Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

Structural and electronic properties of graphite layers grown on SiC(0 0 0 1)

Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ?_B,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate.     

On the influence of the surfactant''s polar group on the local and terminal velocities of bubbles

The local and the terminal velocities, the size and the degree of bubbles’ shape deformations were determined as a function of distance from the position of the bubble formation (capillary orifice) in solutions of n-octyltrimethylammonium bromide, n-octyldimethylphosphine oxide, n-octyl-β-D-glucopyranoside and n-octanoic acid.

These surface-active compounds have different polar groups but an identical hydrocarbon chain (C8) in the molecule. The motion of the bubbles was monitored and recorded using a stroboscopic illumination, a CCD camera, and a JVC professional video. The recorded bubble images were analyzed by the image analysis software. The bubbles accelerated rapidly and their shape was deformed immediately after detachment from the capillary. The extent of the bubbles’ shape deformation (ratio of horizontal and vertical diameters) was 1.5 in distilled water and dropped rapidly down to a level of ca. 1.05–1.03 with increasing surfactant concentration. After the acceleration period the bubbles either attained a constant value of the terminal velocity (distilled water and high concentrations of the solutions), or a maximum in the velocity profiles was observed (low concentrations). The values of the terminal velocity diminished drastically with increasing concentration, from the value of 35 cm/s in water down to about 15 cm/s, while the bubble diameter decreased by ca. 10% only. The surfactant adsorption at the surface of the bubbles was evaluated and the minimum adsorption coverages required to immobilize the bubbles’ surface were determined. It was found that this minimum adsorption coverage was ca. 4% for n-octyldimethylphosphine oxide, n-octyl-β-D-glucopyranoside, n-octanoic acid and 25% for n-octyltrimethylammonium bromide. The difference in the adsorption coverage together with the surfactants’ surface activities indicate that it is mainly the adsorption kinetics of the surfactants that governs the fluidity of interfaces of the rising bubbles.     

Determination of ultra-trace gold in natural water by graphite furnace atomic absorption spectrophotometry after in situ enrichment with thiol cotton fiber

A simple method of determining ultra-trace Au in natural water was presented by using graphite furnace atomic absorption spectrophotometry (GFAAS) after in situ enrichment with thiol cotton fiber (TCF). The sample solution was adjusted to pH 1.5-2.0 with HCl, then the water sample was passed through a column packed with 0.10-0.20 g TCF and the flow rate was controlled at 20-40 ml min⁻¹. The effects of interferences, such as complexing and oxidizing agents and other elements adsorbed on TCF were overcome by chemical treatments prior to the desorption of Au. The adsorbed Au was adsorbed with 2.0 ml hot acid, then it was extracted with 1.00 ml methyl isobutylketone (MIBK). For a 5 l water sample, the detection limit of Au is 0.02 ng l⁻¹. The relative standard deviation (R.S.D.) for the determination of 1.44 ng l⁻¹ Au was 9.4%.The method was applied to determine ultra-trace Au both in suspended phase and soluble phase in natural water, the concentrations of total Au in natural water samples range from 0.51 to 67.82 ng l⁻¹. The recovery of added 0.50-6.00 ng l⁻¹ Au was 80-95%. The method is useful in prospecting for Au deposits by means of hydrogeochemical methods. The enrichment is carried out in the field, and then the determination of Au is completed later in the laboratory.     

元素在石墨炉内石墨探针表面上的原子化机理研究：Ⅶ.锗的原子化机理

本文应用Ｘ－射线衍射，Ｘ－射线光电子能谱，俄歇电子能谱和其它一些实验，考察石墨炉升温过程中氟化锗，锗酸钠在石墨探针表面上的形态变化，阐明了它们的原子化机理：ＧｅＦ２与Ｎａ２ＧｅＯ３首先分解为ＧｅＯ２，ＧｅＯ２还原为ＧｅＯ，后者在＞２４００Ｋ热分解产生自由态的锗原子，ＧｅＦ２和Ｎａ２ＧｅＯ３的原子化均源于ＧｅＯ（ｇ）的气相分解。原子化的升温过程中，在１４００－２４００Ｋ ＧｅＦ２和Ｎａ２ＧｅＯ３都产     

钯作基体改进剂FIA－HG－GFAAS法测定锗及其机理研究

采用钯，钯－镁作基体改进剂，ＦＩＡ－ＨＧ－ＧＦＡＡＳ法成功地测定了锗。灵敏度、精密度和分析速度都得到很大的提高。峰值吸收的特征质量８．０ｐｇ，检出限１０．９ｐｇ，相对标准偏差０．３４％，同时探讨了基体改进剂钯的稳定作用机理及锗在石墨管中的原子化机理。     

Au deposits on graphite: On the nature of high temperature desorption peaks in CO thermal desorption spectra

Due to the discovery of Au as a catalyst for low temperature CO oxidation, the adsorption of CO on Au surfaces has attracted a lot of attention recently. On stepped and rough single crystal surfaces as well as on deposited particles two characteristic desorption states above 100 K have been observed via TPD. We have studied Au deposits on graphite in order to elucidate the nature of these desorption peaks in more detail. For this purpose, Au was deposited at 100 K and 300 K on HOPG as a weakly interacting support. In analogy to other supports, we obtain two desorption states (∼140 K and ∼170 K) whose relative intensities depend strongly on the deposition temperature with the high temperature peak being much more pronounced for the 100 K deposits. After annealing to 600 K, both states drastically lose intensity. XP spectra, on the other hand, show virtually no decrease of the Au 4f intensity as would be expected for desorption or significant changes of the particle morphologies. We conclude that both desorption peaks are defect-related and connected with under-coordinated Au atoms that are lost for the most part upon annealing. These sites could be located at the perimeter of dendritic islands or on small, defect-rich particles in addition to larger particles not adsorbing CO at 100 K. Preliminary STM results are in favour of the second interpretation.     

WLY100型顺序扫描ICP光谱仪设计方案的一些考虑

本文对国产ＷＬＹ１００型顺序扫描ＩＣＰ光谱仪在设计中对单色仪，高频发生器，扫描机构，测光系统，短紫外光域的测量，恒温，气流控制与软件编制等方案的选择作了详尽的阐述，稳妥的方案使研制工作顺利进行，保证整机一次成功。     

溶膜预富集-石墨炉原子吸收法测定痕量钯

强酸性条件下 ,钯 (Ⅱ )与 5 [( 5 氯 2 吡啶 )偶氮 ] 2 ,4 二氨基甲苯 ( 5 Cl PADAT)生成紫红色螯合物 ,该螯合物可与十二烷基苯磺酸钠 (SDBS)生成离子缔合物 ,离子缔合物经 0 .3μm孔径的硝化纤维微孔滤膜富集后 ,于小体积 ( 0 .5mL)的浓硫酸中溶膜 ,用石墨炉原子吸收法 (GFAAS)测定 ,富集倍数可达 2 0 0倍 ,钯含量在 4.69× 1 0 - 1 2 ～ 7.0 9× 1 0 - 9mol/L范围内线性良好 ,检出限为 1 .78×1 0 - 1 2 mol/L。方法用于海水中痕量钯的测定。