Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.     

High temperature superconducting thin films for microwave filters

YBa₂Cu₃O_7-δ and Tl₂Ba₂CaCu₂O₈ thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.     

高温超导滤波器研制

设计并制作了中心频率为2 007.5MH z,带宽为15MH z的6阶T l2B a2C aCu2O8高温超导微带滤波器.采用在谐振器之间插入微带条来微调耦合间距的办法,提高了设计的精确度.实测结果表明滤波器的最小插入损耗为0.25 dB,带外抑制约60 dB,带内波纹为0.16 dB,中心频率、带宽以及边带陡峭度等都与仿真结果吻合较好,验证了设计与制作的一致性.     

Tl系超导薄膜金属涂层的生长与特性研究

我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2.     

超导滤波器专用设计软件

开发了一套适用于高温超导滤波器设计的专用软件。利用该软件可快速得出高达20阶的任意结构的任意类型滤波器的传输方程、原型电路,并提取出其耦合系数矩阵。该软件可分析寄生耦合、基片厚度,介电常数误差等对滤波器的性能影响,并能由蒙特卡罗(Monte Carlo)法预测超导滤波器的产品合格率。此外,该软件提供了一个基于神经网络模型的计算机辅助调谐工具包。因而可解决超导滤波器设计、调谐的几乎所有问题,大大降低了其研制的难度和产业化的门槛。     

T1—2212超导薄膜的制备

以铝酸镧晶体为基片，采用两步法制备T1-2212超导薄膜，包括在低温(150℃)下利用激光脉冲沉积(PLD)工艺沉淀Ba2CaCu2Ox非晶前驱体薄膜和在高温(740～830℃)下前驱体薄膜的铊化结晶、取向生长过程，实验结果表明所制得的膜的相组成为T1-2212，表面存在大量均匀分布的成分为T12Ba2CaCu2Ox的亚微米颗粒，其零电阻温度为101K，薄膜与基片之间界面清晰，没有过渡层，薄膜具有良好的c取向外延条纹。     

S波段低温低噪声放大器的研制

介绍了基于ADS仿真的低噪声放大器的设计与制作方法;重点研究了LNA的直流偏置、稳定性分析、匹配设计、版图制作和调试;提出了源级负反馈和栅极加并联阻抗的方法来实现了电路全频段稳定和低温正常工作。采用ATF-34143制作了中心频率在2.25的低噪声放大器,在77K温度下,该放大器带内输入输出驻波比小于1.2,增益达到23dB,噪声系数为0.24dB。     

Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate

The double-side Tl2Ba2 CaCu2O8 （Tl-2212） superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Ti-2212 thin films on CeO2 buffered sapphire substrates were fabricated by adc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the e-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106K, the critical current density Jc is around 3.5 MA/cm^2 at 77K, and the microwave surface resistance R8 at 77K and 10 CHz of the film is as low as 390μ Ω.     

热噪声对约瑟夫森结I-V特性及微波感应台阶的影响研究

采用数值仿真的方法研究了热噪声对约瑟夫森结I-V特性及微波感应台阶的影响。研究表明,热噪声导致约瑟夫森结的I-V特性曲线呈现"圆拱化",也使得微波感应台阶高度减小。得出了取不同约瑟夫森结临界电流和结电阻时,热噪声对台阶的影响规律     

LED分组密码内部模板攻击改进研究

为了降低现有内部模板攻击的数据复杂度并提高攻击成功率,提出了一种内部模板攻击改进算法.对内部模板攻击算法进行了两点改进:一是在模板匹配分析阶段,提出了一种基于等级相关性的模板匹配策略,利用功耗曲线电压值的相对排名,提高了单个密钥片段恢复的局部成功率;二是在密钥恢复阶段,提出了一种基于校验方程的密钥恢复方法,利用冗余信息来修正猜测多个密钥片段的概率分布,提高了多密钥片段恢复的全局成功率.以8位微控制器上的LED(轻型加密设备)密码功耗旁路分析为例,开展了攻击验证实验.结果表明:改进后的算法提高了匹配的区分度,降低了攻击所需功耗曲线数量,仅需要50条功耗曲线即可使攻击的全局成功概率接近100%.