Low‐Temperature Atomic Layer Deposition of MoS2 Films

Wet chemical screening reveals the very high reactivity of Mo(NMe₂)₄ with H₂S for the low‐temperature synthesis of MoS₂. This observation motivated an investigation of Mo(NMe₂)₄ as a volatile precursor for the atomic layer deposition (ALD) of MoS₂ thin films. Herein we report that Mo(NMe₂)₄ enables MoS₂ film growth at record low temperatures—as low as 60 °C. The as‐deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift‐off patterning for the straightforward fabrication of diverse device structures.