大学生博客的引导与规范

大学生博客是博客的重要组成部分。大学生博客作为新生的网络文化现象,给大学生的学习和生活带来了各种影响。这一现象对互联网时代的大学生思想政治教育工作提出了新的挑战,如何正确引导和规范大学生博客也已经成为高等教育工作者的一个重要课题。     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface

A metal-graphene hybrid metasurface polarization converter is designed in this Letter.The unit cell of the hybrid metasurface is composed of a butterfly-shaped structure whose branches are connected by multi-layer graphene sheets.The proposed device can be reconfigured from linear-to-circular polarization to cross-polarization by changing the Fermi energy of graphene.The simulation results show that for three-layer graphene,the device acts as a linear-to-circular polarization converter when EF=0 eV and switches to a cross-polarization converter when EF=0.5 eV.Compared with single-layer graphene,the device with three-layer graphene can maintain the cross-polarization conversion performance under low Fermi energy.Furthermore,two equivalent circuits in the x and y directions are developed to understand the working mechanism of the device.     

常规公交组合调度优化研究

为满足公交企业管理运营和乘客二者共同的利益需求,达到资源合理配置,结合现场调查数据,借助Matlab进行公交OD客流量的反推计算,同时在确定大站快车开行的站点的基础上,分别得到大站快车和全程车调度的OD客流量,然后建立包含大站快车和全程车两种调度形式的发车间隔优化模型. 以北京某公交线路作为研究对象,选取平均运行速度、开行班次、停车次数、公交运营成本等指标进行敏感性分析. 结果表明,模型在满足乘客的需求的同时,降低了公交企业约25%的运营成本.     

Improving breakdown voltage performance of SOI power device with folded drift region

A novel silicon-on-insulator(SOI) high breakdown voltage(BV) power device with interlaced dielectric trenches(IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer,which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges(holes) at the corner of IDT.The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

小波变换的单开关电流积分器设计实现方法

针对小波变换的模拟电路实现问题,提出一种基于单开关电流积分器的模拟小波变换电路设计新方法。根据小波变换的模拟滤波器实现原理,以某一带通滤波器传递函数为例,首先,基于小波函数的容许条件,证明该网络函数为母小波函数;然后,采用单开关电流积分器为基本单元设计冲激响应为该母小波的带通滤波器,通过调节滤波器电路时钟频率获得不同尺度小波函数实现小波变换。研究结果表明:该方法实现小波变换具有无需小波函数逼近过程、设计精度高、电路结构简单、小波函数尺度易于调节等特点,适合于低压、低功耗和实时工程应用。     

深圳市宝安区儿童头发中微量元素含量与儿童眼病关系的研究

通过对2001～2003年深圳市宝安区独生子女(0～14岁)近20000例体检情况统计，结合测定头发中微量元素锌、铁、铜、钙、锰、硒六种元素含量，对照健康人微量元素测定，发现缺锌、缺铜、缺硒儿童较健康儿童更易患近视，这一结论与相关报道一致。     

医学论文题名的撰写

强调论文题名的重要性,从论文构成中分析如何确定题名,列举了科研论文中常见的一些问题,并归纳了撰写文题的要点。     

三相位交叉口通行能力计算方法

基于停车线法,分别针对其右转车道、无左转专用相位时左转车道和直行车道的通行能力计算方法进行改进,由此提出计算三相位交叉口通行能力的改进模型. 以实际交叉口为例,利用实测数据,分别运用停车线法及改进模型计算其通行能力. 结果表明,改进模型可以有效地改善停车线法计算三相位交叉口通行能力的不足,计算结果更接近实测数据,且不受实际调查数据的影响.