Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Electron–hole complexes in self-assembled quantum dots in strong magnetic fields

We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T.     

Decay kinetics of the green emission in tungstates and molybdates

Luminescence characteristics of a number of undoped and variously doped PbWO₄ crystals were studied at 0.4–400 K by the time-resolved spectroscopy and compared with those of ZnWO₄,CdWO₄ and PbMoO₄ crystals. Two types of green emission centres are detected in PbWO₄ crystals. The centres of the first type are responsible for the low-temperature 2.3–2.4 eV emission observed under excitation around 3.90–3.95 eV. The structure and parameters of their relaxed excited states were determined. It was concluded that the origin of defects responsible for the green emission of the first type could vary for different crystals. The centres of the second type with the emission around 2.5 eV appear in crystals containing oxygen vacancies after the thermal destruction of Pb⁺-WO₃ centres at T>180 K. Decomposition of the exciton and various defect-related states was also studied, and activation energies of this process were calculated.     

Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks

We investigated theoretically the influence of strain on the exciton in both single and three vertically coupled self-assembled quantum dot systems in the presence of a perpendicular magnetic field. For the single disk, we find that the heavy-hole exciton is the ground state, while for the system of three stacked disks, the light hole state was found to be lower in energy. Results for the diamagnetic shift were compared with experimental results.     

Anderson transition in dilute systems with pure exponential interactions

Summary Assuming a completely disordered lattice it is shown that all the states are localized when the disorder parameterx=a ₀/0 reachesthe value 0.31, wherea is the mean atomic separation anda ₀ is the Bohr radius.     

Zero bias anomaly in the density of states of low-dimensional metals

We consider the effect of Coulomb interactions on the average density of states (DOS) of disordered low-dimensional metals for temperatures T and frequencies ω smaller than the inverse elastic life-time 1/τ. Using the fact that long-range Coulomb interactions in two dimensions (2d) generate ln²-singularities in the DOS ν(ω) but only ln-singularities in the conductivity σ(ω), we can re-sum the most singular contributions to the average DOS via a simple gauge-transformation. If σ(ω) > 0, then a metallic Coulomb gapν(ω) ∝ |ω|/e ⁴ appears in the DOS at T = 0 for frequencies below a certain crossover frequency Ω ₂ which depends on the value of the DC conductivity σ(0). Here, - e is the charge of the electron. Naively adopting the same procedure to calculate the DOS in quasi 1d metals, we find ν(ω) ∝ (|ω|/Ω ₁)^1/2exp(- Ω ₁/|ω|) at T = 0, where Ω ₁ is some interaction-dependent frequency scale. However, we argue that in quasi 1d the above gauge-transformation method is on less firm grounds than in 2d. We also discuss the behavior of the DOS at finite temperatures and give numerical results for the expected tunneling conductance that can be compared with experiments. Received 28 August 2001 / Received in final form 28 January 2002 Published online 9 July 2002     

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.     

聚合物电致发光材料研究进展

本文较详细地综述了聚合物电致发光材料的研究进展，重点介绍了聚对苯撑乙烯（ＰＰＶ），并提出了有关聚合物电致发光材料及器件构造研究的一些观点。     

Excition dynamics in the J-aggregates of a carbocyanine dye

We report on the exciton dynamics in the J-aggregating dye 5,5, 6,6-tetrachloro-1,1-diethyl-3,3-di(4-sulfobutyl)-benzimidazolocarbocyanine which is known readily to form J-aggregates, even at room temperature and at a low concentration. We performed a series of time-correlated singlephoton-counting experiments at different emission wavelengths and at different temperatures in the range between 1.5 and 125 K. Additionally, the temperature dependence of the relative fluorescence quantum yield was determined.