Synthesis and applications of graphene oxide aerogels in bone tissue regeneration: a review

Development of biocompatible porous supports is a promising strategy in the field of tissue engineering for the repair and regeneration of bone tissues with severe damage. Graphene oxide aerogels (GOAs) are excellent candidates for the manufacture of these systems due to their porosity, ability to imitate bone structure, and mechanical resistance, and according to their surface chemical reactivity, they can facilitate osseointegration, osteogenesis, osteoinduction and osteoconduction. In this review, synthesis of GOAs from the most primary source is described, and recent studies on the use of these functionalized carbonaceous foams as scaffolding for bone tissue regeneration are presented.     

TBOR-shaped electro-optic modulator with dual output based on double-layer graphene

We proposed an electro-optic modulator with two-bus one-ring (TBOR) structure to improve the extinction ratio and reduce insert loss. It has a dual output compared with one-bus one-ring structure. In addition, double-layer graphene makes it possible for the modulation in the visible to mid-infrared wavelength range. It shows that this new electro-optic modulator can present two switching states well with low insertion loss, high absorption and high extinction ratio. At $\lambda =1550\text{ nm}$, when the switching states are based on the chemical potential, ${\mu }_{\mathrm{c}}=0.38\text{ eV}$ and ${\mu }_{\mathrm{c}}=0.4\text{ eV}$, the insertion losses of both output ports are less than 2 dB, the absorption of the output port coupled via a micro-ring reaches 45 dB and the extinction ratio reaches 14 dB. When the refractive index of the dielectric material is 4.2, the applied voltage will be less than 1.2 V, thus can be used in low-voltage CMOS technology.     

Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

Quantum chemistry investigation on the active site of Mn-SOD

In this paper, we carried out a theoretical study on the active site structures of the Mn-SOD with ab initio Hartree–Fock SCF method, and analyzed the molecular orbital energies, charges and atomic orbital contribution to the frontier molecular orbital.     

Effect of Ba and Bi doping on the synthesis and sintering of Ge-based apatite phases

Recently, high oxide ion conduction has been observed in the apatite-type systems La_9.33+x(Si/Ge)₆O_26+x/2, with conductivities approaching and even exceeding that of yttria-stabilized zirconia. The Ge-based phases have been reported to suffer from Ge loss and undergo irreversible structural changes on sintering at the high temperatures required to obtain dense pellets. In this paper we discuss doping studies (Ba, Bi for La) aimed at stabilizing the hexagonal apatite lattice to high temperature, and/or lowering the synthesis and sintering temperatures. The results show that doping with Ba helps to stabilize the hexagonal lattice at high temperatures, although Ge loss appears to still be a problem. Conductivity data show that, as previously reported for the Si-based systems, non-stoichiometry in the form of cation vacancies and/or oxygen excess is required to achieve high oxide ion conduction in these Ge-based systems. Neutron diffraction structural data for the fully stoichiometric phase La₈Ba₂Ge₆O₂₆ shows that the channel oxygen atoms show little anisotropy in their thermal displacement parameters, consistent with the low oxide ion conductivity of this phase. Bi doping is shown to lower the synthesis and sintering temperatures, although the presence of Bi means that these samples are not stable at high temperatures under reducing conditions.Presented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, April 10–12, 2003     

Crystal structure and ionic conductivity of the series A2Bi24Mo8X2O68 (A = Ca, Sr and Ba and X = Cr and W) in the Bi2O3?MoO3 system

A series of A₂Bi₂₄Mo₈X₂O₆₈ compounds, Ca₂Bi₂₄Mo₈Cr₂O₆₈ (CBMC), Sr₂Bi₂₄Mo₈Cr₂O₆₈ (SBMC), Pb₂Bi₂₄Mo₈Cr₂O₆₈ (PBMC) and Ba₂Bi₂₄Mo₈W₂O₆₈ (BBMW) have been synthesized by the solid-state method and characterized by single crystal X-ray diffraction. The compounds index into the monoclinic P2/c system with a=11.687(4) ?, 5.784(2) ?, 24.728(9) ?, 101.911(6)°, Z=1; 11.673(6) ?, 5.775(3) ?, 24.670(2) ?, 101.757(8)°, Z=1; 11.638(3) ?, 5.790(1) ?, 24.655(6) ?, 101.716(4)°, Z=1 and 11.718(6) ?, 5.818(3) ?, 24.716(12) ?, 101.835(9)°, Z=1 for CBMC, SBMC, PBMC and BBMW, respectively. The structures were solved by direct methods and refined to R indices of 0.081, 0.065, 0.080 and 0.079 respectively. These compounds are isostructural with Bi₂₆Mo₁₀O₆₉ and the structure consists of columns of [Bi₁₂O₁₄] along the b-axis, surrounded by Mo/Cr/WO₄ tetrahedra. a.c. impedance studies indicate higher values of ionic conductivity for the tungsten-substituted compounds. Supplementary material The crystal data of CBMC, SBMC, PBMC and BBMW have been deposited at the Fachinformationszentrum Karlsruhe (FIZ) with the numbers CSD 415143, CSD 415145, CSD 415144 and CSD 415142, respectively.     

石墨烯的制备、功能化及在化学中的应用

石墨烯是最近发现的一种具有二维平面结构的碳纳米材料, 它的特殊单原子层结构使其具有许多独特的物理化学性质. 有关石墨烯的基础和应用研究已成为当前的前沿和热点课题之一. 本文仅就目前石墨烯的制备方法、功能化方法以及在化学领域中的应用作一综述, 重点阐述石墨烯应用于化学修饰电极、化学电源、催化剂和药物载体以及气体传感器等方面的研究进展, 并对石墨烯在相关领域的应用前景作了展望.