Cyclodextrin derivatives functionalized highly sensitive chiral sensor based on organic field-effect transistor

Novel highly sensitive chiral organic field-effect transistors(COFET)were developed by directly assembling imidazolium3,5-dimethylphenylcabamoylated-β-cyclodextrin(lm^+-Ph-β-CD)and 3,5-dimethylphenylcarbamoylated-β-CD(Ph-β-CD)respectively onto the semiconductor layer as sensing units.The Im+-Ph-β-CD/COFET afforded better enantioselectivity and a lowest detection concentration of10^-18 L/mol as well as the potentiality in quantitative analysis of commercial medicines.     

Molecular Engineering of Chalcogen-Embedded Anthanthrenes via peri-Selective C−H Activation: Fine-Tuning of Crystal Packing for Organic Field-Effect Transistors

Disclosed herein is a RhCl₃-catalyzed peri-selective C−H/C−H oxidative homo-coupling of 1-substituted naphthalenes, which provides a highly efficient and streamlined approach to chalcogen-embedded anthanthrenes from readily available starting materials. Introducing O, S, and Se into the anthanthrene skeleton leads to gradually increased π–π stacking distances but significantly enhanced π–π overlaps with the growth of the hetero-atom radius. Moderate π–π distance, overlap area, and intermolecular S−S interactions endow S-embedded anthanthrene ( PTT ) with excellent 2D charge-transport properties. Moreover, the transformation of p-type to n-type S-embedded anthanthrenes is realized for the first time via the S-atom oxidation from PTT to PTT-O4 . In organic field-effect transistor devices, PTT derivatives exhibit hole transport with mobilities up to 1.1 cm² V⁻¹ s⁻¹, while PTT-O4 shows electron transport with a mobility of 0.022 cm² V⁻¹ s⁻¹.     

Organic/inorganic interfaced field-effect transistor properties with a novel organic semiconducting material

A novel 1,3,4-oxadiazole-substituted benzo[b]triphenylene was synthesized by three-step synthetic procedure and OFET device design was successfully designed after theoretical calculations made using Gaussian software. For investigating the field-effect properties of designed organic electronic device, a SiO₂ (300 nm) was thermally grown on p-Si wafer at 1000 °C as a dielectric layer and gate, source and drain contacts have been deposited using Au metal with physical vapour deposition. 1,3,4-Oxadiazole-substituted benzo[b]triphenylene was spin coated on the source and drain electrodes of our device, forming organic/inorganic interfaced field-effect transistors. Surface morphology and thin film properties were investigated using AFM. All electrical measurements were done in air ambient. The device showed a typical p-type channel behaviour with increasing negative gate bias voltage values. Our results have surprisingly shown that the saturation regime of this device has high mobility (μ_FET), excellent on/off ratio (I_on/I_off), high transconductance (g_m) and a small threshold voltage (V_Th). The values of μ_FET, I_on/I_off, g_m and V_Th were found as 5.02 cm²/Vs, 0.7 × 10³, 5.64 μS/mm and 1.37 V, respectively. These values show that our novel organic material could be a potential candidate for organic electronic device applications in the future.     

Organic semiconductors in potentiometric gas sensors

Solid-state potentiometric sensors based on the chemical modulation of the work function of organic semiconductors are discussed. The theory of the chemical work function modulation is briefly reviewed. There are several sensor configurations, in which this transduction principle can be employed. First is the Kelvin probe, second is the chemically sensitive field-effect transistor in which the conventional metal gate of the silicon-based transistor has been replaced by an organic semiconductor. Chemical modulation of work function enters also into the operation of the third type of sensor discussed in this review, on “organic field-effect transistor”. It is shown that in reality such sensors are “field-modulated chemiresistors”, rather than potentiometric sensors.     

Ab initio investigation of 2,2′‐bis(4‐trifluoromethylphenyl)‐5,5′‐bithiazole for the design of efficient organic field‐effect transistors

The initial molecular structure of 2,2′‐bis(4‐trifluoromethylphenyl)‐ 5,5′‐bithiazole has been optimized in the ground state using density functional theory (DFT). The distribution patterns of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) have also been evaluated. To shed light on the charge transfer properties, we have calculated the reorganization energy of electron λ_e, the reorganization energy of hole λ_h, adiabatic electron affinity (EA_a), vertical electron affinity (EA_v), adiabatic ionization potential (IP_a), and vertical ionization potential (IP_v) using DFT. Based on the evaluation of hole reorganization energy, λ_h, and electron reorganization energy, λ_e, it has been predicted that 2,2′‐bis(4‐trifluoromethylphenyl)‐5,5′‐bithiazole would be a better electron transport material. Finally, the effect of electric field on the HOMO, LUMO, and HOMO–LUMO gap were observed to check its suitability for the use as a conducting channel in organic field‐effect transistors. © 2015 Wiley Periodicals, Inc.     

A High‐Performance Organic Field‐Effect Transistor Based on Platinum(II) Porphyrin: Peripheral Substituents on Porphyrin Ligand Significantly Affect Film Structure and Charge Mobility

Organic field‐effect transistors incorporating planar π‐conjugated metal‐free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H₂(OX)] (H₂OX=etioporphyrin‐I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H₂TBP=tetra‐(n‐butyl)porphyrin) as determined by single crystal X‐ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field‐effect transistors (FETs) made from thin films of all these metal‐free macrocycles and their metal derivatives show a p‐type semiconductor behavior with a charge mobility (μ) ranging from 10^?6 to 10^?1 cm² V^?1 s^?1. Annealing the as‐deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10^?1 cm² V^?1 s^?1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field‐effect transistors made from thin films of metal‐free macrocycles (except tetra‐(n‐propyl)porphycene) have significantly lower μ values (3.0×10^?6–3.7×10^?5 cm² V^?1 s^?1).     

Electronic state observation of inner organic thin films beneath electrodes: Fluorescence-yield X-ray absorption spectra of pentacene derivative films

The electronic states of inner organic thin films have been investigated by X-ray absorption spectroscopy (XAS) in a bulk-sensitive fluorescence-yield (FY) mode with theoretical analysis. The thin films of the synthesized pentacene derivative, i.e., 6,13-dihydrodiazapentacence (C₂₀N₂H₁₄), on SiO₂-covered Si substrates were fabricated and their morphology and crystallinity were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, respectively. The observed N K-edge FY-XAS spectra were different from the surface-sensitive XAS spectra measured in a partial-electron-yield (PEY) mode. The peaks on the FY-XAS spectra were well reproduced by the theoretical calculation of the unoccupied states of an HAPn molecule. In addition, the incident angle dependence of the FY-XAS spectra was consistent with the expected molecular orientation in the thin films. As a result, we successfully obtained the N and C K-edge FY-XAS spectra of the inner HAPn thin films even beneath Au electrodes.     

Cyclopentadithiophene based branched polymer electrets synthesized by friedel–crafts polymerization

In this report, the BF₃·Et₂O catalyzed Friedel–Crafts polymerization of cyclopentadithiophene monomers for branched conjugation‐interrupted polymer electrets with the potential application in OFET memories were demonstrated. Branched polycyclopentadithiophenes with controlled molecular weights (M_n) of approximately 8800 g/mol and narrow polydispersity index (PDI = 1.08–1.49) were obtained through the optimized polymerization temperature and time, and monomer addition strategy. OFET memories by using the synthesized polymers as the electret layers were fabricated and exhibited multilevel flash memory behaviors, wide memory windows, high on/off ratios, and long retention lifetime. Impressively, due to the strong hydrophobic, extended pi‐conjugation and electron‐donating properties, the branched polycyclopentadithiophene based OFET memory exhibited much lower programming voltage than other branched polymer electrets based devices. It is expected that the branched polycyclopentadithiophenes probably have potential application in other organic electronic devices. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 3140–3150     

Synthesis of highly regioregular poly[3‐(4‐alkoxyphenyl)‐thiophene]s by oxidative catalysis using copper complexes

A novel, easy, and cost‐effective synthetic procedure is reported for the production of very highly regioregular poly[3‐(4‐alkoxyphenyl)thiophene]s by means of oxidative coupling. Four copper complexes were synthesized and used as catalysts to obtain polymers with higher regioregularity compared to the previous oxidative coupling methodologies reported in the literature and similar to that obtained by McCullough and Rieke methods in the synthesis of poly‐3‐alkylthiophenes. The regioregularity of the synthesized polymers was investigated by UV–Visible characterization on polymer thin films and ¹H NMR analysis. The remarkable potentialities of these polymers have emerged from field‐effect transistor mobility measurements operated on devices with bottom‐contact configuration and hexamethyldisilazane‐treated SiO₂ gate dielectric, showing a well‐defined p‐type field‐effect response and maximum mobility values in air higher than 10^?4 cm² V^?1 s^?1. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 4351–4360     

Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer

A top-contact organic field-effect transistor(OFET) is fabricated by adopting a pentacene/1,1’-bis(di-4tolylaminophenyl) cyclohexane(TAPC) heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode.The performances of the heterojunction OFET,including output current,field-effect mobility,and threshed voltage,are all significantly improved by introducing the MoO3 thin buffer layer.The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer,thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.