铌酸锂的光致发光研究进展

铌酸锂（LiNbO3）优良的电光、声光、压电、铁电和非线性光学特性可用于制备性能优良的频率转换器、固体激光器等，更为重要的是与光发射性能相结合可能成为实现硅基光电子集成技术的重要途径之一．本文介绍了LiNbO3掺杂过渡金属元素、稀土元素和LiNbO3多层结构薄膜的光致发光机理及影响因素，指出了目前LiNbO3光致发光存在的问题，并对其发光性能的应用前景进行了展望．     

冷变形和时效温度对扭振时恒弹性合金f_s-T曲线的影响

本文探讨Fe-Ni-Cr-Ti合金在冷变形和时效状态中两种振动模式(扭振和横振)中的f(共振频率)-T(温度)曲线,以及冷变形压下量和时效温度对扭振模式中f_s(扭振共振频率)-T曲线的影响,指出:在冷变形状态的两种振动模式中,其f-T曲线相似但不重合;时效状态时扭振模式中的f_s-T曲线极大值与横振模式中的f_l(横振共振频率)-T曲线极小值所对应的温度移至室温附近,同一材料,随着时效温度升高,在扭振模式下其频率温度系数由正变负,在横振模式下由负变正,扭振模式下,随着冷变形压下量增加或时效温度降低,f_s-T曲线极大值移向高温,可通过调整冷变形压下量和时效温度以控制极大值对应温度,获得较低的频率温度系数值。     

天津市环境类科技期刊出版资源的调查与优化

调查了天津市与环境科学有关的科技期刊出版资源,包括:专业类期刊中的环境期刊,综合类期刊的环境栏目,并深入分析了目前科技期刊发展中存在的问题。最后,针对这些问题,从科技期刊出版体制改革和增进学术交流的角度,提出优化学术出版资源的一些建议,以期促进天津市的环境科学研究。     

GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×10⁸cm^-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH₄/H₂, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.     

GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×10⁸cm^-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH₄/H₂, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.     

新型低碳Cr-Mo系合金钢淬火态的金相组织研究

对新型低碳Cr-Mo系合金钢轧态试样采用不同淬火工艺进行热处理,并利用金相显微镜、扫描电子显微镜研究了淬火工艺对试验钢显微组织的影响规律.结果表明:随淬火加热温度的升高以及保温时间的延长,金相组织发生粗化.最佳的淬火工艺为:加热到920 ℃保温30 min后水淬,得到的组织为低碳马氏体,且均匀、细小,晶粒度达到8.5级以上,可获得的优异强韧性.     

基于发光机理提高掺铒硅基材料发光效率的几条途径

掺铒硅基发光材料可以用于制备光通信用光源、光纤放大器，更重要的是可能成为实现硅基光电子集成技术的重要途径，已成为研究的热点之一．文章讨论了掺铒硅及掺铒硅基材料的发光机理，指出了制约实用化方面存在的问题．从不同方面着重探讨了共掺氧对提高掺铒硅发光效率的作用．最后介绍了基于掺铒硅发光机理提高掺铒硅基材料发光效率的几种途径、目前存在的主要问题及研究进展．     

Fe掺杂In2O3薄膜的微结构与磁、输运性能

采用磁控溅射方法制备Fe掺杂In2O3基稀磁半导体(DMS)薄膜.通过XRD、XPS和XANES分析,确定Fe掺杂In2O3薄膜中没有出现Fe团簇以及Fe的氧化物第二相,Fe元素是以Fe2+和Fe3+的形式共同存在.通过输运特性ρ-T和HALL分析确定Fe掺杂In2O3薄膜的载流子浓度约4×1018cm-3,且Fe的掺杂并未改变In2O3的半导体属性.SQUID磁性测试显示Fe掺杂In2O3样品具有明显的室温铁磁性,铁磁性可以由束缚磁极子模型或双交换机制来解释.     

射频磁控溅射制备c轴取向LiNbO3薄膜研究

采用射频磁控溅射技术,用富Li的LiNbO3靶材在Si(100)和Si(111)基底上制备了LiNbO3薄膜.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)对LiNbO3薄膜的结晶程度、晶体取向和表面形貌及薄膜与基底结合处的界面结构进行了研究.结果表明:样品在空气中经1 000℃退火1 h处理后,薄膜与Si基底界面处有SiO2生成,得到的LiNbO3薄膜结晶性好,具有高c轴取向,晶粒排列致密且粒径尺寸均匀.     

Color-converted remote phosphor prototype of multiwavelength excitable borosilicate glass for white light-emitting diodes

We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited by from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit desired red light with an excellent transmission in the wavelength range of 400-700 nm which makes this glass suitable for the color conversion without great cost of luminous power loss. In particular, assembling this glass to commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic "remote-phosphor" color conversion.