爆磁压缩发生器通过脉冲变压器对脉冲形成线充电的理论分析

 将爆磁压缩等效为电流源的方法，对爆磁压缩发生器通过脉冲变压器对脉冲形成线充电进行了理论分析，得出爆磁压缩发生器在负载上产生电流波形（简称负载电流）为直线情况和任意电流波形情况下充电电流和充电电压的表达式。分析表明变压器耦合互感与负载电流随时间变化增长率是脉冲形成线充电的两个重要参数，脉冲形成线第一个充电电压峰值与变压器的耦合互感和负载电流波形斜率成正比，负载电流波形斜率的变化可以改变充电电压峰值的时间，斜率不断增加可以延长第一个充电电压峰值时间，从而可能增加充电电压的幅值，提高爆磁压缩发生器能量的利用效率。     

横向射流式单重态氧发生器的性能实验研究

 对氧碘化学激光器的单重态氧发生器（SOG）进行了改进，采用横向射流方式，并对该横向射流式单重态氧发生器的性能进行了检测。实验中过氧化氢碱溶液温度控制在－16℃左右,氯气流量为530mmol/s，He与氯气的流量比为3;采用PS法测量单重态氧分子的产率,吸收法测量氯气的利用率和相对水含量。得出如下结论:在不使用冷阱和分离器的情况下，最高单重态氧分子产率达到58%, 氯气利用率在80%以上,相对水含量小于等于0.5;气体达到最大流量时,发生器仍然能稳定地工作。     

用于ψ＇→γ＇xcJ→γ＇γJ/ψ过程中多极分析的产生子

为了实验研究粲偶素ψ＇级联衰变过程ψ＇→γ＇xcJ→γ＇γJ/ψ,一个用于正确描述全部末态角分布的产生子是必要的．可以通过分析角分布的关联来确定这一过程的多极展开参数（或者等效的螺旋度振幅），而从中可以知道高阶电磁多极矩和相对论修正的贡献，同时可以检验ψ＇是不是ψ＇（2S）和ψ＇（1D）的混合．介绍了一个能完全描述这一过程的角分布的产生子，同时讨论了测量多极参数的测量方法．这些都可以被用在BESⅢ或者CLEOc的分析当中．     

On the Linear Complexity Profile of Nonlinear Congruential Pseudorandom Number Generators with Dickson Polynomials

Linear complexity and linear complexity profile are important characteristics of a sequence for applications in cryptography and Monte-Carlo methods. The nonlinear congruential method is an attractive alternative to the classical linear congruential method for pseudorandom number generation. Recently, a weak lower bound on the linear complexity profile of a general nonlinear congruential pseudorandom number generator was proven by Gutierrez, Shparlinski and the first author. For most nonlinear generators a much stronger lower bound is expected. Here, we obtain a much stronger lower bound on the linear complexity profile of nonlinear congruential pseudorandom number generators with Dickson polynomials.     

影响DPF焦点装置中子稳定性的因素和改进措施

简要叙述了稠密等离子体聚焦装置作为中子发生器的工作原理，对影响稠密等离子体聚焦装置放电出中子产额及其稳定性的一些因素和改进措施进行了简单讨论．通过使用不同电极形状的场畸变开关很好地提高了焦点装置的运行，使装置输出中子的起伏得到明显的改善．通过对腔内电极的清洁，在不更换气体的条件下，聚焦装置放电出中子产额稳定.The principle of dense plasma focus(DPF) as neutron generator has been investigated in this paper. We have stated briefly some factors that mainly influnce the DPF s neutron yield and some methods improving the stability of neutron yields on the dense plasma focus. It is showed that the fluctuation of DPF output neutron becomes smaller by using different types of field-distortion elements. Over 100 consecutive shots without purging the test gas the neutron yields has no obvious change.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

Low-threshold, high-efficiency, high-repetition-rate optical parametric generator based on periodically poled LiNbO3

We report a high-repetition-rate optical parametric generator (OPG) with a periodically poled lithium niobate (PPLN) crystal pumped by an acousto-optically Q-switched CW-diode-end-pumped Nd:YVO_4 laser. For the maximum 1064nm pump power of 970mW, the maximum conversion efficiency is 32.9% under the conditions of 250℃, 1064nm pulse repetition rate of 22.6kHz and pulse width of 12ns, and the PPLN OPG threshold in the collinear case is less than 23.7μJ. The output power increases with the increase of the crystal temperature. The 1485－1553nm signal wave and 3383－3754nm idler wave are obtained by changing the temperature and the angle of the PPLN crystal.