Property improvement of pulsed laser deposited boron carbide films by pulse shortening

Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B₄C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm⁻² result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm⁻² fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 × 10⁴ to 7 × 10⁴ mm⁻² deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses.     

Relaxor type perovskites: Primary candidates of nano-polar regions

Relaxor properties of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) and non-lead perovskite thin films have been analysed in terms of large frequency dispersion of dielectric response at low temperatures. A wide spectrum of dielectric relaxation was observed in the frequency-dependent response of the imaginary part of the dielectric permittivity. Transformation from normal ferroelectric to relaxor behaviour has been observed in the case of the Ca substituting the BaTiO₃ thin films. A number of techniques were exploited to investigate the wide spectrum of relaxation times in pulsed laser ablated thin films.ac anddc electric field induced complex dielectric properties of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) thin films were studied as function of frequencies at different temperatures. Nonlinear behaviour of dielectric susceptibility with respect to the amplitude of theac drive was observed at lower temperatures. The frequency dependence of transition temperatureT _m (temperature of the maximum of dielectric constant) was studied using the Vogel-Fulcher relation. Dedicated to Professor C N R Rao on his 70th birthday     

High-speed deposition of RE123 film with large current capacity by hot-wall type PLD system

We have studied a hot-wall heating system to produce GdBa₂Cu₃O_y (GdBCO) films with large critical currents (I_c) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (J_c) of about 3 MA/cm² and I_c over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform I_c distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with I_c over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W.     

氧化镍薄膜的制备及电化学性质

分别采用真空蒸镀_热氧化(VE_TO)及脉冲激光沉积(PLD)技术制备氧化镍(NiO)阳极薄膜材料,并利用XRD、SEM、循环伏安、充放电等方法对薄膜的结构和电化学性能进行了表征。结果表明,两种方法均制备了厚度均匀、表面光滑、与基片结合紧密、无缺陷、致密的纳米晶形NiO薄膜。采用PLD技术制备的薄膜颗粒更小、结构更有序,具有更高的电化学比容量,并且能承受大电流充放电。因此,这两种方法制备的NiO薄膜可根据充放电电流密度的要求有选择的应用于全固态薄膜锂离子电池中。     

Annealing effect on the structural and magnetic properties of nickel ferrite thin films

Nickel ferrite is a soft magnetic material with inverse spinel structure. Soft ferrite films are used in microwave devices, integrated planar circuits, etc., because of their high resistivity. In this work, thin films of nickel ferrite were deposited on Si (100) substrate by using pulsed laser deposition (PLD) technique. The thickness of the film was measured by surface profilometer and also by X‐ray reflectivity (XRR). The films were annealed at three different temperatures to observe the effect on the structural and magnetic properties of the film. The films were characterised by X‐ray diffraction (XRD), Raman spectroscopy and vibrating sample magnetometer (VSM) to study the structural and magnetic properties. Copyright © 2010 John Wiley & Sons, Ltd.     

PLD法生长n-Zn1-xCoxO/p-Si异质结的电学性能研究

用高功率脉冲激光轰击Zn1-xCoxO,得到锌、钴和氧的原子、分子和团簇等混合体,并在p型单晶Si表面反应生成n型Zn1-xCoxO.X射线衍射(XRD)、原子力显微镜(AFM)研究表明,这层材料是结构致密均匀、呈c轴高度择优取向的薄膜,与p型Si材料形成n-Zn1-xCoxO/p-Si异质结.在Zn1-xCoxO中加入H,生成了Co-H-Co聚合体,异质结的势垒高度随着Co含量的增加而增加,同时深能级的Co-d轨道捕获作为浅施主的间隙H提供的电子,造成的体系n型半导体层的载流子浓度降低,电阻率提高,使得n-Zn1-xCoxO/p-Si异质结在6.5V时漏电流降致6×10-3 mA,反向击穿电压超过20V,电学性能得到显著改进.     

Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing

High quality, thick, highly oriented crystalline thin films of Yttrium Aluminum Garnet (Y₃Al₅O₁₂) and Yttrium Aluminum Perovskite (YAlO₃) doped with Erbium were prepared by pulsed laser deposition. Samples were created in vacuum or oxygen environment. Depositions were arranged at room temperature, or at high substrate temperatures ranging from 800 to 1100 °C. Amorphous layers were annealed by laser, or in oven (argon flow, temperatures in range from 1200 to 1400 °C). Fused silica and sapphire (0 0 0 1) were used as substrates. Properties of films were characterized by X-ray diffraction, atomic force microscopy, and by photoluminescence measurement. Size of crystalline grains was in the range 116-773 nm. Thickness of layers was up to 17 μm.     

脉冲激光沉积的金属原子团簇的电子状态及生长的研究

 介绍了采用X射线光电子谱(XPS)等技术研究脉冲激光沉积在Ni、Mo、C、NaCl(100)表面的Cu、Au原子团簇的电子状态;结合Cu₂p_3/2 X射线光电子谱峰和Cu L₃M_4,5M_4,5俄歇跃迁分离了电子结合能的初态和终态贡献,得出了它们随Cu表面浓度变化的关系,并对之作出了解释。使用XPS、RBS、TEM三项技术研究了Au在NaCl(100)表面的生长过程,通过计算得出了在不同表面浓度下Au原子团簇的平均高度和表面覆盖率。     

γ-LiAlO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积(PLD)技术在(302)γ-LiAlO₂衬底上成功生长了非极性的a面(1120) ZnO薄膜. 衬底温度为350℃时，薄膜是混合取向(a向和c向)，以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的(1120)取向，摇摆曲线半高宽0.65°，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性. 衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱(PL)带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1/5. 关键词： 非极性ZnO 2')" href="#">γ-LiAlO₂ PLD 透射谱