The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB

Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C₆₀) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.     

Retracted: Mass analysis by Ar‐GCIB‐dynamic SIMS for organic materials

Generally, dynamic secondary ion mass spectrometry (SIMS) has been mainly used as one of the most powerful tools for inorganic mass analysis. On the other hand, an Ar gas cluster ion beam (GCIB) has been developed and spread as a processing tool for surface flattening and also a projectile for time‐of‐flight (ToF) SIMS. In this study, we newly introduced an Ar‐GCIB as a primary ion source to a commercially available dynamic SIMS apparatus, and investigated mass spectra of amino acid films (such as Arginine and Glycine) and polymer films (Polyethylene: PE and Polypropylene: PP) as organic model samples. As a result, each characteristic fragment peak indicating the original molecular organic structure was observed in the acquired mass spectra. In addition, their own molecular ions of the amino acids were also clearly observed. Mass spectra of PE/PP blended‐polymer films acquired using Ar‐GCIB‐dynamic SIMS could be identified between pure PE and PE:PP = 1:3 mixture by applying principal component analysis (PCA).     

Depth profiling organic/inorganic interfaces by argon gas cluster ion beams: sputter yield data for biomaterials,in‐vitro diagnostic and implant applications

Argon gas cluster ion beam sources are likely to become much more widely available on XPS and SIMS instruments in the next few years. Much attention has been devoted to their ability to depth profile organic materials with minimum damage. What has not been the focus of attention (possibly because it has been very difficult to measure) is the large ratio of sputter yield for organic materials compared with inorganic materials using these sources and the special opportunities this presents for studies of organic/inorganic interfaces. Traditional depth profiling by monatomic argon ions introduces significant damage into the organic overlayer, and because sputter rates in both organic and inorganic are similar for monatomic ions the interface is often ‘blurred’ due to knock‐on and other damage mechanisms. We have used a quartz crystal technique to measure the total sputter yield for argon cluster ions in a number of materials important in medical implants, biomaterials and diagnostic devices, including polymethyl methacrylate, collagen, hydroxyapatite, borosilicate glass, soda lime glass, silicon dioxide and the native oxides on titanium and stainless steel. These data fit a simple semi‐empirical equation very well, so that the total sputter yield can now be estimated for any of them for the entire range of cluster ion energy typical in XPS or SIMS. On the basis of our total sputter yield measurements, we discuss three useful ‘figures‐of‐merit’ for choosing the optimum cluster ion energy to use in depth profiling organic/inorganic samples. For highest selectivity in removing the organic but not the inorganic material the energy‐per‐atom in the cluster should be below 6 eV. A practical balance between selectivity and reasonably rapid depth profiling is achieved by choosing a cluster ion energy having between around 3 and 9 eV energy‐per‐atom. Copyright © 2013 John Wiley & Sons, Ltd.     

Argon cluster size‐dependence of sputtering yields of polymers: molecular weights and the universal equation

An analysis is provided of the data of Cristaudo et al. for the sputtering yields of polystyrene and polymethylmethacrylate by argon cluster ion beams as a function of their molecular weight. This analysis is made using the universal sputtering equation of Seah to evaluate the effect of the end‐group density on the parameter A. This parameter is thought to be related to the average energy per atom (excluding hydrogen) to liberate fragments and it is shown that A decreases as the end‐group density rises in the manner expected. Equations are provided relating A to the molecular weight or the end‐group density that are obeyed for both materials. Copyright © 2014 Crown Copyright.     

Observations on X‐ray enhanced sputter rates in argon cluster ion sputter depth profiling of polymers

Traditionally polymer depth profiling by X‐ray photoelectron spectroscopy (XPS) has been dominated by the damage introduced by the ion beam rather than the X‐rays. With the introduction of polyatomic and especially argon gas cluster ion‐beam (GCIB) sources for XPS instruments, this is no longer the case, and either source of damage may be important (or dominate) under particular conditions. Importantly, while ion‐beam damage is a near‐surface effect, X‐ray damage may extend micrometres into the bulk of the sample, so that the accumulation of X‐ray damage during long depth profiles may be very significant. We have observed craters of similar dimensions to the X‐ray spot well within the perimeter of sputter craters, indicating that X‐rays can assist GCIB sputtering very significantly. We have measured experimentally sputter craters in 13 different polymers. The results show that X‐ray exposure can introduce much more topography than might previously have been expected, through both thermal and direct X‐ray degradation. This can increase the depth of a crater by a remarkable factor, up to three in the case of poly‐L‐lactic acid and polychlorotrifluorothylene under reasonably normal XPS conditions. This may be a major source of the loss of depth resolution in sputter depth profiles of polymers. Copyright © 2012 John Wiley & Sons, Ltd.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.