Large‐Area Synthesis of Superclean Graphene via Selective Etching of Amorphous Carbon with Carbon Dioxide

Contamination commonly observed on the graphene surface is detrimental to its excellent properties and strongly hinders its application. It is still a great challenge to produce large‐area clean graphene film in a low‐cost manner. Herein, we demonstrate a facile and scalable chemical vapor deposition approach to synthesize meter‐sized samples of superclean graphene with an average cleanness of 99 %, relying on the weak oxidizing ability of CO₂ to etch away the intrinsic contamination, i.e., amorphous carbon. Remarkably, the elimination of amorphous carbon enables a significant reduction of polymer residues in the transfer of graphene films and the fabrication of graphene‐based devices and promises strongly enhanced electrical and optical properties of graphene. The facile synthesis of large‐area superclean graphene would open the pathway for both fundamental research and industrial applications of graphene, where a clean surface is highly needed.     

Synthesis of Air‐Stable,Volatile Uranium(IV) and (VI) Compounds and Their Gas‐Phase Conversion To Uranium Oxide Films

Four air‐stable, volatile uranium heteroarylalkenolates have been synthesized and characterized by three synthetic approaches and their gas phase deposition to uranium oxide films has been examined.     

Chemical Vapor Deposition of Phase‐Pure Uranium Dioxide Thin Films from Uranium(IV) Amidate Precursors

Homoleptic uranium(IV) amidate complexes have been synthesized and applied as single‐source molecular precursors for the chemical vapor deposition of UO₂ thin films. These precursors decompose by alkene elimination to give highly crystalline phase‐pure UO₂ films with an unusual branched heterostructure.