惯性约束中子测温的误差研究

综合分析了ＩＣＦ（惯性约束）中子测温系统的误差与其参数的关系，这些参数包括靶核温度，探测的中子数、靶到探测器的距离、探测器的响应函数以及闪烁体厚度等，考虑到中子与探测器的相互作用，探测器的响应与靶的烧蚀过程，在此基础上提出了新的统计误差计算方法，该方法对于改善中子测温的相对误差并应用于闪烁体的设计具有重要意义。     

快中子照相中的点扩展函数计算

 快中子照相中，基于反冲核原理探测快中子的有机闪烁体平板是普遍采用的快中子辐射转换体。模拟了D-T中子垂直入射BC400闪烁体平板，计算了不同厚度平板闪烁体的点扩展函数，对14.1 MeV快中子照相中闪烁体固有分辨率随厚度的变化进行了研究。计算结果表明，在不考虑二次中子与闪烁体作用及背景噪声等情况时，点扩展函数几乎不依赖于闪烁体厚度。同时，计算还表明在一定的分辨率范围内，由于荧光收集效率的限制，闪烁体厚度增加并不会改善图像对比度。     

Influence of the light illumination on thermoluminescence properties of PbWO4

The thermally stimulated properties of PbWO₄ in the temperature range 90–400 K have been investigated on undoped and terbium-doped crystals after X-ray irradiation at 90 K. Doping with terbium changes the concentration of shallow traps, which are responsible for retrapping free electrons and holes. Light illumination can change the distribution of the traps. The optically stimulated luminescence is observed. The influence of light illumination on the TSL curves and emission properties is studied. The possible mechanism of TSL phototransformation is discussed.     

Preparation of Zn(Cd)O:Ga–SiO2 composite scintillating materials

Composite material consisting of highly luminescent Zn(Cd)O:Ga powder embedded in the silica matrix was prepared. It was found out that ZnO:Ga with less developed crystals (i.e. annealed at lower temperatures) is more prone to interact with the SiO₂ matrix and form zinc silicates, which in turn resulted in the decrease in the excitonic emission. Pre-annealing of the powders at temperatures above 600 °C prevented the interaction with the SiO₂ matrix. ZnO:Ga with well-developed crystals at such a high temperatures was not affected by the matrix and retained its properties, i.e. high radioluminescence intensity and ultrafast sub nanosecond photoluminescence decay. Introducing Cd into the ZnO lattice caused observable red shift in the excitonic luminescence, without negatively affecting the total intensity or the decay.     

Scintillation and optical stimulated luminescence of Ce-doped CaF2

Scintillation and optical stimulated luminescence of Ce 0.1–20% doped CaF₂ crystals prepared by Tokuyama Corp. were investigated. In X-ray induced scintillation spectra, luminescence due to Ce³⁺ 5d–4f transition appeared around 320 nm with typically 40 ns decay time. By ²⁴¹Am 5.5 MeV α-ray irradiation, 0.1% doped one showed the highest scintillation light yield and the light yield monotonically decreased with Ce concentrations. Optically stimulated luminescence after X-ray irradiation was observed around 320 nm under 550 or 830 nm stimulation in all samples. As a result, intensities of optically stimulated luminescence were proportional to Ce concentrations. Consequently, scintillation and optically stimulated luminescence resulted to have a complementary relation in Ce-doped CaF₂ system.     

Preliminary study on singlet oxygen production using CeF3:Tb3+@SiO2-PpIX

Luminescent properties and singlet oxygen production using CeF₃:Tb³⁺-based nanoparticles modified with SiO₂ and protoporphyrin IX (PpIX) were studied. CeF₃:Tb³⁺ nanopowder was prepared via sol–gel route, with subsequent surface coating by SiO₂ layer and the conjugation with photosensitive PpIX molecules. Radioluminescence spectra suggest an energy transfer from Ce³⁺ to Tb³⁺ ions and from Tb³⁺ to molecules of PpIX photosensitizer. The energy transfer was confirmed by photoluminescence decay curves. Singlet oxygen production was detected using a reaction of ¹O₂ with 3’-(p-aminophenyl) fluorescein (APF) chemical probe after X-Ray excitation. Qualitative changes in time resolved photoluminescence spectra in the region of 520 nm indicate ¹O₂ generation. Studied nanocomposites may be good candidates for the application in X-ray induced photodynamic therapy.     

The role of different linear and non-linear channels of relaxation in scintillator non-proportionality

The non-proportional dependence of a scintillator's light yield on primary particle energy is believed to be influenced crucially by the interplay of non-linear kinetic terms in the radiative and non-radiative decay of excitations versus locally deposited excitation density. A calculation of energy deposition, −dE/dx, along the electron track for NaI is presented for an energy range from several electron-volt to 1 MeV. Such results can be used to specify an initial excitation distribution, if diffusion is neglected. An exactly solvable two-channel (exciton and hole(electron)) model containing 1st and 2nd order kinetic terms is constructed and used to illustrate important features seen in non-proportional light-yield curves, including a dependence on pulse shaping (detection gate width).     

Growth and scintillation properties of the Na2W2O7 crystal

The growth and scintillation properties of the Na₂W₂O₇ crystal are reported. The solid reaction between Na₂CO₃ and WO₃ is used to synthesise the Na₂W₂O₇ material. The Na₂W₂O₇ single crystal has been grown by the Bridgman method. And the Na₂W₂O₇ single crystal with sizes 14×7×6 mm³ has been achieved. The transmission spectra, the Ultraviolet fluorescence spectra and the X-ray excited luminescence spectra of the Na₂W₂O₇ crystal are measured. The measurement results show that the Na₂W₂O₇ crystal is a promising intrinsic scintillator.     

Bridgman growth and site occupation in LuAG:Ce scintillator crystals

LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2×2×8 mm³ shaped samples with Ce concentration in the range 0.05–0.55 at%. Essential improvement of performance was demonstrated in samples containing ≥0.2 at% of Ce; the light yield measured in LuAG:Ce (0.55 at%) was about 26000 ph/MeV, or close to that of LSO.     

Long range enhancement of boron diffusivity by phosphorus diffusion

The effect of electron and ion beam irradiation on the Si_{L vv} Auger spectra of SiO₂, Si₃N₄ and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of “free” silicon during irradiation. While in Si-oxynitride (O/N = 0.37) the beam effects were almost negligible, some damage was found in Si₃N₄, but SiO₂ appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy (ELS) of ion bombarded SiO₂ and Si₃N₄ films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films.