排序方式: 共有1条查询结果,搜索用时 0 毫秒
1
1.
Keunjoo Kim Hong Seub Kim Jae Yon Kim Young Hee Lee Hyung Jae Lee Hwack Joo Lee Hyun Ryu 《Journal of Solid State Electrochemistry》1997,1(3):221-226
The interdiffusion in a low-strained Si0.93Ge0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier
of 1.81 eV with a diffusion constant of 4.3 × 10−5 cm2/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the
growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration
gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three
groups, depending on the Ge mole fraction x. For x < 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 < x < 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x > 0.4, Si atoms can be diffused into the alloy.
Received: 22 April 1997 / Accepted: 4 June 1997 相似文献
1