A covering construction for packing disjoint copies of the Hoffman‐Singleton graph into K50

In this note we show how coverings induced by voltage assignments can be used to produce packings of disjoint copies of the Hoffman‐Singleton graph into K₅₀. © 2003 Wiley Periodicals, Inc. J Combin Designs 11: 408–412, 2003; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/jcd.10049     

High Voltage Pulse Power and the Technics for the Capacitor Power-Storage Type

Lower hybrid wave （LHW）, electro cyclotron （EC） and neutral beam injection （NBI） etc. are the important methods of auxiliary heating. They would be devoted to the HL-2A tokamak step by step. In order to satisfy the debug of each system and the need of the experiment, the system should be equipped with high voltage pulse power （HVPP） according to the requirement.     

LaB6在低压强氮气和氦气中的放电特性

 研究了LaB₆在1~10 Pa氮气和氦气中的直流和脉冲放电特性以及放电过程对电极的影响。结果表明，电极直径为5 mm的LaB6氦气放电管在脉冲工作状态下可以长期稳定放电。在脉冲电压为2.2 kV、脉冲宽度10 ms、频率13.3 Hz下，脉冲峰值放电电流超过120 A。氦气放电管在放电过程中，阴极表面有离子的清洗和活化作用，可以使电极的表面逸出功降低，提高放电管的发射能力和稳定性。LaB₆作为气体放电电极具有寿命长、延迟时间短、放电电流大等优点，可用于重复强流脉冲气体放电的高压高速开关器件。     

气体放电等离子体特性测量I-V曲线不对称性的研究

利用气体放电双探针法研究了等离子体的I-V曲线中的电流I相对于电压V轴交点的不对称性,并提出2种可能的解释:一认为是由于两探针表面积不同引起的;二认为是由于探针所在处等离子体电位不等引起的.本文利用仪器的工艺误差和调换放电管电压的方法,对提出的2种可能原因分别进行验证,并指出第二种解释的合理性,并对其进行了理论分析.     

用图像分析限流和分压接法中滑动变阻器的选取

借助Ux-Rap图像分析得出滑动变阻器的选取原则:控制电路采用限流接法时,要求滑动变阻器的最大阻值与被测电阻的阻值接近,即接近为原则;控制电路采用分压式接法时,滑动变阻器的最大阻值应远小于被测电阻的阻值,故在分压接法中,应选择阻值较小而额定电流较大的滑动变阻器.     

Ab initio study of sodium intercalation into metal oxides

Using the full-potential linearized augmented plane wave (FP-LAPW) method, we have studied the effect of chemistry on the average intercalation voltage (AIV) caused by the Na ions intercalating into transition metal oxides. The effect of transition metal was systematically studied by varying M=Co, Ni and Mn in NaMO₂ and fixing the α-NaFeO₂ layered structure. The effect of the guest atoms into the host material is discussed in terms of the structural and electronic properties. Comparatively to Li intercalation, a significant electron transfer towards transition metal was found. This observation suggests that the transition metal contribute to the AIV determination and confirms the common assumption that intercalated electron reduces M⁴⁺ to M³⁺.     

On the effect of a longitudinal magnetic field on oscillatory characteristics of a subnormal region in discharge in argon

Oscillating nature of current pulses under d.c. excitation in subnormal region with longitudinal magnetic field at pressure range 0.20 torr to 0.85 torr have been studied. The frequency, bandwidth, peak-peak voltage, cut-off current and rise time of the current pulses have been observed with pressure, average tube current and magnetic field. A study of these oscillograms in magnetic field, average tube current and pressure are presented. The probable mechanism for the generation of oscillation based on space-charge field modification with magnetic field is discussed     

Electrochemical instability of bis(trifluoromethylsulfonyl)imide based ionic liquids as solvents in high voltage electrolytes for potassium ion batteries

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Influence of Urbach Energy,Temperature, and Longitudinal Position in the Active Layer on Carrier Diffusion Length in Perovskite Solar Cells

The diffusion length of charge carriers in the active layer of a perovskite solar cell (PSC) of the structure Glass/PEDOT: PSS/CH₃NH₃PbI₃/PC60BM/Al is modelled. It is found that the diffusion length depends on the position x in the active layer measured from the PEDOT: PSS interface, Urbach energy and temperature. By varying the voltage in the range from zero to , it is shown that the dependence of diffusion length on the position x in the active layer reduces at higher voltage. The combined influence of applied voltage and temperature on the diffusion length of charge carriers is investigated and it is found that in the low voltage range the diffusion length is temperature independent, but it becomes significantly temperature dependent at higher voltages. Also, it is found that the diffusion length decreases as the applied voltage increases and this reduction becomes much more significant at higher voltage and temperatures. The combined influence of applied voltage and Urbach energy on diffusion length of charge carriers reveals that the diffusion length decreases when both the applied voltage and Urbach energy increase. However, the reduction in the diffusion length due to the increase in Urbach energy becomes less significant at higher voltage.     

Study of reactive ion etching of Si and SiO2 for CFxCl4−x gases

A parametric study of the etching of Si and SiO₂ by reactive ion etching (RIE) was carried out to gain a better understanding of the etching mechanisms. The following fluorocarbons (FCs) were used in order to study the effect of the F-to-Cl atom ratio in the parent molecule to the plasma and the etching properties: CF₄, CF₃Cl, CF₂Cl₂, and CFCl₃ (FC-14, FC-13, FC-12, and FC-11 respectively). The Si etch rate uniformity across the wafer as a function of the temperature of the wafer and the Si load, the optical emission as a function of the temperature of the load, the etch rate of SiO₂ as a function of the sheath voltage, and the mass spectra for each of the FCs were measured. The temperature of the wafer and that of the surrounding Si load strongly influence the etch rate of Si, the uniformity of etching, and the optical emission of F, Cl, and CF₂. The activation energy for the etching reaction of Si during CF₄ RIE was measured. The etch rate of Si depends more strongly on the gas composition than on the sheath voltage; it seems to be dominated by ion-assisted chemical etching. The etching of photoresist shifted from chemical etching to ion-assisted chemical etching as a function of the F-to-Cl ratio and the sheath voltage. The etch rate of SiO₂ depended more strongly on the sheath voltage than on the F-to-Cl ratio.