High-Current Multi-Finger Mesa InGaAs/InP DHBTs

Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors （DHBTs） are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

长江流域梯级水库夏末秋初蓄水对河口盐水入侵和淡水资源的影响

流域大型梯级水库群,夏末秋初蓄水,来年枯季放水,季节性改变了入海径流量,会影响河口盐水入侵和淡水资源利用.收集了长江流域大型梯级水库有效库容和南水北调工程跨流域调水的量值,利用改进的河口海岸三维数值模式ECOM-si,模拟和分析了长江流域重大工程对河口盐水入侵和淡水资源的影响.截至2020年和2035年,长江流域中上游已建和将建大型水库有效库容分别为706.11和943.88亿m3,蓄水期9、10月间平均径流量分别减少13 398和17 909 m3/s.基于大通实测水文站1950—2020年实测月平均径流量,考虑截至2020年和2035年流域重大工程对径流量的调节,给出了平均水文年和特枯水文年8—10月的月平均径流量.数值模拟结果表明,截至2020年和2035年流域梯级水库9—10月蓄水,径流量下降,导致盐水入侵加剧.在平均水文年,南支水源地4个水库9—10月所有时间均能取到淡水.在特枯水文年, 9—10月东风西沙、太仓、陈行和青草沙水库取水口连续不宜取水天数截至2020年分别为28.75、24.99、29.63和37.47 d,到2035年分别为46.53、44.18、47.56和...     

Physical modeling of direct current and radio frequency characteristics for In P-based InAlAs/InGaAs HEMTs

Direct current(DC) and radio frequency(RF) performances of InP-based high electron mobility transistors(HEMTs)are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f_(max)) of 385 GHz.     

前瞻晶体硅太阳能电池未来产业化——高效N型背结前接触和背结背接触晶体硅太阳能电池

文章综述了N型背结背接触和背结前接触晶体硅太阳能电池的研究和产业化的最新进展.从原理上阐述了N型背结背接触电池高效率的原因.从研究的角度,综述和点评了国际上几个研究小组在N型背结前接触晶体硅电池方面的研究工作.论述了丝网印刷Al烧结法制备N型背结背接触电池方面的研究进展.     

The design and manufacture of a notch structure for a planar InP Gunn diode

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode;the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing(10 μm-20 μm) and diameter(40 μm-60 μm) of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.     

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.     

Extrinsic Base Surface Passivation in High Speed ＂Type-II＂ GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.