Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 595707 (2005).     

锑化镓的光助微刻蚀及其表面氧化物的研究

用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解，锑化镓电极在一定电势下生成的氧化膜，用俄歇能谱证明，其主要成分为难溶的氧化锑，此氧化膜的存在抑制了锑化镓的进一步腐蚀，同时亦使锑化镓的半导体光电化学性能大为减弱，通过激光微刻蚀及电子显微镜的观察，在刻蚀剂中添加酒石酸，柠檬酸和氢氟酸等试剂，可使刻蚀形得改善，实验研究了锑化镓的平带电势的测定。     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

基于锑化物二类超晶格的多色红外探测器研究进展

近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。     

Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices

For the design of InAs/GaSb superlattice (SL) heterojunction infrared photodetectors with very low dark current we have extended the standard two-component superlattice empirical pseudopotential method (SEPM) and implemented a four-component model including interface layers. For both models, the calculated bandgap values for a set of SL samples are compared to bandgaps determined by photoluminescence measurements. While the bandgap resulting from the two-component model agrees well with experimental data for SL structures with individual layer thicknesses of 7 monolayers and more, we show that for SLs with thinner GaSb layers the four-component SEPM model is accurate, when the As-content in the interface and barrier layers is included in the model.     

用正电子研究半导体材料GaSb的缺陷

用正电子寿命谱和符合多普勒技术研究了电子辐照过的GaSb样品．揭示出原牛未掺杂GaSb样品中存在单空位型VGa相关缺陷，具有284ps左右的寿命值．电子辐照能使这种缺陷的浓度增大，使平均寿命值从辐照前的265Ps增大到辐照后的268ps．低温符合多普勒展宽实验结果表明退火后的电子辐照过的原生未掺杂GaSb样品中仍然存在反位缺陷Gasb．掺Zn、Te样品的实验也证实电子辐照在GaSb样品中会引入VGa，284 ps类型的缺陷．     

Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates

Self-assembled GaSb quantum dots (QDs) with a photoluminescence wavelength longer than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the surface of the GaSb QDs. This result means that GaSb can thus join InAs or GaInAs as a suitable material for QD lasers for optical communications.     

多层GaSb(QDs)/GaAs生长中量子点的聚集及发光特性

通过对多层GaSb量子点的生长研究,发现随着生长层数的增加,量子点尺寸逐渐变大,密度没有明显变化,并且量子点出现了聚集现象;当层数增加到一定数量、量子点聚集到一定大小时,聚集的量子点处会出现空洞。这些现象表明,各层量子点在生长过程中存在关联效应,并且GaAs层不能很好地覆盖在聚集的量子点之上,在继续生长其它量子点层时,聚集的量子点处在高温下出现GaSb的蒸发,从而出现空洞。PL谱出现了很宽的量子点发光峰,这很可能是由于多层量子点在生长时大小分布较宽而导致的结果。