The temperature-composition phase diagram of the HgTe?HgI2 pseudobinary system on the HgTe rich side

The temperature-composition phase diagram of the HgTe? HgI₂ system was determined from 0 to 45 Mol-% HgI₂ between 25 and 670°C using Debye-Scherrer powder X-ray diffraction techniques and differential thermal analysis. Solid solutions of HgTe and HgI₂ with the cubic, zinc blende-type structure exist above 300°C, having a maximum solubility of 11.7 ± 0.8 Mol-% HgI₂ in HgTe at 501 ± 5°C. The known monoclinic compound Hg₃Te₂I₂ is formed by a peritectic reaction upon cooling at 501 ± 5°C, with the peritectic point at approximately 37 ± 4 Mol-% HgI₂.     

High-Pressure Raman Study of Zincblende,Cinnabar, and Cmcm Phases Of ZnTe

Raman measurements of ZnTe have been performed at pressures up to 15 GPa. Frequencies, line widths, and intensities of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) were studied in detail. In this note, we focus on the Raman spectra of the high-pressure cinnabar and Cmcm phases. In the transition regime from cinnabar to Cmcm (12.2 to 13.7 GPa) the Raman data indicate the possible existence of a new intermediate high-pressure phase.     

Influence of gold nanoparticles on optically stimulated effects in TeO2-ZnO and GeO2-PbO amorphous thin films

We have found photoinduced second harmonic generation at wavelength 1064 nm during bicolor Nd:YAG laser coherent treatment of TeO₂-ZnO and GeO₂-PbO amorphous films. The maximally achieved second order susceptibility was equal to about 1.02 pm/V. Correlation of the induced second order susceptibility with local sample heating and induced birefringence may indicate an occurrence of local phase transitions from amorphous glass-like phase to non-centrosymmetry metastable phases.     

An Aluminum Telluride with a Terminal Al=Te Bond and its Conversion to an Aluminum Tellurocarbonate by CO2 Reduction

Facile access to dimeric heavier aluminum chalcogenides [(NHC)Al(Tipp)-μ-Ch]₂ (NHC=IiPr (1,3-diisopropyl-4,5-dimethylimidazol-2-ylidene, IMe₄ (1,3,4,5-tetramethylimidazol-2-ylidene); Tipp=2,4,6-iPr₃C₆H₂; Ch=Se, Te) by treatment of NHC-stabilized aluminum dihydrides with elemental Se and Te is reported. The higher affinity of IMe₄ in comparison with IiPr toward the Al center in [(NHC)Al(Tipp)-μ-Ch]₂ can be used for ligand exchange. Additionally, the presence of excess IMe₄ allows for cleavage of the dimers to form a rare example of a neutral multiply bonded heavier aluminum chalcogenide in the form of a tetracoordinate aluminum complex, (IMe₄)₂(Tipp)Al=Te. This species reacts with three equivalents of CO₂ across two Al−C^NHC and the Al=Te bond affording a pentacoordinate aluminum complex containing a dianionic tellurocarbonate ligand [CO₂Te]²⁻, which is the first example of tellurium analogue of a carbonate [CO₃]²⁻.     

Thermally-Induced Isomerization of Prenucleation Clusters During the Prenucleation Stage of CdTe Quantum Dots

The evolution of prenucleation clusters in the prenucleation stage of colloidal semiconductor quantum dots (QDs) has remained unexplored. With CdTe as a model system, we show that substances form and isomerize prior to the nucleation and growth of QDs. Called precursor compounds (PCs), the prenucleation clusters are relatively optically transparent and can transform to absorbing magic-size clusters (MSCs). When a prenucleation-stage sample at 25, 45, or 80 °C is dispersed in a mixture of cyclohexane (CH) and octylamine (OTA) at room temperature, either MSC-371, MSC-417, or MSC-448 evolves with absorption peaking at 371, 417, or 448 nm, respectively. We propose that PC-371 forms at 25 °C, and isomerizes to PC-417 at 45 °C and to PC-448 at 80 °C. The PCs and MSCs are quasi isomers. Relatively large and small amounts of OTA favor PC-371 and PC-448 in dispersion, respectively. The present findings suggest the existence of PC-to-PC isomerization in the QD prenucleation stage.     

Untersuchung der Phasenbeziehungen in quaternären Systemen Bi2O3/Bi2Ch/Bi2Ch (Ch = S,Se, Te)

Investigations of the Phase Relations in the Quaternary Systems Bi₂O₃/Bi₂Ch /Bi₂Ch (Ch = S, Se, Te) The stability ranges in the pseudobinary systems Bi₂O₂S/Bi₂O₂Se, Bi₂O₂S/Bi₂O₂Te and Bi₂O₂Se/Bi₂O₂Te have been studied by solid state and chemical transport reactions. A complete mixed crystal Bi₂O₂(Te_xSe_1–x), 0 ≤ x ≤ 1 exists between the ternary compounds Bi₂O₂Te and Bi₂O₂Se. The thermal behaviour of the mixed crystal and the coexistence ranges have been determined by x‐ray and thermal analysis.     

Te NMR chemical shifts and tellurium coordination environments in crystals and glasses in the Ge-As-Sb-Te system

The local coordination environments of Te atoms have been investigated in crystalline and glassy binary and ternary tellurides in the system Ge-As-Sb-Te using ¹²⁵Te solid-state wideline nuclear magnetic resonance (NMR) spectroscopy. The average ¹²⁵Te NMR chemical shifts in these materials range from 300 to 1050, 90 to 700 and − 2000 to − 4100 ppm for 2, 3 and 6-coordinated environments, respectively. Te atoms are predominantly 2-coordinated in binary Ge-Te, As-Te and ternary Ge-As-Te glasses. The ¹²⁵Te NMR spectrum of the cubic Ge₁Sb₂Te₄ phase with rock salt structure is consistent with a random distribution of Ge/Sb vacancies in the lattice. Besides the coordination number, the ¹²⁵Te chemical shifts in these materials are also found to be sensitive to the chemical identity of the nearest neighbors. ¹²⁵Te NMR spectroscopy shows significant future promise in its application as a technique complementary to diffraction and EXAFS in understanding the short-range structure of amorphous Ge-As-Sb tellurides.     

Synthesis of selenium- and tellurium-containing nucleosides derived from uridine

The synthesis of selenium- and tellurium-containing nucleosides, derived from uridine is described herein. These compounds were prepared in a concise and short synthetic route in good yields, by nucleophilic substitution of a tosylate group by organoselenium nucleophiles.     

近距离升华制备大晶粒CdTe掺Sb薄膜的结构性能研究

采用近距离升华(Co lse-Spaced-Sub lim ation,CSS)技术制备纯CdT e薄膜.然后通过离子注入的方法对纯CdT e薄膜进行Sb(锑)掺杂及热处理,并利用XRD、SEM、紫外可见分光光度计及H a ll测试系统研究其结构,表面形貌和光电性能.结果表明,通过离子注入的方法在纯CdT e薄膜上掺杂Sb离子可以改善CdT e薄膜的结晶性能、并且明显提高了其电导特性,掺杂对CdT e薄膜的光能隙影响不大.     

Crystal structure, electronic structure and physical properties of the new low-valent thallium silicon telluride Tl6Si2Te6 in comparison to Tl6Ge2Te6

The title compounds were prepared from the elements in the stoichiometric ratio at 800 °C under exclusion of air. Tl₆Si₂Te₆ crystallizes in the space group P1¯, isostructural with Tl₆Ge₂Te₆, with , , , α=89.158(2)°, β=96.544(2)°, γ=100.685(2)°, (Z=2). Its structure is composed of dimeric [Si₂Te₆]⁶⁻ units with a Si-Si single bond, while the Tl atoms are irregularly coordinated by five to six Te atoms. Numerous weakly bonding Tl-Tl contacts exist. Both title compounds are black semiconductors with small band gaps, calculated to be 0.9 eV for Tl₆Si₂Te₆ and 0.5 eV for Tl₆Ge₂Te₆. The Seebeck coefficients are +65 μV K⁻¹ in case of Tl₆Si₂Te₆ and +150 μV K⁻¹ in case of Tl₆Ge₂Te₆ at 300 K, and the electrical conductivities are 5.5 and 3 Ω⁻¹ cm⁻¹, respectively.