Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

Electron–hole complexes in self-assembled quantum dots in strong magnetic fields

We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T.     

Decay kinetics of the green emission in tungstates and molybdates

Luminescence characteristics of a number of undoped and variously doped PbWO₄ crystals were studied at 0.4–400 K by the time-resolved spectroscopy and compared with those of ZnWO₄,CdWO₄ and PbMoO₄ crystals. Two types of green emission centres are detected in PbWO₄ crystals. The centres of the first type are responsible for the low-temperature 2.3–2.4 eV emission observed under excitation around 3.90–3.95 eV. The structure and parameters of their relaxed excited states were determined. It was concluded that the origin of defects responsible for the green emission of the first type could vary for different crystals. The centres of the second type with the emission around 2.5 eV appear in crystals containing oxygen vacancies after the thermal destruction of Pb⁺-WO₃ centres at T>180 K. Decomposition of the exciton and various defect-related states was also studied, and activation energies of this process were calculated.     

Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks

We investigated theoretically the influence of strain on the exciton in both single and three vertically coupled self-assembled quantum dot systems in the presence of a perpendicular magnetic field. For the single disk, we find that the heavy-hole exciton is the ground state, while for the system of three stacked disks, the light hole state was found to be lower in energy. Results for the diamagnetic shift were compared with experimental results.     

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.     

聚合物电致发光材料研究进展

本文较详细地综述了聚合物电致发光材料的研究进展，重点介绍了聚对苯撑乙烯（ＰＰＶ），并提出了有关聚合物电致发光材料及器件构造研究的一些观点。     

Excition dynamics in the J-aggregates of a carbocyanine dye

We report on the exciton dynamics in the J-aggregating dye 5,5, 6,6-tetrachloro-1,1-diethyl-3,3-di(4-sulfobutyl)-benzimidazolocarbocyanine which is known readily to form J-aggregates, even at room temperature and at a low concentration. We performed a series of time-correlated singlephoton-counting experiments at different emission wavelengths and at different temperatures in the range between 1.5 and 125 K. Additionally, the temperature dependence of the relative fluorescence quantum yield was determined.     

电极材料对NPB/Alq3有机电致发光器件性能的影响

采用不同材料作为有机电致发光器件(OELDs)的电极, 制备了基本结构为[阳极/NPB(40 nm)]/Alq3(50 nm)/阴极]的异质结双层器件, 并通过改变OELDs器件的阴极或阳极来研究电极材料对器件光电性能的影响. 研究结果表明, 各器件电流-电压(I-V)关系的基本特征与陷阱电荷限制电流(TCLC)机制的拟合情况相符. 由于有机材料本身能级的无序性以及载流子迁移率对温度和电场的依赖性, 不同电极的载流子注入能力与其功函数并无直接关系. 双层器件中由于空穴传输层的引入, 使得载流子复合区域位于有机层异质结界面处, 降低了金属阴极对激子的猝灭作用, 从而大大提高了器件性能. 此外, 金属电极OLEDs器件结构具有的微腔效应会导致发射光谱的位移和谱峰宽度变窄, 这表明通过对金属电极的表面改性和优化可使器件性能超过常规结构的器件.     

Synthesis and absolute configuration of (1S,8S)-as-hydrindacene-1,8-diol as determined by the circular dichroism exciton chirality method

2,3,6,7-Tetrahydro-as-indacene-1,8-dione 4 was prepared in 4 steps starting from 2-methyl-furan by modification of a literature procedure. Appliance of Noyori’s asymmetric transfer hydrogenation, resulted in (1S,8S)-1,2,3,6,7,8-hexahydro-as-indacene-1,8-diol 5 in high yield (81%) and excellent enantioselectivity (>99% ee) or (8S)-8-hydroxy-3,6,7,8-tetrahydro-2H-as-indacen-1-one 6 in moderate yield (58%) and equally high enantioselectivity (98.5% ee), depending on the conditions. The asymmetric reduction was expected to yield the (S)-alcohols using the (S,S)-Ts-DPEN ligand, which was confirmed by the appliance of the exciton chirality method on the corresponding bis(p-dimethylamino)benzoate 7.