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1.
Sub-monolayer and monolayer of lead phthalocyanine deposited on InSb(1 0 0) (4 × 2)/c(8 × 2) surface have been investigated by scanning tunneling microscopy and low energy electron diffraction. Molecules first adsorb on the indium rows of the (4 × 2)/c(8 × 2) structure in the [1 1 0] direction and diffuse at the surface in order to form two-dimensional islands. The molecule-substrate interaction stabilizes the PbPc molecules on the In rows. It weakens the interaction between molecules located in adjacent rows resulting in numerous gliding planes between the molecular chains, in the direction parallel to the rows. At monolayer completion, a long-range one-dimensional order is adopted by the molecules in the [1 1 0] direction.  相似文献   
2.
The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.  相似文献   
3.
The difference in reactivity of the two modifications of InCl in solid state reactions with SnCl2 is discussed. It is explained on the basis of semi‐empirical and ab initio calculations giving the density of states diagrams of InCl and the energies of possible disproportionation reactions. Their general features are discussed on the basis of a simple bonding picture for open‐packed structures involving inert pair elements. A detailed analysis of the DOS distribution allows to pinpoint the observed redox instability to a specific structural feature of α‐InCl.  相似文献   
4.
Surface reconstructions of InGaAs alloys   总被引:1,自引:0,他引:1  
P.A. Bone  G.R. Bell 《Surface science》2006,600(5):973-982
The surface reconstructions of InxGa1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence.  相似文献   
5.
Aryl substituted α-carbonyl bromo-alkynes undergo facile cyclizations to the corresponding substituted 4-methylene-tetrahydrofurans using indium(I) iodide in acetonitrile under sonication in high yields. The reaction is predicted to proceed via a radical process initiated by InI and a plausible radical pathway is suggested.  相似文献   
6.
Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.  相似文献   
7.
《Tetrahedron letters》2004,45(40):7495-7498
A mild and efficient synthesis of β-amino alcohols by aminolysis of epoxides promoted by indium tribromide is described. The methodology is regio- and chemoselective and works well with independence of the epoxide or the aromatic amine used. In addition, the reaction can be carried out in a wide variety of undried solvents under air.  相似文献   
8.
The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield mp = 7.05 × 103kg/m3, d/dT = −0.776 kg/m3·°C, and γmp = 0.568 N/m, dγ/dT = −9.45 × 10−5 N/m·°C. The results for uranium at the melting point are mp = 17.47 × 103 kg/m3 and γmp = 1.653 N/m.  相似文献   
9.
铟—5—Br—PADAP极谱络合吸附波研究   总被引:2,自引:0,他引:2  
  相似文献   
10.
An ordinary plating solution for indium hexacyanoferrate (InHCF) thin film deposition, mainly composed of equal concentrations of In3+ and [Fe(CN)6]3–, usually forms precipitates rapidly when either concentration is higher than few millimolar. This contributes to the plating solution's instability. Moreover, electrodeposited capacities are limited accordingly. In this work, the plating solution's stability and the electrodeposition of InHCF were greatly enhanced by adding a large amount of K+ and/or H+. It was found that a 10-mM plating solution added with 1 M HCl and 1 M KCl could be stored as fresh over a one-week period, whereas an unmodified plating solution became useless within a couple of minutes. Also, such cationic additions, especially adding H+, increased the electrodeposited capacity ca. 18 times at least, as compared with that obtained from the unmodified plating solution. Furthermore, related enhancing mechanisms were proposed and verified. To sum up, this study offers a means for better InHCF electrodeposition and should promote the applications of InHCF films. Electronic Publication  相似文献   
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