Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

发达国家早期与当今发展中国家经济发展的跨期比较--拓展发展经济学理论视野的一种新尝试

不管是发达国家还是发展中国家,每个经济体的经济发展都要经历由传统农业社会向现代工业社会转型的经济发展过程,这是我们拓展发展经济学的理论视野。在发展经济学的分析框架中研究发达国家早期发展历程,并将其与当今发展中国家经济发展进行垮期比较研究的客观基础。这种跨期比较研究既能为发展经济学提供更丰富的经验素材,并从经济发展思想史中吸取思想营养,使其理论视野更为广阔、逻辑更为严谨,又能为当今发展中国家选择发展道路提供更为丰富具体的历史参照系和更深入的理论阐释。     

Polarized Lidar Reflectance Measurements of Vegetation at Near-Infrared and Green Wavelengths

There is growing interest in the use of lidar for remote sensing of vegetation owing to the emergence of reliable and rugged lasers and highly sensitive detectors. Lidar remote sensing has a distinct advantage over conventional techniques in vegetation remote sensing due to its capability for three-dimensional characterization of vegetative targets. The Multiwavelength Airborne Polarimetric Lidar (MAPL) system was developed primarily for vegetation remote sensing applications from an airborne platform of up to 1,000 -m altitude. The lidar system has full waveform capture and polarimetric measurement capability at two wavelengths in the near-infrared (1064 nm) and the green (532 nm) spectral regions. This study presents preliminary ground-based lidar reflectance measurements on a variety of deciduous and coniferous trees under fully foliated conditions with a view towards tree species discrimination. Variations in the reflectance characteristics of selected deciduous trees under unfoliated and fully foliated conditions were also investigated. Our study reveals distinct differences in the reflectance characteristics of various trees.     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

血液的光学性质研究

本文用辐射输运理论方法去计算红细胞的光学特征量,并在此基础上提出检测血细胞数密度的理论实验方案,其结果与传统的方法一致。本文为开发一种血球数自动检测仪提供了理论基础和仪器结构原型。     

巷道底板上锚杆布置形式对预防底鼓效果的模拟研究

本文采用三个边界元模型对巷道底板上锚杆的不同布置形式对防治底鼓的效果进行了模拟研究。根据研究结果,提出采用在巷道底板上分期安装锚杆的方法,可有效地防治巷道底鼓。本文对巷道底鼓产生机理和防治措施的研究结果,具有一定的理论价值和应用参考价值。     

Chemical Constituents of Ligusticum sinensis Oliv.

The new phenylpropanoid diglycoside ligusinenoside A ( 1 ), and the two new 8,4′‐oxyneolignan(‘8‐O‐4′‐neolignan’) diglycosides ligusinenosides B ( 2 ) and C ( 3 ), together with nine known compounds, were isolated from the rhizomes of Ligusticum sinensis Oliv. The structures of 1 – 3 were elucidated on the basis of spectroscopic analyses.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.