Localization and quantification of radical production in cavitating flows with luminol chemiluminescent reactions

Hydrodynamic cavitation experiments in microfluidic systems have been performed with an aqueous solution of luminol as the working fluid. In order to identify where and how much reactive radical species are formed by the violent bubble collapse, the resulting chemiluminescent oxidation reaction of luminol was scrutinized downstream of a constriction in the microchannel. An original method was developed in order to map the intensity of chemiluminescence emitted from the micro-flow, allowing us to localize the region where radicals are produced. Time averaged void fraction measurements performed by laser induced fluorescence experiments were also used to determine the cavitation cloud position. The combination void fraction and chemiluminescence two-dimensional mapping demonstrated that the maximum chemiluminescent intensity area was found just downstream of the cavitation clouds. Furthermore, the radical yield can be obtained with our single photon counting technique. The maximum radical production rates of 1.2*10⁷ OH/s and radical production per processed liquid volume of 2.15*10¹⁰ HO/l were observed. The proposed technique allows for two-dimensional characterisation of radical production in the microfluidic flow and could be a quick, non-intrusive way to optimise hydrodynamic cavitation reactor design and operating parameters, leading to enhancements in wastewater treatments and other process intensifications.     

玻璃陶瓷材料中Tm3+离子红外到蓝色上转换发光

系统研究了PbF2+GeO2+WO3ⅩⅣTmF3玻璃陶瓷材料中,在近红外光(1.06μm)激发下,Tm3+离子的发光特性.实验中观测到Tm3+离子的两组峰值位置分别在20920cm-1和22173cm-1的蓝色上转换发光,并证实这两组上转换发光分别与吸收三个和四个光子有关,同时建立了上转换发光的模型.为了选择最佳掺杂浓度,详细地测量了Tm3+离子峰值为20920cm-1的蓝色上转换发光强度与TmF3浓度的关系.     

Electrical behavior of the Au/MoS2 interface studied by light emission induced by scanning tunneling microscopy

Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS₂ surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS₂ surface so that their electrical behavior can be changed depending on their position with regard to the other islands.     

Negative luminescence in semiconductors: a retrospective view

Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

Pr(0.5):ZBLAN的双频激发上转换发光的研究

报道了Pr(0.5):ZBLAN玻璃在双频双光束光源激发下的激发态上转换现象.发现上转换发射谱的荧光与常规荧光发射谱的荧光一致，还发现双频激发下的上转换激发谱有3个明显的谱峰，它们依此对应于788.5nm 1G4→3P2,850.5nm 1G4→1I6和805.0nm 3H6→1D2的激发态吸收跃迁，而大的850.5nm上转换激发谱峰是由大的1G4(Pr3+ )→1I6(Pr3+)跃迁的振子强度f=23.04×10-6所致.这说明起源于1G4能级的激发态吸收上转换尤其1G4(Pr3+)→1I6(Pr3+)     

二次谐波系统在浑沌态下的光子统计

数值分析了调制泵浦作用下的二次谐波产生系统的浑沌动力学行为.考虑到混沌运动的遍历性,提出一种研究浑沌态光场光子统计的数值方法,即通过数值积分求解系统动力学方程估计光子数的系统平均.运用这一方法于二次谐波系统,计算了其在浑沌态下的光子统计分布,结果表明是一种超Poisson分布.     

基于ZBLANⅩⅣPr,Yb频率上转换发光的三维立体显示

本文对利用ZBLANⅩⅣPr,Yb频率上转换发光的三维立体显示做了研究,探讨了其中的一些物理问题.在实验中,我们利用Yb³⁺离子敏化的方法提高Pr³⁺的上转换发光效率;通过降低能引起单频上转换发光的激光强度来提高寻址点和非寻址点在显示过程中的对比度.     

HoYb:YVO4的上转换发光研究

研究了960nm激光激发下HoYb双掺钒酸钇晶体HoYb:YVO4的直接上转换增敏发光,发现了Ho3+离子的上转换发光现象,HoYb:YVO4晶体的上转换发光是5F5→5I8最强,而5S2→5I8相对小了一个数量级,这是由于YVO4晶体既有很强的振子强度又有很大的多声子无辐射弛豫造成的. 关键词： 上转换发光 直接增敏(敏化) 钒酸钇YVO4晶体 Ho3+离子     

激光调Q CAI

从激光调Q速率方程出发,分析推导了激光调Q过程中,腔内光子数与工作物质内反转粒子数间的关系.再根据激光调Q的过程中,对腔Q值控制方式不同,将激光调Q技术分为:转镜调Q、声光调Q、电光调Q、饱和吸收调Q和脉冲透射式调Q.用C语言进行了激光调Q CAI软件的开发研制,获得了将文学、图形、动画和计算融为一体的,直观而生动地将调Q的理论和过程再现于屏幕的CAI课件.介绍了课件的内容、结构及其特点.