聚4-重氮基苯乙烯与聚苯乙烯磺酸钠的自组装

1991年Ｄｅｃｈｅｒ等将带相反电荷的聚电解质 ,于水溶液中交替沉积在片基上 ,制备了多层超薄膜[1] ,这种制膜方法现称为静电自组装 .它操作简单 ,无需专用设备 ;一般在水体系进行 ,对环境友好 ;静电力比范德华力强 ,使它比ＬＢ膜稳定 ,所以近年来有很大发展[2 ] .现在自组装成膜驱动力已从静电力扩展到氢键力、电荷转移相互作用、疏水相互作用等 ,用于组装的组分也从聚电解质扩展到多官能团小分子、胶体粒子、无机纳米颗粒 ,ＤＮＡ、蛋白质等生物大分子等[3～ 11] .虽然自组装膜比ＬＢ膜稳定 ,但它也不耐极性溶剂、电解质水溶液等侵蚀 .如…     

Influence of Al-doped ZnO and Ga-doped ZnO substrates on third harmonic generation of gold nanoparticles

Principal role of substrate types on the nonlinear optical properties of Au NP was investigated. Third harmonic generation (THG) studies were carried out for Au NP deposited on the Al-doped ZnO (AuNP/AZO) and Ga-doped ZnO (AuNP/GZO) substrates at fundamental wavelength of 20 ns Er:glass laser (generating at 1540 nm wavelength) during photostimulation by the 532 nm 15 ns laser pulses. Sizes of Au NP were 5 nm, 10 nm, 20 nm, and 30 nm. The output signal was registered at 513 nm. The photoinduced power density was increased from 0 up to 800 MW/cm². So in our work we explore the role of the substrate on the optically stimulated non-linear optical properties during simultaneous photo stimulation near the inter-band transition. The results were studied depending on the type of substrate and the sizes of the deposited nanoparticles. The analysis was done within a framework of interaction between the photoinduced light and SPR wavelengths. Control of the photoinduced temperature was done.     

拓扑指数法研究稀土显色剂结构与钇显色反应灵敏度的关系

本文计算了二十种不对称色酸双偶氮膦酸型显色剂的Am指数, 并将其与钇进行显色反应的灵敏度进行相关性研究, 讨论了显色剂结构对显色反应灵敏度的影响,预报了几种显色剂与钇显色反应的灵敏度, 取得较为满意的结果。     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Thermal annealing effects on the dynamic photoresponse properties of Al-doped ZnO nanowires network

In this study, UV photodetectors based on a network of aluminium-doped zinc oxide (AZO) nanowires were manufactured at a low cost; for this purpose, a fast and simple fabrication process that involved dropping nanowires dispersion solution was employed instead of the conventional e-beam lithography process that is used to manufacture single nanowire–based UV photodetectors. It was demonstrated that nanowire network–based UV photodetectors provide a much faster UV photoresponse than conventional single nanowire–based UV photodetectors. The fast UV photoresponse of the fabricated UV photodetector can be attributed to the fact that the potential barriers formed in the nanowire network junctions effectively block the flow of electrons during the process of photocurrent decay. Furthermore, the UV photoresponse under illumination by a 254 nm UV source was studied as a function of the annealing temperature of the AZO nanowires network at a bias of 5 V. The fabricated UV photodetector showed the fastest response of 2 s to UV illumination in air when the sample was annealed in air for 1 h at 300 °C.     

Fabrication and characterization of Zn1−xAlxO nanoparticles by DC arc plasma

In this paper we have introduced a simple method for the fabrication of aluminum doped zinc oxide (AZO) nanoparticles. The Zn_1−xAl_xO nanoparticles with different concentrations of Al (x=0.01, 0.03, 0.06, 0.09, 0.12) were fabricated successfully by this method. The samples were analyzed by the use of several techniques such as SEM, EDX, XRD, PL and UV-vis spectroscopy. The SEM images showed that the fabricated nanoparticles had spherical shapes. The XRD patterns of the samples indicated that the Al atoms substituted in the Zn positions in the crystal lattice of ZnO and there were some changes in the lattice parameters. A blue shift in the λ_max of the absorption and a red shift in the λ_max of the emission were observed. The results also indicated that the amount of shifts had a direct relationship with the changes in the lattice parameters.     

偶氮基染料掺杂薄膜的双光子图象存储

研究了偶氮基染料掺杂薄膜ＭＯ－ＰＶＡ和ＥＯ－ＰＶＡ的双光子存储特性。在对薄膜用Ａｒ＾＋激光作预激发下实现了Ｈｅ－Ｎｅ激光的红光存储。获得了实时和短时存储照片。光电记录存储曲线，分析了双光四能级系统的存储机制。实现确定了最佳预激发功率约为０．２８Ｗ／ｃｍ＾２，最小Ｈｅ－Ｎｅ光可存储功率密度低于０．２Ｗ／ｃｍ＾２。     

Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition

Highly transparent conductive Al₂O₃ doped zinc oxide (AZO) thin films have been deposited on the glass substrate by pulsed laser deposition technique. The effects of substrate temperature and post-deposition annealing treatment on structural, electrical and optical properties of AZO thin films were investigated. The experimental results show that the electrical resistivity of films deposited at 240 °C is 6.1 × 10⁻⁴ Ω cm, which can be further reduced to as low as 4.7 × 10⁻⁴ Ω cm by post-deposition annealing at 400 °C for 2 h in argon. The average transmission of AZO films in the visible range is 90%. The optical direct band gap of films was dependent on the substrate temperature and the annealing treatment in argon. The optical direct band gap value of AZO films increased with increasing annealing temperature.     

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Quasi-crystal aluminum-doped zinc oxide (AZO) films were prepared by in situ radio frequency (RF) magnetron sputtering (sputtering without annealing) on glass substrates. The influence of deposition parameters on the optoelectronic and structural properties of the in situ deposited quasi-crystal AZO films was investigated in order to compare resulting samples. X-ray diffraction (XRD) patterns show that the quasi-crystal AZO thin films have excellent crystallization improved with increase of the RF power and substrate temperature, with an extremely preferential c-axis orientation exhibit sharp and narrow XRD pattern similar to that of single-crystal. Field emission scanning electron microscopy (FESEM) images show that quasi-crystal AZO thin films have uniform grains and the grain size increase with the increase of RF power and substrate temperature. Craters of irregular size with the columnar structure are observed in the quasi-crystal AZO thin films at a lower substrate temperature while many spherical shaped grains appeared at a higher substrate temperature. The average optical transmittance of all the quasi-crystal AZO films was over 85% in the 400-800 nm wavelength range. The resistivity of 4.176 × 10⁻⁴ Ω cm with the grain size of 76.4891 nm was obtained in the quasi-crystal AZO thin film deposited at 300 °C, under sputtering power of 140 W.     

Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition

Transparent conducting Al-doped ZnO (AZO) thin films have been deposited by sol-gel route. Starting from an aqueous solution of zinc acetate by adding aluminum chloride as dopant, a c-axis oriented polycrystalline ZnO thin film 100 nm in thickness could be spin-coated on glass substrates via a two-step annealing process under reducing atmosphere. The effects of thermal annealing and dopant concentration on the structural, electrical and optical properties of AZO thin films were investigated. The post-treated AZO films exhibited a homogenous dense microstructure with grain sizes less than 10 nm as characterized by SEM photographs. The annealing atmosphere has prominent impact on the crystallinity of the films which will in turn influence the electrical conductivity. By varying the doping concentrations, the optical and electrical properties could be further adjusted. An optimal doping concentration of Al/Zn = 2.25 at.% was obtained with minimum resistivity of 9.90 × 10⁻³ Ω-cm whereas the carrier concentration and mobility was 1.25 × 10²⁰ cm⁻³ and 5.04 cm² V⁻¹ s⁻¹, respectively. In this case, the optical transmittance in the visible region is over 90%.