AKD wax has not been found in the literature. In this work, a simple method for analysing the chemical composition of the vapour is established. Our preliminary results indicated that the chemical composition of AKD vapour in the temperature range of 75–80 °C is dominantly fatty acids. This suggests that the sizing effect by actual AKD molecules via the vapour deposition mechanism is likely to be insignificant in this temperature range. This also implies that fatty acids play a positive role in AKD sizing. The chemical stability of AKD in this temperature range is also studied.  相似文献   
4.
气相渗透法广泛用于测定齐聚物和低分子量聚合物的数均分子量(M_n)。分析文献数据和本文的实验证明,仪器常数K值随溶质的分子量而变化。本文提出了一种新的说明 VPO法 K值依赖于溶质分子量的模式,根据此模式,可清楚地说明这种依赖关系。  相似文献   
5.
用差示扫描量热(DSC)研究了几种有机溶剂蒸气对聚对苯二甲酸乙二酯(PET)的作用,表明可分为反应性的和非反应性的两种。同时,对于非反应性的作用,依冷结晶峰面积的变化,又可分为三种类型:冷结晶峰面积不变,经诱导期后下降,无诱导期而迅速下降。双冷结晶峰现象在一些非反应性溶剂处理过的PET试样的DSC曲线也观察到。  相似文献   
6.
An alternative CE-ICP-MS interface based on volatile species generation (VSG) is here developed, evaluated and compared to the conventional sample introduction systems via nebulisation. For this purpose, the speciation of Cd-metallothioneins (MTs) in rabbit liver is taken as a model. Cd, bound to the different MT isoforms previously separated by CE, is transformed into volatile species at the exit of the capillary and on-line detected by ICP-MS. Optimum conditions for Cd VSG have been investigated in a flow injection device, using NaBH4 as hydrogenation reagent in a HCl medium containing cobalt and thiourea as catalysts. Sample volume injected, CE separation voltage and reagents flows have been optimised. Analytical performance characteristics of the CE-VSG-ICP-(Q)MS coupling developed were evaluated, in terms of repeatability and linearity of response, using standard rabbit liver metallothionein isoforms (MT1 and MT2). Detection limits for Cd-MTs turned out to be almost one order of magnitude better than those derived from using a conventional Babington nebuliser-based interface. Compared to a MicroMist-based interface detection limits resulted to be similar, but the observed peak height was eight times higher using the VSG interface, indicating the enhanced analyte transport efficiency derived from VSG sample introduction systems.  相似文献   
7.
The hydrogen absorption of the phase Ti64Co32–x Fe x (x=0...16) and its influence on the magnetic properties have been investigated. Measurements of the vapour-pressure, wide-line NMR and magnetic susceptibility have been performed. Substitution of Co by Fe does not change the amount of absorbed hydrogen. However the reaction rate of hydriding process, the activation energy of diffusion and the magnetic quantities change upon this substitution.
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8.
A fast procedure has been developed for the direct determination of paint solvents. The method is based on the injection of small volumes of untreated solvent mixtures into a heated Pyrex glass reactor in which the sample is volatilized and introduced by means of a flow of nitrogen into an IR multiple pass gas cell and the spectrum in the mid-IR region is registered as a function of time. Data found for samples are interpolated in calibration graphs obtained by injecting different volumes of pure compounds which constitute the solvent mixture. A methylisobutylketone (MIBK) toluene mixture was used as test system to develop the proposed procedure. The method provides a limit of detection of the order of 1–4 μg, a relative standard deviation of the order of 0.4 to 2% for five independent measurements, and recovery percentage values from 99.8 till 103.6 %. A commercial sample of polyurethane paint solvent has been analysed by the developed procedure.  相似文献   
9.
Size-dependent thermodynamic parameters, such as Gibbs free energy, enthalpy and entropy, for the transition of a Ni nanofilm to catalyst particles for subsequent carbon nanotube growth have been explored. In this investigation, we consider the derived equations of the size-dependent melting temperature of nanosolids based on our previous works. Using this thermodynamic approach, it is found that the diameter of Ni particles is 3 times greater than the thickness of the original film. From the critical and stable sizes of transformed Ni nanoparticles, a minimum film thickness for transformation of film to nanoparticles was obtained. Our predictions are in good agreement with experimental results.  相似文献   
10.
The threshold voltage is a key parameter in the silicon MOSFETS design and operation. In this paper, we study the factors that contribute to the changes of threshold voltage of thin-film LPCVD polysilicon transistors when varying the thickness of the active layer.The results show that the threshold voltage depends strongly on the film thickness. For high thicknesses, the threshold voltage is shown to be determined by the trapped holes at grain boundaries. The variation of this parameter with film thickness can be attributed to inter-granular trap states density variation in the film.For low thicknesses, a simple electrostatic model of the study structure, associated with a numerical method of solving 2D-Poisson's equations, shows that the changes of threshold voltage of polysilicon TFT depends on grain-boundary properties and charge-coupling between the front and back gates. Based on this consideration, the usual threshold voltage expression is modified. The results so obtained are compared with the available experimental data, which show a satisfactory match thus justifying the validity of the proposed relation.  相似文献   
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