减压扩散高阻密栅技术应用研究

本文对减压扩散机理及高阻密栅技术作了详细的分析,并就设备及工艺方面的关键技术进行了阐述,最后对减压扩散高方阻工艺及密栅匹配技术电池效率进行了对比分析,有以下结论:(1)减压扩散在工艺优化后,方阻均匀性得到大幅改善,达到3;以内.(2)减压扩散电池效率完全可达到常规产线的水平,且在高阻密栅方面更有优势,可有效提升太阳电池效率.     

对流扩散方程的缩减基有限元法的后验误差

将缩减基(RB)方法和有限元方法相结合,在保证偏微分方程的有限元离散格式具有足够高精确度前提下,能够大幅度地降低有限元离散格式的维数,从而大大降低计算中内存容量和计算时间的消耗.针对对流扩散方程建立基于RB方法的Crank-Nicolson有限元离散格式,并给出后验误差估计结果.     

扩宽OMA-Ⅵ同时谱宽的新方法

OMA－Ⅵ存在同时谱宽窄的缺点，本文用一种新方法大幅度地扩宽了它的同时谱宽，且不降低其系统分辨率，应用效果甚佳。     

三维热传导型半导体器件瞬态模拟问题的Crank—Nicolson差分—流线扩散有限元法及其数值分析

本文研究三维热传导型半导体器件瞬态模拟问题的数值方法。针对数学模型中各方程不同的特点，分别提出不同的有限元格式。特别针对浓度方程组是对流为主扩散问题的特点，使用Crank-Nicolson差分-流线扩散计算格式，提高了数值解的稳定性。得到的L^2误差估计关于空间剖分步长是拟最优的，关于时间步长具有二阶精度。     

HIRFL–CSR加速器中束流与真空中剩余气体的碰撞损失

研究了重离子加速器中束流与真空中剩余气体的碰撞损失过程和碰撞截面,在依据大量实验数据的基础上,提出了一组计算离子一原子的电荷交换截面的经验公式.以兰州重离子加速器HDRFL及冷却储存环CSR为例,给出了依据碰撞截面的公式计算束流在加速器真空中的传输效率的方法,并计算了在不同真空度下HIRFL的ECR源轴向注入束运线、注入器SFC、前束运线、主加速器SSC和后束运线等不同加速阶段及CSR的传输效率,并提出合理的真空度要求.HIRFL的真空分布测量和束流的损失测量证明了该计算方法的可靠性.     

非晶调制多层膜Nb/Si中的互扩散研究

利用原位Ｘ射线衍射技术得到非晶调制多层膜Ｎｂ／Ｓｉ中的互扩散系数与退火温度的关系，调制周期Ｌ＝３.２ｎｍ的非晶调制多层膜是用粒子溅射方法制备的．温度范围为４２３—５２３Ｋ的有效互扩散系数通过原位测量多层膜的一级调制峰强度与退火温度之间的关系而得到．利用缺陷陷阱延迟扩散机制解释了所得到的扩散系数与退火温度的关系．建立了可以解释较小前置系数的模型 关键词：     

Second-order random wave solutions for interfacial internal waves in N-layer density-stratified fluid

This paper studies the random internal wave equations describing the density interface displacements and the velocity potentials of N-layer stratified fluid contained between two rigid walls at the top and bottom. The density interface displacements and the velocity potentials were solved to the second-order by an expansion approach used by Longuet-Higgins （1963） and Dean （1979） in the study of random surface waves and by Song （2004） in the study of second- order random wave solutions for internal waves in a two-layer fluid. The obtained results indicate that the first-order solutions are a linear superposition of many wave components with different amplitudes, wave numbers and frequencies, and that the amplitudes of first-order wave components with the same wave numbers and frequencies between the adjacent density interfaces are modulated by each other. They also show that the second-order solutions consist of two parts： the first one is the first-order solutions, and the second one is the solutions of the second-order asymptotic equations, which describe the second-order nonlinear modification and the second-order wave-wave interactions not only among the wave components on same density interfaces but also among the wave components between the adjacent density interfaces. Both the first-order and second-order solutions depend on the density and depth of each layer. It is also deduced that the results of the present work include those derived by Song （2004） for second-order random wave solutions for internal waves in a two-layer fluid as a particular case.     

(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

选用不同浓度的Pb(Zr_0.52Ti_0.48)O₃溶胶，用Sol-gel法在Pt/Ti/SiO₂/Si基片上沉积一层厚度不同的Pb(Zr_0.52Ti_0.48)O₃ (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr_0.52Ti_0.48)O _{关键词： PZT铁电薄膜 择优取向 过渡层 剩余极化强度}