A survey of surface tension,molar volume and density for Sn–Ag–Cu–Bi–Sb quinary alloys as lead-free solders

ABSTRACT

By applying the geometric models and the theoretical equation, the surface tension, the molar volume and the density were studied. The empirical calculations were carried out in temperature range 623?K?≤?T?≤?1123?K. Only few thermophysical properties were estimated for eight quinary alloys: Sn3.55Ag0.5Cu3Bi3Sb, Sn3.48Ag0.5Cu3Bi5Sb, Sn3.48 Ag0.5Cu5Bi3Sb, Sn3.40 Ag0.5Cu5Bi5Sb, Sn3.53Ag1Cu3Bi3Sb, Sn3.46Ag1Cu3Bi5Sb, Sn3.46Ag1Cu5Bi3Sb, Sn3.38Ag1Cu5Bi5Sb. The results show that surface tension and density have a linear appearance for all temperatures. We have also studied the influence of the composition and temperature in the studied alloys. The obtained theoretical results are compared with the experimental ones and with the conventional Pb–Sn welds.     

非线性互补问题的一种全局收敛的显式光滑Newton方法

本针对Po函数非线性互补问题，给出了一种显式光滑Newton方法，该方法将光滑参数μ进行显式迭代而不依赖于Newton方向的搜索过程，并在适当的假设条件下，证明了算法的全局收敛性。     

On the Moments of Overflow and Freed Carried Traffic for the GI/M/C/0 System

In circuit-switched networks call streams are characterized by their mean and peakedness (two-moment method). The GI/M/C/0 system is used to model a single link, where the GI-stream is determined by fitting moments appropriately. For the moments of the overflow traffic of a GI/M/C/0 system there are efficient numerical algorithms available. However, for the moments of the freed carried traffic, defined as the moments of a virtual link of infinite capacity to which the process of calls accepted by the link (carried arrival process) is virtually directed and where the virtual calls get fresh exponential i.i.d. holding times, only complex numerical algorithms are available. This is the reason why the concept of the freed carried traffic is not used. The main result of this paper is a numerically stable and efficient algorithm for computing the moments of freed carried traffic, in particular an explicit formula for its peakedness. This result offers a unified handling of both overflow and carried traffics in networks. Furthermore, some refined characteristics for the overflow and freed carried streams are derived.     

Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(0 0 1), studied by LEED

We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi₄ clusters are arranged in the top Cu layer instead of MgBi₄. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.     

Germanium growth on Br-terminated Si(1 0 0)

The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．     

一阶形式系统K~*及其完备性

模糊命题演算的形式系统L＊已经在模糊逻辑与模糊推理的结合研究中得到了成功的应用.本文考虑与系统L＊相应的一阶逻辑理论,建立了一阶形式系统K＊,并证明了这个系统的完备性.