Investigation of the effect of CdCl2 processing on vacuum deposited CdS/CdTe thin film solar cells by DLTS

Thin film CdS/CdTe solar cells have been prepared by conventional vacuum deposition technique. Deep level transient spectroscopy (DLTS), temperature and frequency dependent capacitance-voltage (C-V) measurements were utilised to investigate the performance limiting defect states in the CdTe layer subjected to the post deposition treatments such as CdCl₂-dipping and/or annealing in air. Five hole traps, all of which have been previously reported in the literature, were identified in as-grown CdTe at 0.19, 0.20, 0.22, 0.30 and 0.40 eV above the valence band. A single hole trap level has been evidenced at 0.45 eV after both post deposition heat and CdCl₂ treatments.     

Prototype of immunochromatographic assay strips using colloidal CdTe nanocrystals as biological luminescent label

Colloidal semiconductor nanocrystals have attracted considerable attention as a novel biological luminescent label. The bioinorganic conjugates of luminescent CdTe nanocrystals and protein, including CdTe/BSA (bovine serum albumin) and CdTe/MAB (mouse monoclonal antibody against hepatities B surface antigen), were formed via electrostatic/coordination self-assembly. Pure CdTe nanocrystals, CdTe/BSA and CdTe/MAB were used in the immunochromatographic assay experiments, respectively. And the results indicated that CdTe nanocrystals could be used and developed as a novel label with good stability, high sensitivity and facile determination of several analytes in immunochromatographic assay strips.     

XPS定量分析及其在CdTe（Ⅲ）面识别化学物种中的应用

我们用谱仪能量传输函数修正的相对原子灵敏度因子获得了ＸＰＳ定量数据。通过将定量结果与结合能的化学位移相结合的方法，分析了ＣｄＴｅ表面的两个氧化过程，结果表明，机械抛光样品表面的构成是：６６％ＣｄＴｅ，２８．９％的Ｃｄ（ＯＨ）２和５．１％ＴｅＯｘ（Ｘ＞２），而经化学抛光的表面构成是∶８４．４％的ＴｄＴｅＯ４和１５．６％ＴｅＯｘ（Ｘ＞１）。     

Stable structure and effects of sulfur in CdTe/CdS heterojunctions

Structural and electronic properties of S in the CdTe/CdS(0001) interface are studied using the density functional theory. The interstitial S atom may induce the inversion of the surface Cd atoms and sublayer Te atoms of the Cd‐terminated surface, while S atoms may adsorb at the top sites, substitute Te atoms or accumulate at the voids inside the Te‐terminated (111) CdTe surface. Isovalent substituting S for Te in the CdTe(111)/CdS(0001) heterojunctions can reduce the strain arising from lattice mismatch and cause a reduction of interface states, so it may be better for solar cells. Copyright © 2011 John Wiley & Sons, Ltd.     

Synthesis of cysteamine-coated CdTe quantum dots and its application in mercury (II) detection

High-quality cysteamine-coated CdTe quantum dots (CA-CdTe QDs) were successfully synthesized in aqueous phase by a facile one-pot method. Through hydroxylamine hydrochloride-promoted kinetic growth strategy, water-soluble CA-CdTe QDs could be obtained conveniently in a conical flask by a stepwise addition of raw materials. The photoluminescence quantum yield (PL QY) of the obtained QDs reached 9.2% at the emission peak of 520 nm. The optical property and the morphology of the QDs were characterized by UV–vis absorption spectra, photoluminescence spectra (PL) and transmission electron microscopy (TEM) respectively. Furthermore, the fluorescence of the resultant QDs was quenched by copper (II) (Cu²⁺) and mercury (II) (Hg²⁺) meanwhile. It is worthy of note that to separately detect Hg²⁺, cyanide ion could be used to eliminate the interference of Cu²⁺. Under the optimal conditions, the response was linearly proportional to the logarithm of Hg²⁺ concentration over the range of 0.08–3.33 μM with a limit of detection (LOD) of 0.07 μM.     

Effect of thickness of CdTe/Ge heterojunction photodetectors on optoelectronic properties

The influence of the thickness of CdTe/n-Ge heterojunction photodetectors on I–V curves was studied experimentally and theoretically. The thicknesses of the CdTe thin films were 110, 130, 150, and 200 nm. The power intensity of illumination was 150 mW/cm². Increasing the thickness led to an increase in photocurrent.     

Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an important midgap level E_C−0.74 eV in CdTe and Cd_1−xZn_xTe (x<0.1), the materials of choice in today’s X-ray and gamma ray detector technology. We confirmed the direct correlation between Y-emission and the dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10⁵ cm⁻²). Our results correlate with recent findings that dislocation-induced defects and their clusters degrade charge collection in radiation detectors. Photoluminescence of midgap levels can serve as a tool to identify areas of degraded performance in semi insulated CdTe and CdZnTe crystals for radiation detectors.     

3-巯基异丁酸衍生物对碲化镉量子点水相合成的影响

为探索适宜制备粒径分布窄、荧光量子产率高、发光区域在红光至近红外光区段的量子点的巯基酸的条件, 我们研究了三类3-巯基异丁酸(MIBA)衍生物在以亚碲酸钠为碲源的水相法水热制备CdTe量子点中的影响. 这三类衍生物包括设计合成的主链亲水性衍生物3-巯基异丁酰甘氨酸(MIBGly)、3-巯基异丁酰-3-氨基丙酸(MIBAPA)和3-巯基异丁酰天冬氨酸(MIBAsp), 支链亲水性衍生物N-乙酰基半胱氨酸(ACys)和支链疏水性衍生物3-巯基-2-甲基丁酸(MMBA)和3-巯基-2,2-二甲基丙酸(MDMPA). 以这三类MIBA 衍生物为修饰剂时,CdTe量子点均能够保持MIBA体系较窄的荧光半峰宽. 采用亲水性的MIBA衍生物(MIBGly、MIBAPA、MIBAsp和ACys)比采用疏水性的MIBA衍生物(MMBA和MDMPA)更有利于制备发射波长较长的量子点. 采用支链亲水性的MIBA衍生物((ACys)比采用主链亲水性的MIBA衍生物(MIBGly、MIBAPA和MIBAsp)更容易获得高荧光量子产率的量子点.     

(Yb3+, Mn2+) Co-doped CdTe nanocrystals with enhanced quantum yields and red-shift emission

We prepared the nanocrystals (NCs) of CdTe, CdTe:Yb, and CdTe:Yb, Mn vis water phase synthesis and examined their structural, morphological, and optical properties. All NCs have a particle diameter of about 2–4 nm, and the monodispersed, uniform spherical, cubic structure of the CdTe NC remains largely unchanged after the doping with Yb and Mn. According to the X-ray diffraction results, the CdTe, CdTe:Yb, and CdTe:Yb, Mn NCs all have a cubic structure, and the diffraction peak of CdTe:Yb NC is at a lower 2θ angle compared with that of the CdTe NC. With the CdTe NC as the reference, the UV–Vis absorption of the CdTe:Yb and the CdTe:Yb, Mn NCs exhibits a blueshift and a redshift, and the emission of CdTe:Yb and CdTe:Yb, Mn has a blueshift of about 12 nm and a redshift of about 73 nm, respectively. The CdTe:Yb, Mn NCs have higher quantum yields than the CdTe:Yb NC, and the quantum yield is the highest when CdTe is doped with 1:1 Mn²⁺/Yb³⁺. In addition, both the CdTe:Yb and CdTe:Yb, Mn NCs have a shorter fluorescence lifetime than the CdTe NC.