4-carboxy-1,2-cyclohexanedionedioxime complexes of nickel(ii) in alkaline media

The reactions of 4-carboxy-1,2-cyclohexanedionedioxime and nickel(II) were studied in alkaline media. Spectrophotometric studies indicate the presence of a 1:1 complex ion, NiD^-. Magnetic susceptibility measurements on a series of solutions of varying ratios of vic-dioxime and nickel(II) showed that the 1:1 complex ion was diamagnetic and that two paramagnetic complexes, probably NiD₂^4- and NiD₃^7-, are present in solution. The stability constants for the three complexes were calculated from spectrophotometric and magnetic susceptibility data. The log K values were found to be log K₁ = 28.74 ± 0.60, log K₂ = 0.76 ± 0.15, and log K₃ = 3.67 ± 0.73, respectively.     

Quantification of several atmospheric gases from high resolution infrared solar spectra obtained at the south pole in 1980 and 1986

Simultaneous total column amounts of a number of minor and trace atmospheric gases above the South Pole in December 1980 and December 1986 have been deduced from analysis of high resolution solar absorption spectra recorded (by F. J. M. and F. H. M.) from Amundsen-Scott South Pole Station. These spectra also contain some limited information on the vertical profiles of the observed atmospheric gases.The data sets were recorded with a Bomem Michelson-type interferometer and analyzed with a spectral least-squares fitting procedure, utilizing the best available spectroscopic line parameters and absorption cross sections. Because the same instrument, line parameters, and analysis method have been used in analyzing the December 1980 and December 1986 data sets, the precision in comparing the column amounts from these two dates is rather high, about 10–20% for the stronger absorbing gases. For this reason, it has been possible to quantify or determine upper limits for differences between the December 1980 and December 1986 total column amounts, of a number of atmospheric gases including O₃, N₂O, HNO₃, CO₂, CH₄, and CF₂C_{1 2} (CFC 12). In addition, vertical column amounts for a number of atmospheric gases covered only in the December 1986 observations have been derived, including HC1, NO, NO₂, and C₂H₆. Some of these results will be discussed here. The HC1 measurements are especially interesting since the observed amounts are higher than expected from observations made at lower latitudes in the northern and southern hemispheres.     

Human Y‐chromosome SNP characterization by multiplex amplified product‐length polymorphism analysis

We designed an allele‐specific amplification protocol to optimize Y‐chromosome SNP typing, which is an unavoidable step for defining the phylogenetic status of paternal lineages. It allows the simultaneous highly specific definition of up to six mutations in a single reaction by amplification fragment length polymorphism (AFLP) without the need of specialized equipment, at a considerably lower cost than that based on single‐base primer extension (SNaPshot?) technology or PCR‐RFLP systems, requiring as little as 0.5 ng DNA and compatible with the small fragments characteristic of low‐quality DNA. By designation of two primers recognizing the derived and ancestral state for each SNP, which can be differentiated by size by the addition of a noncomplementary nucleotide tail, we could define major Y clades E, F, K, R, Q, and subhaplogroups R1, R1a, R1b, R1b1b, R1b1c, J1, J2, G1, G2, I1, Q1a3, and Q1a3a1 through amplification fragments that ranged between 60 and 158bp.     

Quality Related Safety Evaluation of a South African Traditional Formulation (PHELA®) as Novel Anti-Biofilm Candidate

A South African traditional formulation, PHELA^®, is consumed by the traditional people for severe chest problems with coughing, diarrhea, oral ulcers etc. The present study focused on establishing the anti-infective properties of a safe and standardized poly-herbal formulation through a series of criteria and specifications.     

Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics

This paper describes the structural properties and electrical characteristics of thin Dy₂O₃ dielectrics deposited on silicon substrates by means of reactive sputtering. The structural and morphological features of these films after postdeposition annealing were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Dy₂O₃ dielectrics annealed at 700 °C exhibit a thinner capacitance equivalent thickness and better electrical properties, including the interface trap density and the hysteresis in the capacitance-voltage curves. Under constant current stress, the Weibull slope of the charge-to-breakdown of the 700 °C-annealed films is about 1.6. These results are attributed to the formation of well-crystallized Dy₂O₃ structure and the reduction of the interfacial SiO₂ layer.     

Potassium Ion-Selective Field-Effect Transistor (ISFET) Sensors: Studies on Gate Dimensions and Ion-Implantation Levels

Abstract

Silicon nitride membrane ISFET sensor chips have been produced with varying gate dimensions. A series of width/length (W/L) aspect ratios have been examined, combined with three levels of boron ion-implant. The level of ion-implantation affects the threshold voltage; this is important as a low threshold voltage allows the use of low noise operating conditions. Gate dimensions are also important factors for they determine the level of drain current for a given gate and drain voltages. A novel design feature, aimed at achieving wide gates, is the use of folded gates as well as having a straight structure. The evaluation of devices with gates covered with poly(vinyl chloride) (PVC)-valinomycin-dioctyl adipate was based on their response to potassium chloride standards when it was shown that there may be a maximum width of gate above which there is no improvement of response. Also, the effect of folding the gate structure is discussed and shown to be tenable, thus permitting greater miniaturisation.     

A study of lanthanide p-toluene sulphonic acid complexes in solution

Lanthanide p-toluene sulphonic acid (ptsa) complexes were prepared for La, Pr, Nd, Sm, Eu, Dy, Ho, Er and Yb, and found to exist as Ln(ptsa)₃. Conductivity studies of La(ptsa)₃ in DMSO and DMF suggest 1:2 and, possibly, 1:1 electrolyte behaviour in these solvents, respectively. NMR lanthanide-induced chemical shifts (LIS) for aromatic protons in (ptsa)^? and methyl protons in DMSO, were measured for all complexes as a function of the [Ln³⁺[DMSO] in a medium consisting of CCl₄, DMSO, and CH₃CN. Analysis of the LIS data suggests a change in (ptsa)^? coordination round Ln₃₊ across the lanthanide series.     

Quantitative SIMS depth profiling of diffusion barrier gate-oxynitride structures in TFT-LCDs

Gate oxynitride structures of TFT-LCDs were investigated by SIMS, and successful solutions are demonstrated to overcome difficulties arising due to the charging effects of the multilayer systems, the matrix effect of the method, and the small pattern sizes of the samples. Because of the excellent reproducibility achieved by applying exponential relative sensitivity functions for quantitative analysis, minor differences in the barrier gate-oxynitride composition deposited on molybdenum capped aluminium-neodymium metallisation electrodes were determined between the centre and the edge of the TFT-LCD substrates. No differences were found for molybdenum-tungsten metallisations. Furthermore, at the edge of the glass substrates, aluminium, neodymium, and molybdenum SIMS depth profiles show an exponential trend. With TEM micrographs an inhomogeneous thickness of the molybdenum capping is revealed as the source of this effect, which influences the electrical behaviour of the device.The production process was improved after these results and the aging behaviour of TFT-LCDs was investigated in order to explain the change in control voltage occurring during the lifetime of the displays. SIMS and TEM show an enrichment of neodymium at the interface to the molybdenum layer, confirming good diffusion protection of the molybdenum barrier during accelerated aging. The reason for the shift of the control voltage was finally located by semi-quantitative depth profiling of the sodium diffusion originating from the glass substrate. Molybdenum-tungsten was a much better buffer for the highly-mobile charge carriers than aluminium-neodymium. Best results were achieved with PVD silicon oxynitride as diffusion barrier and gate insulator deposited on aluminium-neodymium metallisation layers.     

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

LaAlO₃ (LAO) is explored in this work to replace SiO₂ as the gate dielectric material in metal–oxide–semiconductor field effect transistor. Amorphous LAO gate dielectric films were deposited on Si (0 0 1) substrates by low pressure metalorganic chemical vapor deposition using La(dpm)₃ and Al(acac)₃ sources. The effect of processing parameters such as deposition temperature and precursor vapor flux on growth, structure, morphology, and composition of LAO films has been investigated by various analytical methods deeply. The film growth mechanism on Si is reaction limiting instead of mass transport control. The reaction is thermally activated with activation energy of 37 kJ/mol. In the initial growth stage, Al element is deficient due to higher nucleation barrier on Si. The LAO films show a smooth surface and good thermal stability and remain amorphous up to a high temperature of 850 °C. The electrical properties of amorphous LAO ultrathin films on Si have also been evaluated, indicating LAO is suitable for high k gate dielectric applications.     

Aminocalix[4]arene: the effect of pH on the dynamics of gate and portals on the hydrophobic cavity

The pH of a solution shows a significant effect on the dynamics of the gate (formed by eight benzylic functions) and portal on the hydrophobic cavity of receptor. At pH 5.8 the gate closes and prohibits the entry of anionic guests. However, at pH 7.3 the gate opens and allows the entry of anionic guests into the hydrophobic cavity. It is the first time that anionic receptor efficiently recognizes anionic guests.