Optical Diffractive Memories: Angular Selectivity and Diffraction Efficiency in Dichromated Gelatin

Two thousand images of resolution 512×512 pixels as a regular matrix pattern of 10×10 elements are stored, where each element is angularly multiplexed 20 times in a 25 μm thickness of dichromated gelatin emulsion without cross-talk effect. The surface area of the matrix is 1 cm². We show good concordance of the angular selectivity between the experimental result and theory. The diffraction efficiency of each 20 multiplexed images is measured and has nearly the same value. Examples of reconstructed images for multiple applications are given, for example, storage of 160,000 images on a 3′1/2 floppy disc format, which is about 100 min of black and white film. Application can be made to automobile cartography and storage of X-ray images as well as weather forecast images. Colored diffractive images are also possible and are illustrated.     

Multistate/multifunctional behaviour of 4'-hydroxy-6-nitroflavylium: a write-lock/read/unlock/enable-erase/erase cycle driven by light and pH stimulation

We have investigated the network of reactions observed for the photochromic 4'-hydroxy-6-nitroflavylium compound in aqueous solutions upon pH changes (including pH jump and stopped flow experiments) and light excitation. The changes observed in the NMR and UV/Vis spectra allowed identification of ten different forms in which this compound can be transformed depending on the experimental conditions. Equilibrium and kinetic constants have been determined. Compared with other members of the flavylium family, 4'-hydroxy-6-nitroflavylium is characterized by a large cis-->trans isomerization barrier, and a very efficient hydration reaction. These peculiar features allow writing, reading, storing and erasing photonic information on 4'-hydroxy-6-nitroflavylium by a novel cyclic process that involves the following steps: write-lock/read/unlock/enable-erase/erase.     

Analysis of Imperfect Rephasing in Photon Echo-Based Quantum Memories

Over the last two decades, quantum memories have been intensively studied for potential applications of quantum repeaters in quantum networks. Various protocols have also been developed. To satisfy no noise echoes caused by spontaneous emission processes, a conventional two-pulse photon-echo scheme has been modified. The resulting methods include double-rephasing, ac Stark, dc Stark, controlled echo, and atomic frequency comb methods. In these methods, the main purpose of modification is to remove any chance of a population residual on the excited state during the rephasing process. Here, we investigate a typical Gaussian rephasing pulse-based double-rephasing photon-echo scheme. For a complete understanding of the coherence leakage by the Gaussian pulse itself, ensemble atoms are thoroughly investigated for all temporal components of the Gaussian pulse, whose maximum echo efficiency is 26% in amplitude, which is unacceptable for quantum memory applications.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

双原子正方晶格光子晶体边界模式的光传输特性

利用平面波展开法,发现双原子正方晶格光子晶体中ΓM方向边界面存在着快慢两类边界模式,并且通过计算色散关系和电场分布研究了边界参量对这两类边界模式传输特性的影响.依据两种模式的色散关系,计算了群指数和群速度色散参量,结果表明边界参量的变化对第一类边界模式传输特性的影响较小,该模式的平均群指数始终维持在5.0左右;第二类边界模式与第一类模式明显不同,边界参量的变化能够有效地影响到这种模式的传输特性,该模式的最大平均群指数可达178左右.利用时域有限差分法记录了不同时刻电场强度在边界附近的分布及监测点处的电场幅度变化情况,结果表明,两类模式都能够被限制在边界附近并向前传播,时域有限差分法得到的群速度与平面波展开法的结果完全吻合.     

Alkoxide Derived SrBi2Ta2O9 Phase Pure Powder and Thin Films

Phase pure powder and thin films of the novel ferroelectric materials SrBi₂Ta₂O₉ (SBT) have been prepared using the organic precursors. The xero-gel formed was dried and characterized using TGA and DTA to determine the organic burn out and crystallization temperature of SBT. Powder X-ray diffraction was used systematically to check the crystallinity of SBT. Phase pure SBT powder was formed as low as 650°C and thin films at 600°C in comparison to other earlier reported work. SEM micrographs show a grain size of ≈0.1 μm and show crack free films with a film thickness of 2 μm.     

Adaptive Clipping for Neural Associative Memories

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Molecular Engineering of Chalcogen-Embedded Anthanthrenes via peri-Selective C−H Activation: Fine-Tuning of Crystal Packing for Organic Field-Effect Transistors

Disclosed herein is a RhCl₃-catalyzed peri-selective C−H/C−H oxidative homo-coupling of 1-substituted naphthalenes, which provides a highly efficient and streamlined approach to chalcogen-embedded anthanthrenes from readily available starting materials. Introducing O, S, and Se into the anthanthrene skeleton leads to gradually increased π–π stacking distances but significantly enhanced π–π overlaps with the growth of the hetero-atom radius. Moderate π–π distance, overlap area, and intermolecular S−S interactions endow S-embedded anthanthrene ( PTT ) with excellent 2D charge-transport properties. Moreover, the transformation of p-type to n-type S-embedded anthanthrenes is realized for the first time via the S-atom oxidation from PTT to PTT-O4 . In organic field-effect transistor devices, PTT derivatives exhibit hole transport with mobilities up to 1.1 cm² V⁻¹ s⁻¹, while PTT-O4 shows electron transport with a mobility of 0.022 cm² V⁻¹ s⁻¹.     

Organic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting material

A novel 1,3,4-oxadiazole-substituted benzo[b]triphenylene was synthesized by three-step synthetic procedure and OFET device design was successfully designed after theoretical calculations made using Gaussian software. For investigating the field-effect properties of designed organic electronic device, a SiO₂ (300 nm) was thermally grown on p-Si wafer at 1000 °C as a dielectric layer and gate, source and drain contacts have been deposited using Au metal with physical vapour deposition. 1,3,4-Oxadiazole-substituted benzo[b]triphenylene was spin coated on the source and drain electrodes of our device, forming organic/inorganic interfaced field-effect transistors. Surface morphology and thin film properties were investigated using AFM. All electrical measurements were done in air ambient. The device showed a typical p-type channel behaviour with increasing negative gate bias voltage values. Our results have surprisingly shown that the saturation regime of this device has high mobility (μ_FET), excellent on/off ratio (I_on/I_off), high transconductance (g_m) and a small threshold voltage (V_Th). The values of μ_FET, I_on/I_off, g_m and V_Th were found as 5.02 cm²/Vs, 0.7 × 10³, 5.64 μS/mm and 1.37 V, respectively. These values show that our novel organic material could be a potential candidate for organic electronic device applications in the future.