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《Surface and interface analysis : SIA》2004,36(1):23-29
We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing‐incidence x‐ray photoelectron spectroscopy, neutron reflectometry and spectroscopic ellipsometry. Samples with nominal thicknesses of 3–7 nm were characterized by XPS with grazing‐incidence x‐rays at 1.8 keV, by cold neutron reflectometry (λ = 0.475 nm) and by spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and grazing‐incidence XPS, with slightly lower values for the neutron reflectometry. The role of surface contamination in each type of measurement is discussed. Published in 2004 by John Wiley & Sons, Ltd. 相似文献
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