农机报表管理系统的设计与实现

以新疆生产建设兵团农机报表管理系统为例，介绍了基于C／S和B／S模式的农机报表管理系统的设计与实现，并对其系统开发中的关键技术等内容进行了探讨。     

介质折射率对一维三元光子晶体带隙的影响

利用光学传输矩阵法,数值模拟了一维二元、三元光子晶体的带隙结构,得出:三元光子晶体的主带隙略宽于二元光子晶体的主带隙;三元光子晶体的主带隙主要取决于最高折射率的介质和最低折射率的介质,而与居于两者之间的介质关系不大,并作出了相应的关系曲线。最后推导了三元光子晶体的色散关系。     

微量血糖仪监测新生儿血糖的临床意义

目的探讨微量血糖仪监测早产儿、新生儿危重症的血糖变化.方法对98例早产儿、新生儿危重症给予微量血糖仪监测血糖,微量血糖仪测定异常者抽静脉血糖对照,并对高血糖、低血糖者采取相应措施.结果高血糖发生率24.4%,其中早产儿10.7%,新生儿危重症34.61%,低血糖发生率13.26%,其中早产儿14.2%,新生儿危重症9.6%,人院时已静滴葡萄糖者高血糖发生率58.23%,低血糖发生率8.33%,未静滴葡萄糖者高血糖发生率19.76%,低血糖发生率15.11%,微量血糖仪测定异常者与静脉血糖测定比较无显著差异.结论微量血糖仪监测早产儿、新生儿危重症血糖可靠、实用.     

微量血糖仪监测新生儿血糖的临床意义

目的探讨微量血糖仪监测早产儿、新生儿危重症的血糖变化.方法对98例早产儿、新生儿危重症给予微量血糖仪监测血糖,微量血糖仪测定异常者抽静脉血糖对照,并对高血糖、低血糖者采取相应措施.结果高血糖发生率24.4%,其中早产儿10.7%,新生儿危重症34.61%,低血糖发生率13.26%,其中早产儿14.2%,新生儿危重症9.6%,人院时已静滴葡萄糖者高血糖发生率58.23%,低血糖发生率8.33%,未静滴葡萄糖者高血糖发生率19.76%,低血糖发生率15.11%,微量血糖仪测定异常者与静脉血糖测定比较无显著差异.结论微量血糖仪监测早产儿、新生儿危重症血糖可靠、实用.     

A Novel Analytical Approach for Multi-Layer Diaphragm-Based Optical Microelectromechanical-System Pressure Sensors

An optical microelectromechanical-system （MEMS） pressure sensor based on multi-layer circular diaphragm is described and analysed by using the proposed novel analytical approach and the traditional transfer matrix method. The analytical expressions of the deflection of multi-layer diaphragm and absolute optical reflectance are derived respectively. The influence of residual stress on the deflection of diaphragm is also analysed. Simulation results given by the finite element method are consistent with the ones which are analysed by using the analytical approach. The analytical approach will be helpful to design and fabricate the optical MEMS pressure sensors with multi-layer diaphragm based on Fabry-Perot interferometry.     

滚齿切削图形的解析求法

本文提出了求滚齿图形的解析方法,用该方法可以方便而精确地求出各种类型滚刀的切削图形,并能在计算机上直接打印出来。它既可以用来分析各种类型滚刀的切削过程,又可以作为滚刀计算机辅助设计的一个环节,以寻求更加高效和高耐用度的滚刀齿形。     

Ar—Kr溶液扩散系数的分子动力学模拟及其与温度的关系

用分子动力学模拟方法研究确定Ａｒ－Ｋｒ溶液的自扩散系数Ｄ１、Ｄ２和互扩散系数Ｄ１２以及它们随温度变化的规律。结果表明，分别用Ｇｒｅｅｎ－Ｋｕｂｏ法和Ｅｉｎｓｔｅｉｎ法得到的扩散系数在数值上一致；该溶液的３种扩散系数均满足Ｄ＝Ｄ０ｅ＾Ｅ／ＲＴ关系。     

STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

The effects of ion implantation on ployacetylene films PA have been studied with Ar~+, Fe~+, C1~+, I~+, Na~+ and K~+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.     

Tb~(3 )在MO(M=Ca,Sr)中的长余辉发光

长余辉发光材料的研究与应用,已有近100年的历史,目前仍在许多领域中有着重要应用[1].此类材料与其他光致发光材料具有相同的发光性能,只是更注重其发光的衰减过程和热释光性能.如,ZnS:Cu作为黄绿色的长余辉发光材料,在1992年以前是余辉性能最好的长余辉发光材料,一直处于发光研究工作的中心.