Colloidal ZnO nanostructures and functional coatings: A survey

The past research work devoted to ZnO nanocolloidal sol-gel route is reviewed. It highlights the cluster chemistry of alcoholic ZnAc₂ solutions and the results of ZnO colloid growth investigations performed worldwide. Moreover, the role of doping and co-doping in the processing of functional ZnO coatings is discussed. The possibilities of tuning the optical properties are also reported with a particular attention to luminescence. The last part of this paper deals with electrical and photoelectrochemical properties of ZnO nanocrystals and their aggregates. This contribution is dedicated to the 80th birthday of Prof. Arnim Henglein from the Hahn-Meitner-Institut in Berlin and to the memory of Prof. Jacques Mugnier from the Université Claude-Bernard Lyon 1 in France.     

ns脉冲激光对K9玻璃的破坏实验

 采用高速PIN光电探测器和高带宽的数字存储示波器，实时检测透射光脉冲和散射光脉冲的变化特征，并将之用作材料破坏的光学判据，测量得到K9玻璃在1.06μm纳秒脉冲激光作用下的能量损伤阈值约18mJ，相应的能量密度阈值为1.0kJ/cm²。通过分析透射光脉冲和散射光脉冲的特征，给出了材料的破坏时刻，并推断出K9玻璃所能承受的极限光强为10¹⁵W/m²。研究了能量透过率与泵浦能量的关系，并初步探讨了透明材料的破坏机理。结果表明：在多纵模激光的作用下，透明光学材料破坏是电离击穿与自聚焦效应综合作用的结果。     

Transparent carbon nanotube coatings

Thin networks of carbon nanotubes (CNTs) are sprayed onto glass or plastic substrates in order to obtain conductive transparent coatings. Transparency and conductivity at room temperature of different CNT material are evaluated. CNT coatings maintain their properties under mechanical stress, even after folding the substrate. At a transparency of 90% for visible light we observe a surface resistivity of 1 kΩ/sq which is already a promising value for various applications.     

The surface and materials science of tin oxide

The study of tin oxide is motivated by its applications as a solid state gas sensor material, oxidation catalyst, and transparent conductor. This review describes the physical and chemical properties that make tin oxide a suitable material for these purposes. The emphasis is on surface science studies of single crystal surfaces, but selected studies on powder and polycrystalline films are also incorporated in order to provide connecting points between surface science studies with the broader field of materials science of tin oxide. The key for understanding many aspects of SnO₂ surface properties is the dual valency of Sn. The dual valency facilitates a reversible transformation of the surface composition from stoichiometric surfaces with Sn⁴⁺ surface cations into a reduced surface with Sn²⁺ surface cations depending on the oxygen chemical potential of the system. Reduction of the surface modifies the surface electronic structure by formation of Sn 5s derived surface states that lie deep within the band gap and also cause a lowering of the work function. The gas sensing mechanism appears, however, only to be indirectly influenced by the surface composition of SnO₂. Critical for triggering a gas response are not the lattice oxygen concentration but chemisorbed (or ionosorbed) oxygen and other molecules with a net electric charge. Band bending induced by charged molecules cause the increase or decrease in surface conductivity responsible for the gas response signal. In most applications tin oxide is modified by additives to either increase the charge carrier concentration by donor atoms, or to increase the gas sensitivity or the catalytic activity by metal additives. Some of the basic concepts by which additives modify the gas sensing and catalytic properties of SnO₂ are discussed and the few surface science studies of doped SnO₂ are reviewed. Epitaxial SnO₂ films may facilitate the surface science studies of doped films in the future. To this end film growth on titania, alumina, and Pt(1 1 1) is reviewed. Thin films on alumina also make promising test systems for probing gas sensing behavior. Molecular adsorption and reaction studies on SnO₂ surfaces have been hampered by the challenges of preparing well-characterized surfaces. Nevertheless some experimental and theoretical studies have been performed and are reviewed. Of particular interest in these studies was the influence of the surface composition on its chemical properties. Finally, the variety of recently synthesized tin oxide nanoscopic materials is summarized.     

碳纳米管透明导电薄膜的可控制备

碳纳米管具有优秀的导电性能、 透光性能和十分突出的柔性, 在柔性透明导电薄膜中有着良好的应用前景. 如何制备同时拥有良好导电性能和透光性能的碳纳米管薄膜是这一领域研究的核心问题. 本综述介绍了碳纳米管薄膜的制备方法, 并重点讨论了基于漂浮催化剂化学气相沉积法的碳纳米管薄膜的可控制备. 在生长过程中限制碳纳米管的团聚、 增加碳纳米管的长度、 降低杂质的含量是提高碳纳米管薄膜性能的主要策略.     

石墨烯玻璃透明薄膜加热特性

Graphene has become a research focus in recent years owing to its excellent characteristics, and glass is a commonly used material with high transparency and low cost. Graphene glass combines the excellent properties of both graphene and glass; graphene glass has not only high thermal conductivity, high electrical conductivity, and good surface hydrophobicity but also exhibits superior electrothermal conversion and wide-spectrum high-light-transmittance characteristics. Therefore, the study of graphene glass films is of theoretical value and practical significance. In this study, a high-purity glass-based (JGS1 quartz glass) multilayer graphene film was developed based on an atmospheric-pressure chemical vapor deposition (APCVD) method, and its electrical characteristics, light transmittance, and electrical heating characteristics were experimentally investigated in detail. The results show that graphene glass with different surface resistance values obtained through direct growth on a high-purity quartz glass substrate using the APCVD method, not only has excellent uniformity and quality, but also has considerably flat and high transmittance across the entire visible light region and exhibits excellent heating performance and fast response time. For graphene glass with a surface resistance of 1500 Ω·sq^-1, the light transmittance can reach 74%, and the saturation temperature can rise to 185 ℃ by applying a bias voltage of 40 V. In addition, when the resistance value of the graphene glass is 420 Ω·sq^-1, the graphene glass reaches a high saturation temperature of 325 ℃ in 40 s, and the corresponding heating rate can exceed 18 ℃·s^-1, achieving a significantly higher heating rate than other heating films at the same voltage. Compared with the polyethylene-terephthalate- (PET-) based and silicon-based graphene films obtained by the transfer, graphene glass has a higher saturation temperature, shorter thermal response time, and faster heating rate. Furthermore, graphene glass exhibits better heating cycle stability and longer-term heating stability at a constant voltage. In addition, an experiment using the graphene glass to thermally tune the wavelength of a vertical-cavity surface-emitting laser was conducted and gave good results. The position of the laser peak controlled by the graphene glass was red-shifted by 1.78 nm by applying a voltage of 20 V, and the wavelength tuning efficiency reached 0.059 nm·℃^-1. Compared with PET-based and silicon-based graphene films, the actual electrical heating capacity of graphene glass increased by 195%. These experimental findings demonstrate that graphene glass transparent films with excellent electric heating characteristics can be used in various transparent electric heating fields and have relatively wide application prospects.     

Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

ITO-free inverted organic solar cells fabricated with transparent and low resistance ZnO/Ag/ZnO multilayer electrode

Inverted organic solar cells (OSCs) based on poly (3-hexylthiophene) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ) were fabricated with optimized ZnO/Ag/ZnO multilayer and conventional indium–tin oxide (ITO) cathode electrodes and their performance was compared. The ZnO/Ag/ZnO multilayer films showed sheet resistances in the range 3.6–3.9 Ω/sq, while ITO exhibited 14.2 Ω/sq. On the one hand, the carrier concentration gradually decreased from 1.74 × 10²² to 4.33 × 10²¹ cm⁻³ as the ZnO thickness increased from 8 to 80 nm, respectively. The transmittance of the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) films was ∼95% at 550 nm, which is comparable to that of ITO (∼96%). The multilayer films were smooth with a root mean square (RMS) roughness of 0.81 nm. OSCs fabricated with the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) film showed a power conversion efficiency (2.63%) comparable to that of OSCs with a conventional ITO cathode (2.71%).     

Microstructure evolution of room-temperature-sputtered ITO films suitable for silicon heterojunction solar cells

Thickness influence on structural, optical and electrical properties of sputtered indium tin oxide (ITO) with thickness ranging from 60 up to 430 nm films has been studied. At the increase of the film thickness crystallinity degree and grain size increased, whereas tensile structural distortion as well as resistivity decreased. It was observed that a microstructure evolution takes place: the initial amorphous layer evolved in polycrystalline phase, with a grain–subgrain surface morphology. Carrier concentration increased at the increase of the film thickness and a general relationship between electrical characteristics and structural distortion has been found. In thinner films larger tensile distortion allowed to include larger amount of interstitial O and/or Sn atoms in the lattice. An appreciable impact of the thickness was also observed on electro-optical properties in terms of changes in energy gap, resistivity and optical absorption. Silicon heterojunction solar cells have been produced and J_sc as high as 33.0 mA/cm² has been obtained.     

高效透明导电膜荧光屏的研究

介绍了一种新型荧光屏结构,采用透明导电膜代替传统荧光屏中的铝膜作电极.分别测试了新型荧光屏和传统荧光屏的加电特性.实验结果表明新型荧光屏具有较高的耐压性能,对提高X射线变像管的空间分辨率有重要作用,而且能延长变像管的寿命.采用透明导电膜制作荧光屏还具有工艺简单,成本低和成品率高的优点.