无限维奇Hamilton模李超代数的导子

本文首先确定了无限维奇Hamilton模李超代数的生成元集,然后确定了奇Hamilton模李超代数到广义Witt模李超代数的导子空间,进而确定了无限维奇Hamilton模李超代数的导子代数.     

用于先进半导体制程的光刻反向计算技术(ILT)

此篇论文将介绍一个用于半导体光罩上图样设计以及可用于实际生产的光刻反向计算技术（ILT）。在论文中将讨论有关ILT的最新发展，包括在超成像极限协助图样（SRAF）的生成，可增加制程宽容度的ILT，以及如何生成满足光罩生产标准的图样等方面。从内部的研究结果和客户的使用结果可以看出，ILT已经不再只是一种用于研究的工具，而是已经可以用于先进半导体制程的大规模生产。在对各个环节优化之后，ILT可以增加制程的宽容度，同时将光罩的成本控制在可以接受的水平。     

Micro Electrical Impedance Spectroscopy (μEIS) Fabricated on the Curved Surface of a Fine Needle for Biotissue Discrimination

This work presents a novel micro electrical impedance spectroscopy (μEIS) technique that can measure and discriminate the electrical signal responses of biotissues in real time. An EoN (EIS‐on‐a‐needle), EIS on the surface of a fine needle (400 μm in diameter), was fabricated using a newly developed flexible photomask film. The base material of the photomask is parylene‐C, which allows uniform contact on the curved surface of the needle; thus, the designed electrode patterns of the photomask can be transferred onto the needle surface with a high resolution (2.95 % or less in dimensional error). To validate the developed EoN as an electrical sensor, ex vivo experiments with various biotissues—butchered pork (skin, fat, and muscle) and human breast tissues (normal and cancerous)—were conducted by measuring real‐time electrical impedance during a frequency sweep. The conductivities (relative permittivity) of the pork tissues were evaluated by electrical equivalent circuit analysis: 56.6 mS/m (37,800), 68.0 mS/m (74,755), and 74.9 mS/m (26,145) for the skin, fat, and muscle, respectively. Moreover, the normal and cancerous tissues were well distinguished by electrical resistance at 4.04 kHz for various cancer grades (Elston grades 1, 2, and 3). Analysis of the electrical impedance suggests that the EoN can be utilized to diagnose the physiological states of biotissues in clinical use.     

Characterization and reduction of pellicle degradation due to haze formation on leading edge technology photomasks

Since the adoption of deep ultraviolet lithography, time‐dependent haze defects have become an increasingly significant problem for the semiconductor industry as photomask lifetime continues to be shortened due to molecular contamination. With shorter wavelength lithography, the materials and space between the pellicle film and photomask surface can create a highly reactive environment resulting in the formation of haze defects on the photomask. One critical issue has been to understand the chemical mechanism of evolving defects on the photomask triggered by haze formation. This fundamental study was completed in a manufacturing environment in response to a sudden increase of haze defect growth during the transition to new device nodes. Time‐of‐Flight Secondary Ion Mass Spectrometry and Atomic Force Microscopy analysis techniques were essential in characterizing pellicle degradation in parallel with increased haze defect growth on the photomask surface. Extensive chemical and surface topography characterization of pellicle degradation led to a vitally important development and implementation of a design change in the pellicle frame for Flash Memory 3x and 2x nm node critical process layer photolithography. With an increased clearance between the pattern design and pellicle edge, the design modification ultimately brought an immense increase in photomask dose limitation between repell cleans and a reduction in haze growth, thus, reducing production costs and increasing wafer throughput.     

用于先进半导体制程的光刻反向计算技术(ILT)(英文)

此篇论文将介绍一个用于半导体光罩上图样设计以及可用于实际生产的光刻反向计算技术(ILT)。在论文中将讨论有关ILT的最新发展,包括在超成像极限协助图样(SRAF)的生成,可增加制程宽容度的ILT,以及如何生成满足光罩生产标准的图样等方面。从内部的研究结果和客户的使用结果可以看出,ILT已经不再只是一种用于研究的工具,而是已经可以用于先进半导体制程的大规模生产。在对各个环节优化之后,ILT可以增加制程的宽容度,同时将光罩的成本控制在可以接受的水平。     

Photomask Critical Dimension Metrology with Deep-Ultraviolet Microscope

A deep-ultraviolet (UV) microscope can output critical dimension (CD) that is consistent with an aerial image on a wafer even if the cross-sectional profile of the pattern on a photomask is varied. According to theoretical calculation, CD measured by the deep-UV microscope depends on global transmissivity, and so does the aerial image on a wafer if the cross-sectional profile is varied. The results of simulation and experiment indicate that offset between CD measured by deep-UV microscope and CD determined by the aerial image is constant despite variation of the cross-sectional profile.     

A Note on L-double Gradation Fuzzy Topological and L-double Fuzzy Closure Spaces

We prove the existence of both final L-double gradation fuzzy topological spaces and final L-double fuzzy closure spaces. From this fact, we define and study the notions of the L-double quotient spaces and the sum of L-double fuzzy closure spaces. Finally, we study the additivity of two kinds of L-double fuzzy closure spaces.     

一种利用梯度光掩模制备梯度表面的简便方法

以自制杂化双向拉伸聚丙烯/氧化硅(BOPP/SiOx)有机/无机杂化膜为基材,由喷墨打印机直接在杂化膜表面打印色阶图案,制备出对紫外光强度呈梯度透过的梯度光掩模;通过此掩模控制,在双向拉伸聚丙烯(BOPP)和聚对苯二甲酸乙二醇酯(PET)表面实施受限光催化氧化(CPO)光感应羟基化反应、受限光接枝丙烯酸(AA)以及表面...     

Linearity Improvement for Photomask Critical Dimension Metrology with Deep-Ultraviolet Microscope

Linearity improvement by the simulation assist (SA) method for photomask critical dimension (CD) measurement with a deep-ultraviolet (UV) microscope is proposed. With the conventional method, if a measurement pattern on a photomask is insufficiently resolved by the microscope, the CD cannot maintain linearity to the actual pattern size. With the SA method, the lack of the resolution is canceled by an actual image and a simulated image, so that the CD can maintain linearity to the actual pattern size. The results of experiments demonstrate that the SA method improves CD linearity of the conventional method with a deep-UV microscope.