Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P₂O₅-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ_n0.5 cm² V ⁻¹ s⁻¹ and a carrier concentration of n3×10¹⁷ cm⁻³ at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.     

磷掺杂TiO2薄膜的制备与表征及其可见光照射下光催化降解邻苯二甲酸丁苄酯性能（英文）

P‐doped TiO2 (PTIO) thin‐films with different P contents were prepared using a sol‐gel method. The thin‐film samples were characterized using various techniques. The photocatalytic activity was evaluated by decomposing butyl benzyl phthalate under visible‐light irradiation. The results showed that the transformation of anatase to the rutile phase was inhibited and grain growth of TiO2 was prevented by P doping. The results confirm that the doped P atoms existed in two chemical forms, and those incorporated in the TiO2 lattice may play a positive role in photocatalysis. The high photocatalytic activities of the PTIO thin‐films may be the result of extrinsic absorption through the creation of oxygen vacancies, rather than excitation of the intrinsic absorption band of bulk TiO2 . The PTIO can be recycled with little depression of the photocatalytic activity. After six cycles, the photocatalytic activity of the PTIO film was still higher than 98%.     

Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

The relationship between field emission properties and C 1s core level shifts of heavily phosphorus-doped homoepitaxial (1 1 1) diamond is investigated as a function of annealing temperature in order to optimize surface carbon bonding configurations for device applications. A low field emission threshold voltage is observed from surfaces annealed at 800 °C for hydrogen-plasma treated surface, while a low field emission threshold voltage of wet-chemical oxidized surface is observed after annealing at 900 °C. The C 1s core level by X-ray photoelectron spectroscopy (XPS) showed a shoulder peak at 1 eV below the main peak over 800 and 900 °C annealing temperature for hydrogen-plasma treated and wet-chemical oxidized surfaces, respectively. When the shoulder peak intensity is less than 10% of the main peak intensity, lower threshold voltages are observed. This is due to the carbon-reconstruction which gives rise to a small positive electron affinity. By increasing annealing temperature, the shoulder peak ratios also increase, which indicates that a surface graphitization takes place. This leads to higher threshold voltages.     

扩散掺杂的p型ZnO薄膜的光学性质研究

采用原子层沉积技术(atomic layer deposition)在InP衬底上生长ZnO薄膜,并在不同温度下(500和700 ℃)进行热退火处理,将P掺杂进入ZnO,得到p型ZnO薄膜。样品的光学特性通过光致发光光谱(photoluminescence, PL)来测定,得出热退火温度是影响P扩散掺杂的重要因素,低温PL光谱中,700 ℃热退火1 h样品的光谱展现出四个与受主相关的发射峰：3.351,3.311,3.246和3.177 eV,分别来自受主束缚激子的辐射复合(A°X)、自由电子到受主的发射(FA)、施主受主对的发射(DAP)以及施主受主对的第一纵向声子伴线(DAP-1LO),计算得到受主束缚能为122 meV,与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂,解决了制约ZnO基光电器件发展的主要问题, 对ZnO基半导体材料及其光电器件的发展有重要意义。     

Field emission properties of DLC and phosphorus-doped DLC films prepared by electrochemical deposition process

Field emission behavior of diamond-like carbon (DLC) and phosphorus-doped DLC (p-DLC) films prepared by electrochemical deposition process was comparatively investigated. It was shown phosphorus incorporation in the DLC film could lower the turn on field from 12 to 9.5 V/μm and increase the current density from 12.6 to 45.7 μA/mm² under high electric field. And better field emission performance of p-DLC films would be mainly attributed to the influence of the surface morphology and the changes of microstructure due to the phosphorus incorporation.