Classification of oxide glasses: A polarizability approach

A classification of binary oxide glasses has been proposed taking into account the values obtained on their refractive index-based oxide ion polarizability α_O2−(n₀), optical basicity Λ(n₀), metallization criterion M(n₀), interaction parameter A(n₀), and ion's effective charges as well as O1s and metal binding energies determined by XPS. Four groups of oxide glasses have been established: glasses formed by two glass-forming acidic oxides; glasses formed by glass-forming acidic oxide and modifier's basic oxide; glasses formed by glass-forming acidic and conditional glass-forming basic oxide; glasses formed by two basic oxides. The role of electronic ion polarizability in chemical bonding of oxide glasses has been also estimated. Good agreement has been found with the previous results concerning classification of simple oxides. The results obtained probably provide good basis for prediction of type of bonding in oxide glasses on the basis of refractive index as well as for prediction of new nonlinear optical materials.     

金属氢的高压合成机理

 从氢原子间及氢分子间的相互作用入手，提出了固体氢中氢分子在高压作用下解离为氢原子，并以氢原子相互结合成金属氢的微观转化过程的机理。用这样的转化机理，可以解释毛河光等关于固体氢的拉曼光谱频率随高压变化规律的实验结果。     

Ultrahigh pressure equation of state of CaS to 1.5 Mbar

Abstract

Energy Dispersive X-ray Diffraction (EDXD) was performed at room temperature to gather structural data on CaS between approximately 1.7 GPa to nearly 150GPa. In these experiments, CaS retained the B1 structure up to approximately 40 GPa above which it began to transform to the B2 structure. The B2 structure remained stable to the highest pressure reached, 149 GPa, where the relative volume V/V₀ was 0.490. Previous studies on CaS extended only up to 52 GPa, which is barely 10 GPa after the B1 phase changes to the B2 structure. Thus it was not possible to accurately extrapolate the equation of state (EOS) for the B2 phase region to significantly higher pressures. In the present study EOS data for CaS was collected to 150 GPa and no other structural change was observed. EOS parameters for the B1 and B2 phase regions agree well with values reported in the literature.     

Energetics and bonding in beryllium metallized carbon clusters

Small carbon clusters C, C₂ and C₃ metallized with beryllium were studied by first principles within the hybrid density functional approach with generalized gradient correction. Cluster isomer structures for the ground state and several excited states where systematically calculated for C_xBe_y with x = 1–3 and y = 1–4 including the vibrational analysis of all states. Ionization potentials and electron affinities are calculated for the ground state cluster isomers. The thermal stability of the ground state isomers was verified within the harmonic approximation of the Helmholtz free energy up to temperatures of about 1000 K. Within the family of clusters studied, C₂Be₃ undergoes a solid-like structural transition at about 260 K changing from a planar structure at low temperatures to a linear isomer at high temperatures.     

An investigation of misfit dislocations in Al on (001) GaAs grown by chemical beam epitaxy

We report a transmission electron microscope study of the morphology and interfacial structure of Aluminium grown on (001) GaAs by chemical beam epitaxy (CBE). The Al grows in islands for all thicknesses deposited, and exhibits four distinct orientation relationships with respect to the substrate. One of these orientation relationships becomes dominant as growth progresses, with (011)_Al parallel to (001)_GaAs. Misfit dislocations can be seen in the interface between this orientation and the substrate with Burgers vector 1/4(110)_GaAs, and a crystallographic analysis shows that these dislocations are associated with interfacial steps of height 1/2[001]_GaAs. In (001)Al on (001)GaAs, the existence of these dislocations has in the past been regarded as evidence for the existence of a rigid-body shift of the Al in the interfacial plane. Using cross-sectional high-resolution TEM, it is shown that this shift is not present in the (011) orientation. The similarity in the microstructure and crystallography of the (001) and (011) orientations leads us to suggest that there is also no shift in (001) Al on (001)GaAs. This is in conflict with previous investigations of this system using a wide variety of techniques.     

Laser induced activation of circuit lines and via-holes on AlN for electroless metal plating

Laser induced activation of fine lines and micro via-holes on aluminium nitride for electroless copper plating is studied. Differing from traditional techniques, this method is demonstrated as an additive and precursorless process, which requires fewer processing steps with good reliability. Ultraviolet, visible and infrared lasers are applied to activate aluminium nitride surfaces. The relations between the quality of activation and laser wavelength, energy density, repetition rate and repetition are described. Depth-dependent activation and metallization of micro via-holes in aluminium nitride using this method are observed and reported for the first time.     

Highly stable carbon-doped Cu films on barrierless Si

Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 °C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.     

Optimization, design and fabrication of a non-cryogenic quantum infrared detector

A study of the optimization of the detectivity of a mid infrared double heterostructure photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step, from a simple p–n junction to the full double heterostructure. The influence of temperature, barrier band gap energy in a double heterostructure, doping density in the active region, on diffusion and generation–recombination mechanisms is analyzed. It is shown how the performances of a double heterostructure photovoltaic detector can be improved by a controlled doping the active region. Nevertheless, its development is still limited by the difficulties occurring during device processing. For example, the use of dry etching for the processing of InAs_0.91Sb_0.09 p–i–n photovoltaic detectors induces a strong leakage current along the mesa edge. In this letter, we show an improvement of the R₀A characteristic by several orders of magnitude at low temperature by using an Ion Beam Etching (IBE) followed by a wet chemical etching. This optimized and reliable device processing allows us to demonstrate that the detector performance is actually limited by the diffusion current of holes. Finally, we discuss the ability of an n-type barrier made of InAs/AlSb super-lattice to avoid hole diffusion and to improve the R₀A characteristic of these detectors. To cite this article: B. Vinter et al., C. R. Physique 4 (2003).     

The structural, elastic and electronic properties of BiI3: First-principles calculations

The structural, elastic and electronic properties of BiI₃ are investigated using the first-principles pseudopotential calculations within the framework of density functional theory. The calculated equilibrium structural parameters agree well with the experimental values. The results show that rhombohedral R-3 structure is low enthalpy structure at zero pressure. R-3 structure will transform into SbI₃-type structure (space group P2₁/c) at about 7.0 GPa. At zero pressure, BiI₃ with R-3 symmetry meets the mechanical stability criteria, but BiI₃ with P-31 m symmetry is an unstable one mechanically. For R-3 structure, the obtained bulk, shear, and Young’s moduli are 25.6, 15.3 and 38.3 GPa, respectively. BiI₃ presents large elastic anisotropy. Debye temperature of R-3 structure calculated is 181 K. The metallization pressure of R-3 structure is about 133 GPa and that of predicted high pressure phase P2₁/c structure is about 61 GPa, indicating BiI₃’s potential application as a nuclear radiation detector under high pressure environment.