铝掺杂针铁矿的制备、表征及吸附氟的特性

水热条件下制备了针铁矿（Goe）和几种铝掺杂针铁矿（Goe-Al_0.1,Goe-Al_0.2和Goe-Al_0.4）,用X射线衍射（XRD）、扫描电镜（SEM）、氮气物理性吸附、酸碱滴定等手段对样品进行了表征,并研究了它们对氟离子的吸附特性。结果表明,随着铝掺杂量的增加,铝掺杂针铁矿的结晶度不断减弱、颗粒的长度不断减小。4种样品的微孔表面积、孔体积和表面分形度都表现为Goe < Goe-Al_0.1 < Goe-Al_0.2 < Goe-Al_0.4,而孔径分布表现为相反的顺序。Goe、Goe-Al_0.1、Goe-Al_0.2和Goe-Al_0.4的电荷零点（PZC）分别为8.2、8.3、8.5和8.7,pH=5.0时它们的表面电荷量分别为0.66、0.83、1.03和1.19 mmol·g^-1。准二级动力学模型适合描述4种样品对氟的吸附动力学过程,表明化学吸附是主要作用机制。一位Langmuir模型可较好的拟合等温吸附数据（R²为0.967~0.981）,二位Langmuir模型对等温吸附数据的拟合度更高（R²为0.982~0.995）,而Freundlich模型的拟合度较低（R²为0.877~0.912）。初始pH=5.0时,Goe、Goe-Al_0.1、Goe-Al_0.2和Goe-Al_0.4对氟的最大吸附容量分别为8.83、10.24、11.72和12.86 mg·g^-1。可见,铝掺杂针铁矿对土水环境中氟的吸附容量高于纯针铁矿。     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes.     

Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by RF magnetron sputtering method under different substrate temperatures. The microstructural, electrical and optical properties of AZO films were investigated in a wide temperature range from room temperature up to 350 °C by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), High-Resolution Transmission Electron Microscopy (HRTEM), Hall measurement, and UV–visible meter. The nature of AZO films is polycrystalline thin films with hexagonal wurtzite structure and a preferred orientation along c-axis. The crystallinity and surface morphologies of the films are strongly dependent on the growth temperature, which in turn exerts a great effect on microstructural, electrical and optical properties of the AZO films. The atomic arrangement of AZO film having an wurtzite structure was indeed identified by the HRTEM as well as the Selected Area Electron Diffraction (SAED). The defect density of AZO film was investigated by HRTEM. The film deposited at 100 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.6 × 10⁻⁴ Ω cm. The average transmission of AZO films in the visible range is all over 85%. More importantly, the low-resistance and high-transmittance AZO film was also prepared at a low temperature of 100 °C.     

Structures, chemical bonding, magnetisms of small Al-doped zirconium clusters

The geometrical and electronic properties of small Al-doped Zrn−1 and host Zrn clusters (n=2-8) are investigated with hybrid HF/DFT functional: B3LYP. For the most favorable configurations of Zrn−1Al clusters, the Al atom prefers to be located on the surface of host zirconium clusters. The isomers that correspond to low coordination number of Zr-Al bonds are found to be more stable. The doping of Al atom in Zrn−1 clusters improves the chemical activities of host clusters. The Zr₅, Zr₇, Zr₄Al and Zr₆Al clusters behave the stronger stabilities relative to their respective neighbors. The strong s-d hybridizations are presented in all bonding Zr atoms. The values of WBI together with AIM analysis suggest that the Zr-Zr interactions are stronger than those between Zr and Al atoms. The doping of Al atom results into the decrease of spin magnetic moments for host zirconium clusters. The moments are mainly derived from the 4d electrons of bonding Zr atoms.     

Deposition of Ni, Ag, and Pt-based Al-doped ZnO double films for the transparent conductive electrodes by RF magnetron sputtering

Ni, Ag, and Pt-based Al-doped ZnO (AZO) films have been deposited as transparent conductivity layers on quartz by RF magnetron sputtering and characterized by X-ray diffraction, Hall measurement, optical transmission spectroscopy, scanning electron microscopy (SEM). The deposition of thicker metal layer in double layers resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. A film consisting of AZO (250 nm)/Ni (2 nm) double structure, exhibits a sheet resistance of 21.0 Ω/sq, a high transmittance of 76.5%, and characterize good adhesion to substrate. These results make the satisfactory for GaN-based light-emitting diodes (LEDs) and solar cells with metal-based AZO double films as current spread layers.     

锂离子正极材料LiCo1-xMgxMnO4与LiCo1-xAlxMnO4 (x = 0, 0.02, 0.05, 0.1)的制备及其电化学性能

采用固相法合成掺杂镁和铝尖晶石LiCoMnO₄材料,研究镁和铝掺杂量对尖晶石LiCoMnO₄电极的初始容量、放电平台以及循环性能的影响. 利用扫描电子显微镜、粉末X-射线衍射仪观察分析材料形貌及结构. 结果表明,所合成材料的粒径分布均匀,结晶性较佳. LiCoMnO₄电极初始容量为87.0 mAh.g^-1,少量镁或铝掺杂使电极初始容量有所增加,LiCo_0.98Mg_0.02MnO₄和LiCo_0.98Al_0.02MnO₄电极初始容量分别为91.3和93.6 mAh.g^-1,提高了其5 V放电平台的比例,过量掺杂则其容量降低. 此外,掺杂Al显著改善了LiCoMnO₄电极的循环性能,而掺杂镁对电极的循环性能其影响不明显.     

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods

Three-dimensional （3D） nanostructures in thin film solar cells have attracted significant attention due to their appli- cations in enhancing light trapping. Enhanced light trapping can result in more effective absorption in solar cells, thus leading to higher short-circuit current density and conversion efficiency. We develop randomly distributed and modified ZnO nanorods, which are designed and fabricated by the following processes： the deposition of a ZnO seed layer on sub- strate with sputtering, the wet chemical etching of the seed layer to form isolated islands for nanorod growth, the chemical bath deposition of the ZnO nanorods, and the sputtering deposition of a thin Al-doped ZnO （ZnO：Al） layer to improve the ZnO/Si interface. Solar cells employing the modified ZnO nanorod substrate show a considerable increase in solar energy conversion efficiency.     

pH值对溶胶-凝胶法制备的掺铝氧化锌薄膜光电性能的影响

采用溶胶-凝胶法在普通载玻片上制备出c轴择优取向的ZnO: Al(ZAO)透明导电薄膜,研究了溶胶pH值对其结构、表面形貌、电学和光学性能的影响.结果表明:随着pH值的降低晶粒尺寸增大;当溶胶pH值从8.4降低到6.8时,薄膜的电阻率先降低而后略有升高,当pH值为7.2时其电阻率达到最小值2.6×10-3 Ω·cm,进一步分析表明,溶胶pH值的变化影响了薄膜晶界散射,而后者又使载流子迁移率发生了变化;薄膜的透光率在可见光部分随着pH值的降低而升高,而禁带宽度则从3.36 eV降到3.32 eV.