Defect-related relaxation processes in irradiated rare gas solids

Electronic and atomic relaxation processes in preirradiated solid Ar doped with N 2 were studied with a focus on the role of radiative electronic transitions in relaxation cascades. Combining methods of activation spectroscopy - thermally stimulated and photon-stimulated exoelectron emission, a new channel of relaxation induced by photon emission from metastable N atoms was detected. It was shown that in insulating materials with a wide conduction band photons of visible range can release electrons from both kinds of traps - shallow (lattice defects) and deep thermally disconnected ones. Correlation in the charge recombination reaction yield and the yield of low temperature desorption - important relaxation channel in a preirradiated solid - clearly demonstrates interconnection between atomic and electronic processes of relaxation.     

化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

硫化铟是一种稳定、低毒性的半导体材料. 本文采用低成本的化学浴沉积方法制备了硫化铟敏化太阳电池, X射线衍射(XRD)、光电子能谱(XPS)和扫描电镜(SEM)结果表明形成了硫化铟敏化的二氧化钛薄膜. 化学浴沉积温度对所得硫化铟敏化薄膜的形貌有显著的影响, 进而影响电池性能. 温度太低时, 化学浴沉积反应速率太低, 只发生少量沉积; 温度太高时, 化学浴沉积反应速率较快, 硫化铟来不及沉积到二氧化钛多孔薄膜内部. 当温度在40℃时, 硫化铟沉积均匀性最好, 薄膜的光吸收性能最佳, 电池的短路电流最大, 另外, 填充因子达到最佳, 为65%, 电池总体光电转换效率为0.32%.     

Recombination analysis of autosomal short tandem repeats in Chinese Han families

Recombination fractions between forensic STRs can be extrapolated from the International HapMap Project, but the concordance between recombination fractions predicated from genetic maps and derived from observation of STR transmissions in families is still ambiguous for autosomal STRs because of limited family studies. Therefore, the main goal of this study is to compare recombination fractions estimated by pedigree analysis with those derived from HapMap phase SNP data. Genotypes of nine autosomal STR pairs (TPOX‐D2S1772, D5S818‐CSF1PO, D7S3048‐D7S820, D8S1132‐D8S1179, TH01‐D11S2368, vWA‐D12S391, D13S325‐D13S317, D18S51‐D18S1364, and D21S11‐PentaD) from 207 two‐generation families with two to five children (the number of families with five, four, three, and two children was 2, 3, 20, and 182, respectively) were used to analyze the recombination. The linkage analysis showed that significant linkage was observed at six STR pairs (D5S818‐CSF1PO, D8S1132‐D8S1179, TH01‐D11S2368, vWA‐D12S391, D13S325‐D13S317, and D18S51‐D18S1364) with genetic distances <36.22 cM in HapMap. Their recombination fractions calculated from family data were very close to those derived from HapMap. However, three STR pairs of TPOX‐D2S1772, D7S3048‐D7S820, and D21S11‐PentaD showed no significant linkage with genetic distances from 43.38 to 91.49 cM. Our results indicate that recombination fractions extrapolated from HapMap can provide a substitute if empirical data are unavailable for the linkage STR pair with a genetic distance spanned <36.22 cM.     

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

The in-situ capacitance and dielectric properties of 25 MeV C⁴⁺ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 10¹⁰ – 5 × 10¹³ ions/cm². The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence.     

Recombination induced hypergraphs: A new approach to mutation-recombination isomorphism

Natural selection acts on genetic variation that comes from two principal sources: mutation and recombination. Because of the inherent differences between mutation and recombination, it is often assumed that they are qualitatively different ways to explore the genotype space. In this paper a new way of constructing recombination spaces is introduced and the topological features of the resulting hypergraphs are analyzed. It is shown that types which are neighbors in the point mutation space are also neighbors in the recombination space, i.e., mutation and recombination spaces are homomorphic. This implies that the shapes of the fitness functions explored by mutation and recombination are similar. However, the potential of one- and two-point recombination operators to explore the fitness landscape may differ dramatically from uniform recombination operators or mutation operators because of the limited number of recombinant types they can produce. © 1996 John Wiley & Sons, Inc.     

A probabilistic analysis of a discrete-time evolution in recombination

We study the discrete-time evolution of a recombination transformation in population genetics. The transformation acts on a product probability space, and its evolution can be described by a Markov chain on a set of partitions that converges to the finest partition. We describe the geometric decay rate to this limit and the quasi-stationary behavior of the Markov chain when conditioned on the event that the chain does not hit the limit.     

时间分辨拉曼光谱研究一氧化氮与肌红蛋白的结合过程

纳秒瞬态拉曼光谱技术是研究分子结构变化超快动态过程的重要实验手段之一.而肌红蛋白(Mb)与小分子配体的结合过程一直是人们研究的焦点.本文旨在利用纳秒瞬态拉曼光谱技术研究小分子配体NO与肌红蛋白结合的动力学过程.通过考察MbNO光解后产物脱氧肌红蛋白(DeoxyMb)与反应物MbNO的ν4特征振动峰的强度比值随激光激发功率的变化,阐述了利用纳秒瞬态拉曼光谱技术研究MbNO体系中NO与DeoxyMb结合过程的可行性.利用纳秒瞬态拉曼光谱技术,获得了与皮秒时间分辨拉曼和皮秒时间分辨吸收相一致的结合动力学实验结果.为研究其它复杂体系的超快结合动力学过程提供了一种新的思路.     

Recombination waves in CdS induced by optical quenching

Low-frequency current oscillations induced by optical quenching were observed in highly photosensitive CdS crystals. No evidence of a negative differential resistivity was found. The current oscillations were observed at room temperature at electric field strengths of 100–800 V/cm. As shown by probe measurements, the instabilities resulted from a bulk phenomenon. The oscillations are related to the excitation of recombination waves, predicted by Konstantinov and Perel.